Dr. Jörg Butschke Profile

Dr. Jörg Butschke

at IMS CHIPS

SPIE Involvement:

Author

Publications (53)

Proceedings Article | 13 May 2016 Presentation + Paper

Echelle grating for silicon photonics applications: integration of electron beam lithography in the process flow and first results

Mathias Kaschel, Florian Letzkus, Jörg Butschke, Piotr Skwierawski, Marc Schneider, Marc Weber

Proceedings Volume 9891, 98911V (2016) https://doi.org/10.1117/12.2228817

KEYWORDS: Modulators, Waveguides, Multiplexers, Optical design

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Proceedings Article | 19 March 2015 Paper

Fabrication of NIL templates and diffractive optical elements using the new Vistec SB4050 VSB e-beam writer

Joerg Butschke, Mathias Irmscher, Corinna Koepernik, Stephan Martens, Holger Sailer, Bernd Schnabel

Proceedings Volume 9423, 94231A (2015) https://doi.org/10.1117/12.2086610

KEYWORDS: Nanoimprint lithography, Diffractive optical elements, Silicon, Semiconducting wafers, Vestigial sideband modulation, Quartz, Electron beam lithography, Photomasks, Holograms, Etching

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Proceedings Article | 9 September 2013 Paper

E-beam GIDC resolution enhancement technology in practical applications

S. Martens, J. Butschke, R. Galler, M. Krüger, H. Sailer, M. Sülzle

Proceedings Volume 8880, 88802H (2013) https://doi.org/10.1117/12.2030822

KEYWORDS: Semiconducting wafers, Photomasks, Line width roughness, Point spread functions, Etching, Silicon, Cadmium sulfide, Resolution enhancement technologies, Chemically amplified resists, Resistance

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For nearly all relevant applications of e-beam lithography the resolution and pattern quality requirements are approaching or exceeding the limits of the available process. On one hand, for shrinking feature dimensions, the e-beam proximity effect and process effects such as photo acid diffusion limit the pattern contrast and process window. On the other hand, e-beam process related parasitic effects such as shot noise, fogging, developer loading, heating, charging, and inhomogeneous bake introduce some significant errors. Even though e-beam tool and process tool suppliers continue to implement new or improve current strategies to avoid or correct these effects, the amount of residual errors requires some reasonable e-beam process window, in particular for high end applications. For some patterns the undersize-overdose approach (SIZE) improves the pattern fidelity and process window. However, for patterns with high fill factors this approach increases the overall deposited electron dose, which due to the increased backscattering diminishes or even eliminates the advantages. The geometrically induced dose correction (GIDC) method overcomes this issue by combining the SIZE concept with a short range framing technique, which reduces the deposited dose in large filled pattern areas. This paper provides a comparison of the standard, SIZE, and GIDC correction approaches for 1D test patterns as well as production patterns. For a broad comparison, patterns were printed onto negative and positive chemically amplified resists and on wafer and mask substrates using a Vistec SB352HR variable shape e-beam writer. Both wafers were also etched. The outcome of the study is that the SIZE and GIDC approaches often outperform the standard proximity effect correction. For dense patterns, GIDC still provides a better pattern quality and process window, while the SIZE approach suffers from the increased overall deposited electron dose and clearly falls behind GIDC in terms of process window. Further it was shown that the lowering of the dose in inner areas due to GIDC does not impact the etch resistance.

Proceedings Article | 14 October 2011 Paper

Si stencil masks for organic thin film transistor fabrication

Florian Letzkus, Tarek Zaki, Frederik Ante, Harald Richter, Joachim Burghartz, Jörg Butschke, Hagen Klauck

Proceedings Volume 8166, 81662B (2011) https://doi.org/10.1117/12.899168

KEYWORDS: Photomasks, Silicon, Etching, Gold, Metals, Electron beam lithography, Semiconducting wafers, Scanning electron microscopy, Aluminum, Transistors

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Proceedings Article | 23 September 2009 Paper

Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write

Elmar Platzgummer, Christof Klein, Peter Joechl, Hans Loeschner, Martin Witt, Wolfgang Pilz, Joerg Butschke, Michael Jurisch, Florian Letzkus, Holger Sailer, Mathias Irmscher

Proceedings Volume 7488, 74881D (2009) https://doi.org/10.1117/12.832156

KEYWORDS: Photomasks, Ions, Semiconducting wafers, Lithography, Nanofabrication, Silicon, Particles, Electronics, Nanostructures, Electron beams

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Proceedings Article | 23 September 2009 Paper

Latest results and computing performance of the ePLACE data preparation tool

J. Gramss, R. Galler, V. Neick, A. Stoeckel, U. Weidenmueller, D. Melzer, M. Suelzle, J. Butschke, U. Baetz

Proceedings Volume 7488, 748827 (2009) https://doi.org/10.1117/12.835880

KEYWORDS: Photomasks, Beam shaping, Data conversion, Magnesium, Electron beam lithography, Data processing, Visualization, Standards development, Lithography, Computer architecture

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Proceedings Article | 11 May 2009 Paper

Inspection and repair for imprint lithography at 32 nm and below

Kosta Selinidis, Ecron Thompson, S. Sreenivasan, Douglas Resnick, Marcus Pritschow, Joerg Butschke, Mathias Irmscher, Holger Sailer, Harald Dobberstein

Proceedings Volume 7379, 73790N (2009) https://doi.org/10.1117/12.824264

KEYWORDS: Photomasks, Inspection, Metals, Defect detection, Lithography, Semiconducting wafers, Scanning electron microscopy, Ultraviolet radiation, Electron beams, Image segmentation

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Proceedings Article | 11 May 2009 Paper

Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system

Joerg Butschke, Mathias Irmscher, Holger Sailer, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7379, 73792O (2009) https://doi.org/10.1117/12.824338

KEYWORDS: Photomasks, Line edge roughness, Critical dimension metrology, Line width roughness, Optical lithography, Etching, Nanofabrication, Electrons, Ions, Silver

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Proceedings Article | 18 March 2009 Paper

PML2: the maskless multibeam solution for the 22nm node and beyond

C. Klein, E. Platzgummer, J. Klikovits, W. Piller, H. Loeschner, T. Bejdak, P. Dolezel, V. Kolarik, W. Klingler, F. Letzkus, J. Butschke, M. Irmscher, M. Witt, W. Pilz, P. Jaschinsky, F. Thrum, C. Hohle, J. Kretz, J. Nogatch, A. Zepka

Proceedings Volume 7271, 72710N (2009) https://doi.org/10.1117/12.813670

KEYWORDS: Semiconducting wafers, Lithography, Electron beams, Electrodes, Prototyping, Electron beam lithography, Electron beam direct write lithography, Silicon, Optical alignment, Photomasks

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Proceedings Article | 18 March 2009 Paper

Evaluation of the CD-SEM Vistec LWM90xx for line-width measurement of nanoimprint templates

Marcus Pritschow, Joerg Butschke, Mathias Irmscher, Lidia Parisoli, Toshihide Oba, Toshimichi Iwai, Takayuki Nakamura

Proceedings Volume 7271, 72711U (2009) https://doi.org/10.1117/12.814161

KEYWORDS: Quartz, Scanning electron microscopy, Photomasks, Contamination, Process control, Optical lithography, Nanoimprint lithography, Etching, Control systems, Metrology

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Proceedings Article | 20 October 2008 Paper

Mask patterning for the 22nm node using a proton multi-beam projection pattern generator

Joerg Butschke, Mathias Irmscher, Holger Sailer, Lorenz Nedelmann, Marcus Pritschow, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7122, 712236 (2008) https://doi.org/10.1117/12.801402

KEYWORDS: Etching, Electron beam lithography, Line edge roughness, Photoresist processing, Electron beams, Ion beams, Photomasks, Line width roughness, Ions, Nanofabrication

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Proceedings Article | 20 October 2008 Paper

Deflection unit for multi-beam mask making

Florian Letzkus, Joerg Butschke, Mathias Irmscher, Michael Jurisch, Wolfram Klingler, Elmar Platzgummer, Christof Klein, Hans Loeschner, Reinhard Springer

Proceedings Volume 7122, 712235 (2008) https://doi.org/10.1117/12.801401

KEYWORDS: Etching, Silicon, Electrodes, Semiconducting wafers, Lithography, Aluminum, Mask making, Optical alignment, Switching, Line edge roughness

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Two main challenges of future mask making are the decreasing throughput of the pattern generators and the insufficient line edge roughness of the resist structures. The increasing design complexity with smaller feature sizes combined with additional pattern elements of the Optical Proximity Correction generates huge data volumes which reduce correspondingly the throughput of conventional single e-beam pattern generators. On the other hand the achievable line edge roughness when using sensitive chemically amplified resists does not fulfill the future requirements. The application of less sensitive resists may provide an improved roughness, however on account of throughput, as well. To overcome this challenge a proton multi-beam pattern generator is developed [1]. Starting with a highly parallel broad beam, an aperture-plate is used to generate thousands of separate spot beams. These beams pass through a blanking-plate unit, based on a CMOS device for de-multiplexing the writing data and equipped with electrodes placed around the apertures switching the beams "on" or "off", dependent on the desired pattern. The beam array is demagnified by a 200x reduction optics and the exposure of the entire substrate is done by a continuous moving stage. One major challenge is the fabrication of the required high aspect deflection electrodes and their connection to the CMOS device. One approach is to combine a post-processed CMOS chip with a MEMS component containing the deflection electrodes and to realize the electrical connection of both by vertical integration techniques. For the evaluation and assessment of this considered scheme and fabrication technique, a proof-of-concept deflection unit has been realized and tested. Our design is based on the generation of the deflection electrodes in a silicon membrane by etching trenches and oxide filling afterwards. In a 5mm x 5mm area 43,000 apertures with the corresponding electrodes have been structured and wired individually or in groups with aluminum lines. The aperture-plate for shaping the beams has been aligned and mounted on top of the blanking-plate. Afterwards this sandwich has been fixed on a base-plate with a pin plug as interface. The electrical connection has been performed with a standard chip bonding process to the aluminum pads on the blanking-plate. Finally, the proof-of-concept deflection unit was evaluated in a test bench. The results of electrical- and exposure tests are presented and discussed in detail.

Proceedings Article | 17 October 2008 Paper

Evaluation of e-beam repair for nanoimprint templates

Marcus Pritschow, Volker Boegli, Joerg Butschke, Mathias Irmscher, Douglas Resnick, Holger Sailer, Kosta Selinidis, Ecron Thompson

Proceedings Volume 7122, 71222L (2008) https://doi.org/10.1117/12.801946

KEYWORDS: Etching, Quartz, Photomasks, Nanoimprint lithography, Opacity, Inspection, Ultraviolet radiation, Scanning electron microscopy, Phase shifts, Silicon

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Proceedings Article | 28 March 2008 Paper

MAGIC: a European program to push the insertion of maskless lithography

L. Pain, B. Icard, S. Tedesco, B. Kampherbeek, G. Gross, C. Klein, H. Loeschner, E. Platzgummer, R. Morgan, S. Manakli, J. Kretz, C. Holhe, K.-H. Choi, F. Thrum, E. Kassel, W. Pilz, K. Keil, J. Butschke, M. Irmscher, F. Letzkus, P. Hudek, A. Paraskevopoulos, P. Ramm, J. Weber

Proceedings Volume 6921, 69211S (2008) https://doi.org/10.1117/12.772472

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Manufacturing, Electron beams, Electron beam lithography, Nanofabrication, Computed tomography, Prototyping, Maskless lithography

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Proceedings Article | 26 March 2008 Paper

High resolution nanoimprint templates for dual damascene: fabrication and imprint results

Mathias Irmscher, Joerg Butschke, Ron Carpio, Brook Chao, Wei-Lun Jen, Corinna Koepernik, Lorenz Nedelmann, Jordan Owens, Frank Palmieri, Marcus Pritschow, Christian Reuter, Holger Sailer, Ken Satoodeh, Jeff Wetzel, Bruce Wilks, Grant Willson

Proceedings Volume 6921, 69210D (2008) https://doi.org/10.1117/12.772295

KEYWORDS: Etching, Chromium, Quartz, Manufacturing, Metals, Ultraviolet radiation, Photomasks, Optical lithography, Nanoimprint lithography, Lithography

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Proceedings Article | 20 March 2008 Paper

Projection maskless lithography (PML2): proof-of-concept setup and first experimental results

C. Klein, E. Platzgummer, H. Loeschner, G. Gross, P. Dolezel, M. Tmej, V. Kolarik, W. Klingler, F. Letzkus, J. Butschke, M. Irmscher, M. Witt, W. Pilz

Proceedings Volume 6921, 69211O (2008) https://doi.org/10.1117/12.772726

KEYWORDS: Semiconducting wafers, Lithography, Electron beams, Silicon, Electrodes, Polymethylmethacrylate, Maskless lithography, Electron beam lithography, Wafer-level optics, Nanofabrication

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Proceedings Article | 1 November 2007 Paper

Resistless mask structuring using an ion multi-beam projection pattern generator

Joerg Butschke, Mathias Irmscher, Florian Letzkus, Hans Loeschner, Lorenz Nedelmann, Elmar Platzgummer

Proceedings Volume 6730, 673047 (2007) https://doi.org/10.1117/12.742797

KEYWORDS: Photomasks, Etching, Ions, Photoresist processing, Optical lithography, Electron beam lithography, Ion beams, Line edge roughness, Chemically amplified resists, Nanofabrication

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Proceedings Article | 30 October 2007 Paper

Fabrication of nano-imprint templates for dual-Damascene applications using a high resolution variable shape E-beam writer

Marcus Pritschow, Joerg Butschke, Mathias Irmscher, Holger Sailer, Douglas Resnick, Ecron Thompson

Proceedings Volume 6730, 67300G (2007) https://doi.org/10.1117/12.742498

KEYWORDS: Overlay metrology, Quartz, Electron beam lithography, Etching, Metals, Chromium, Nanolithography, Vestigial sideband modulation, Scanning electron microscopy, Chemically amplified resists

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Proceedings Article | 14 May 2007 Paper

Three-dimensional template fabrication process for the dual damascene NIL approach

Joerg Butschke, Mathias Irmscher, Douglas Resnick, Holger Sailer, Ecron Thompson

Proceedings Volume 6607, 66070U (2007) https://doi.org/10.1117/12.728944

KEYWORDS: Etching, Photomasks, Quartz, Nanoimprint lithography, Photoresist processing, Electron beam lithography, Lithography, Printing, Chromium, Scanning electron microscopy

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Proceedings Article | 20 October 2006 Paper

Manufacturing of the first EUV full-field scanner mask

Uwe Dersch, Rico Buettner, Christian Chovino, Steffen Franz, Torben Heins, Holger Herguth, Jan Hendrik Peters, Thomas Rode, Florian Letzkus, Joerg Butschke, Mathias Irmscher

Proceedings Volume 6349, 63492G (2006) https://doi.org/10.1117/12.686035

KEYWORDS: Etching, Extreme ultraviolet, Photomasks, Reflectivity, Manufacturing, Extreme ultraviolet lithography, Scanners, Optical lithography, Photoresist processing, Chromium

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Proceedings Article | 23 March 2006 Paper

NIL template manufacturing using a variable shaped e-beam writer and a new pCAR

Mathias Irmscher, Joerg Butschke, Guenter Hess, Corinna Koepernik, Florian Letzkus, Markus Renno, Holger Sailer, Hubert Schulz, Anatol Schwersenz, Ecron Thompson

Proceedings Volume 6151, 615115 (2006) https://doi.org/10.1117/12.656108

KEYWORDS: Etching, Quartz, Nanoimprint lithography, Photoresist processing, Photomasks, Chromium, Manufacturing, Electron beam lithography, Chemically amplified resists, Beam shaping

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Proceedings Article | 22 March 2006 Paper

EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers

Holger Seitz, Markus Renno, Thomas Leutbecher, Nathalie Olschewski, Torsten Reichardt, Ronny Walter, Helmut Popp, Günter Hess, Florian Letzkus, Jörg Butschke, Mathias Irmscher

Proceedings Volume 6151, 615109 (2006) https://doi.org/10.1117/12.655540

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Etching, Extreme ultraviolet, Multilayers, Dry etching, Polishing, Manufacturing, Reflectivity, Coating

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Proceedings Article | 8 November 2005 Paper

Determination of mask layer stress by placement metrology

Jörg Butschke, Ute Buttgereit, Eric Cotte, Günter Hess, Mathias Irmscher, Holger Seitz

Proceedings Volume 5992, 59923U (2005) https://doi.org/10.1117/12.631526

KEYWORDS: Photomasks, Tantalum, Metrology, Optical lithography, Chromium, Interferometers, Image registration, Quartz, Finite element methods, Lithography

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Proceedings Article | 8 November 2005 Paper

Template manufacturing for nanoimprint lithography using existing infrastructure

Mathias Irmscher, Joerg Butschke, Guenter Hess, Florian Letzkus, Markus Renno, Holger Sailer, Hubert Schulz, Anatol Schwersenz, Ecron Thompson, Boris Vratzov

Proceedings Volume 5992, 59922E (2005) https://doi.org/10.1117/12.629974

KEYWORDS: Etching, Quartz, Manufacturing, Nanoimprint lithography, Photomasks, Photoresist processing, Electron beam lithography, Chromium, Chemically amplified resists, Printing

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Proceedings Article | 8 November 2005 Paper

EUVL mask manufacturing: technologies and results

Florian Letzkus, Joerg Butschke, Mathias Irmscher, Holger Sailer, Uwe Dersch, Christian Holfeld

Proceedings Volume 5992, 59922A (2005) https://doi.org/10.1117/12.628957

KEYWORDS: Etching, Extreme ultraviolet lithography, Wet etching, Photomasks, Dry etching, Chromium, Electron beam lithography, Scanning electron microscopy, Silicon, Manufacturing

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Proceedings Article | 28 June 2005 Paper

Patterning of Ta/SiO2 high transmission EAPSM material for 193nm technology

Corinna Koepernik, H. Becker, J. Butschke, U. Buttgereit, M. Irmscher, L. Nedelmann, F. Schmidt, S. Teuber

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617110

KEYWORDS: Etching, Tantalum, Chromium, Reactive ion etching, Optical lithography, Phase shifts, Dry etching, Diffractive optical elements, Oxygen, Photomasks

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Proceedings Article | 10 May 2005 Paper

Impact of EUV mask pattern profile shape on CD measured by CD-SEM

Uwe Dersch, Arnd Korn, Cornelia Engelmann, Carl Frase, Wolfgang Haessler-Grohne, Harald Bosse, Florian Letzkus, Joerg Butschke

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598644

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Monte Carlo methods, Extreme ultraviolet, Photomasks, Detection and tracking algorithms, Silicon, Electron beams, Extreme ultraviolet lithography, Signal detection

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Proceedings Article | 6 May 2005 Paper

Comparison of EUV mask architectures by process window analysis

Siegfried Schwarzl, Frank-Michael Kamm, Stefan Hirscher, Klaus Lowack, Wolf-Dieter Domke, Markus Bender, Stefan Wurm, Adam Pawloski, Bruno La Fontaine, Christian Holfeld, Uwe Dersch, Florian Letzkus, Joerg Butschke

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599343

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Multilayers, Printing, Scanning electron microscopy, Cadmium, Extreme ultraviolet lithography, Binary data, Imaging systems

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Proceedings Article | 6 December 2004 Paper

Patterning performance of most recent e-beam-sensitive CARs for advanced mask making: an update

Anatol Schwersenz, Joerg Butschke, Axel Feicke, Mathias Irmscher, Peter Voehringer

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568819

KEYWORDS: Line edge roughness, Etching, Mask making, Electron beam lithography, Critical dimension metrology, Coating, Photoresist processing, Chemically amplified resists, Scanning electron microscopy, Temperature metrology

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Proceedings Article | 6 December 2004 Paper

SiO2 buffer-etch processes with a TaN absorber for EUV mask fabrication

Florian Letzkus, Joerg Butschke, Corinna Koepernik, Christian Holfeld, Josef Mathuni, Lutz Aschke, Frank Sobel

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569265

KEYWORDS: Etching, Photomasks, Silicon, Dry etching, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Extreme ultraviolet lithography, Chemistry, Mask making

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Proceedings Article | 6 December 2004 Paper

Comparative study of mask architectures for EUV lithography

Adam Pawloski, Bruno La Fontaine, Harry Levinson, Stefan Hirscher, Siegfried Schwarzl, Klaus Lowack, Frank-Michael Kamm, Markus Bender, Wolf-Dieter Domke, Christian Holfeld, Uwe Dersch, Patrick Naulleau, Florian Letzkus, Joerg Butschke

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569289

KEYWORDS: Photomasks, Multilayers, Extreme ultraviolet lithography, Semiconducting wafers, Extreme ultraviolet, Reflectors, Cadmium, Critical dimension metrology, Photoresist materials, Scanning electron microscopy

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Proceedings Article | 6 December 2004 Paper

Absorber stack optimization toward EUV lithography mask blank pilot production

Frank Sobel, Lutz Aschke, Markus Renno, Holger Seitz, Hans Becker, Nathalie Olschewski, Torsten Reichardt, Guenter Hess, Ute Buttgereit, Konrad Knapp, Florian Letzkus, Joerg Butschke, Corinna Koepernik

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568787

KEYWORDS: Coating, Reflectivity, Etching, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Dry etching, Inspection, Manufacturing, Multilayers

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Proceedings Article | 20 August 2004 Paper

Alternating aperture phase shift mask process using e-beam lithography for the second level

Corinna Koepernik, Joerg Butschke, Dirk Beyer, Mathias Irmscher, Bernd Leibold, Emmanuel Rausa, Rainer Plontke, Jason Plumhoff, Peter Voehringer

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557719

KEYWORDS: Overlay metrology, Photomasks, Etching, Electron beam lithography, Quartz, Scanning electron microscopy, Phase shifts, Lithography, Thin film coatings, Microsystems

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Proceedings Article | 20 August 2004 Paper

Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Peter Hudek, Corinna Koepernik, Jason Plumhoff, Emmanuel Rausa, Mitsuru Sato, Peter Voehringer

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557686

KEYWORDS: Etching, Opacity, Photoresist processing, Chromium, Scattering, Electron beam lithography, Photomasks, Optical lithography, Calibration, Chemically amplified resists

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Proceedings Article | 2 June 2004 Paper

Optimized processes and absorber-stack materials for EUV masks

Josef Mathuni, Jenspeter Rau, Frank-Michael Kamm, Guenther Ruhl, Ch. Holfeld, Florian Letzkus, C. Koepernik, Joerg Butschke

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568010

KEYWORDS: Etching, Photomasks, Extreme ultraviolet, Chromium, Tantalum, Critical dimension metrology, Materials processing, Extreme ultraviolet lithography, Reflectivity, Semiconducting wafers

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Proceedings Article | 2 June 2004 Paper

Avoidance/reduction of charging effects in case of partially insufficient substrate conductivity when using ESPACER 300Z

Rainer Plontke, Lutz Bettin, Dirk Beyer, Joerg Butschke, Mathias Irmscher, Corinna Koepernik, Bernd Leibold, Armelle Vix, Peter Voehringer

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568033

KEYWORDS: Quartz, Chromium, Thin film coatings, Electron beam lithography, Photomasks, Distortion, Optical inspection, Overlay metrology, Metrology, Resistance

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Proceedings Article | 17 December 2003 Paper

Second-level imaging of advanced alternating phase-shift masks using e-beam lithography

Bernd Leibold, Joerg Butschke, Lutz Bettin, Dirk Beyer, Mathias Irmscher, Corinna Koepernik, Rainer Plontke, Armelle Vix, Peter Voehringer

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518037

KEYWORDS: Quartz, Electron beam lithography, Photomasks, Distortion, Thin film coatings, Overlay metrology, Etching, Phase shifts, Coating, Chemically amplified resists

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Proceedings Article | 17 December 2003 Paper

90-nm mask making processes using the positive tone chemically amplified resist FEP171

Joerg Butschke, Dirk Beyer, Chris Constantine, Peter Dress, Peter Hudek, Mathias Irmscher, Corinna Koepernik, Christian Krauss, Jason Plumhoff, Peter Voehringer

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518043

KEYWORDS: Opacity, Mask making, Electron beam lithography, Photoresist processing, Etching, Chemically amplified resists, Optical proximity correction, Line edge roughness, Photomasks, Scattering

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Proceedings Article | 28 August 2003 Paper

Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making

Mathias Irmscher, Lothar Berger, Dirk Beyer, Joerg Butschke, Peter Dress, Thomas Hoffmann, Peter Hudek, Corinna Koepernik, Martin Tschinkl, Peter Voehringer

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504185

KEYWORDS: Photomasks, Etching, Coating, Mask making, Chemically amplified resists, Binary data, Line edge roughness, Photoresist processing, Optical proximity correction, Scanning electron microscopy

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SPIE Journal Paper | 1 January 2003

Large-field particle beam optics for projection and proximity printing and for maskless lithography

Hans Loeschner, Gerhard Stengl, Herbert Buschbeck, A. Chalupka, Gertraud Lammer, Elmar Platzgummer, Herbert Vonach, Patrick de Jager, Rainer Kaesmaier, Albrecht Ehrmann, Stefan Hirscher, Andreas Wolter, Andreas Dietzel, Ruediger Berger, Hubert Grimm, Bruce Terris, Wilhelm Bruenger, Gerhard Gross, Olaf Fortagne, Dieter Adam, Michael Boehm, Hans Eichhorn, Reinhard Springer, Joerg Butschke, Florian Letzkus, Paul Ruchhoeft, John Wolfe

JM3, Vol. 2, Issue 01, (January 2003) https://doi.org/10.1117/12.10.1117/1.1528946

KEYWORDS: Ions, Ion beams, Photomasks, Particle beams, Photodynamic therapy, Maskless lithography, Magnetism, Lithography, Semiconducting wafers, Charged particle optics

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Proceedings Article | 16 August 2002 Paper

Measures to achieve 20nm IPL stencil mask distortion

Ernst Haugeneder, A. Chalupka, T Lammer, Hans Loeschner, Frank-Michael Kamm, Thomas Struck, Albrecht Ehrmann, Rainer Kaesmaier, Andreas Wolter, Joerg Butschke, Mathias Irmscher, Florian Letzkus, Reinhard Springer

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479353

KEYWORDS: Photomasks, Semiconducting wafers, Distortion, Silicon, Ion beams, Electrodes, Ions, Wafer bonding, Manufacturing, Projection lithography

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Proceedings Article | 1 August 2002 Paper

Comparative evaluation of e-beam sensitive chemically amplified resists for mask making

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Chris Constantine, Thomas Hoffmann, Corinna Koepernik, Christian Krauss, Bernd Leibold, Florian Letzkus, Dietmar Mueller, Reinhard Springer, Peter Voehringer

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476944

KEYWORDS: Photomasks, Semiconducting wafers, Mask making, Line edge roughness, Etching, Silicon, Coating, Chemically amplified resists, Photoresist processing, Chromium

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Proceedings Article | 1 July 2002 Paper

Large-field ion optics for projection and proximity printing and for maskless lithography (ML2)

Hans Loeschner, Gerhard Stengl, Herbert Buschbeck, A. Chalupka, Gertraud Lammer, Elmar Platzgummer, Herbert Vonach, Patrick de Jager, Rainer Kaesmaier, Albrecht Ehrmann, Stefan Hirscher, Andreas Wolter, Andreas Dietzel, Ruediger Berger, Hubert Grimm, Bruce Terris, Wilhelm Bruenger, Dieter Adam, Michael Boehm, Hans Eichhorn, Reinhard Springer, Joerg Butschke, Florian Letzkus, Paul Ruchhoeft, John Wolfe

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472336

KEYWORDS: Ions, Magnesium, Lithography, Mendelevium, Printing, Maskless lithography, Neodymium, Nickel, Neon, Ion beams

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Proceedings Article | 20 August 2001 Paper

Progress in placement control for ion beam stencil mask technology

Frank-Michael Kamm, Albrecht Ehrmann, Thomas Struck, Karl Kragler, Joerg Butschke, Florian Letzkus, Reinhard Springer, Ernst Haugeneder

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436673

KEYWORDS: Photomasks, Semiconducting wafers, Ions, Etching, Projection lithography, Boron, Carbon, Beam controllers, Ion beams, Optical lithography

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Proceedings Article | 9 April 2001 Paper

Progress in placement control for ion beam stencil mask technology

Frank-Michael Kamm, Albrecht Ehrmann, Thomas Struck, Karl Kragler, Joerg Butschke, Florian Letzkus, Reinhard Springer, Ernst Haugeneder, Artur Degen, Jens Voigt, Martin Kratzenberg, Ivo Rangelow

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425098

KEYWORDS: Photomasks, Ions, Semiconducting wafers, Carbon, Oxides, Lithography, Beam controllers, Ion beams, Ion implantation, Deposition processes

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Proceedings Article | 21 July 2000 Paper

Resist technologies for ion projection lithography (IPL) stencil maskmaking

Mathias Irmscher, Joerg Butschke, Klaus Elian, Bernd Hoefflinger, Karl Kragler, Florian Letzkus, Joerg Ochsenhirt, Christian Reuter, Reinhard Springer

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390072

KEYWORDS: Etching, Silicon, Carbon, Photomasks, Photoresist processing, Lithography, Ions, Silicon carbide, Mask making, Semiconducting wafers

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Proceedings Article | 21 July 2000 Paper

Stencil mask key parameter measurement and control

Albrecht Ehrmann, Annika Elsner, Roman Liebe, Thomas Struck, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Ernst Haugeneder, Hans Loeschner

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390074

KEYWORDS: Photomasks, Silicon, Carbon, Etching, Critical dimension metrology, Inspection, Semiconducting wafers, Silicon carbide, Manufacturing, Particles

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Proceedings Article | 21 July 2000 Paper

IPL stencil mask distortions: experimental and theoretical analysis

Albrecht Ehrmann, Thomas Struck, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390075

KEYWORDS: Photomasks, Semiconducting wafers, Etching, Silicon, Pellicles, Carbon, Ions, Projection lithography, Quartz, Manufacturing

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Proceedings Article | 21 July 2000 Paper

Stress engineering of SOI silicon stencil masks by boron doping concentration

Artur Degen, Jens Voigt, Martin Kratzenberg, Feng Shi, Joerg Butschke, Hans Loeschner, Rainer Kaesmaier, Albrecht Ehrmann, Ivo Rangelow

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390076

KEYWORDS: Chemical species, Silicon, Doping, Boron, Photomasks, Diffraction, 3D modeling, Semiconducting wafers, Optical spheres, Crystals

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Proceedings Article | 3 February 2000 Paper

Optimization of the e-beam sensitive bilayer CARL process for stencil mask making

Joerg Ochsenhirt, Joerg Butschke, Florian Letzkus, Bernd Hoefflinger, Mathias Irmscher, Christian Reuter, Reinhard Springer, Klaus Elian

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377121

KEYWORDS: Silicon, Photoresist processing, Photomasks, Etching, Mask making, Tin, Plasma, Line edge roughness, Statistical analysis, Critical dimension metrology

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Proceedings Article | 30 December 1999 Paper

Placement measurement and FE modeling results for distortion control of stencil masks

Albrecht Ehrmann, Thomas Struck, Rainer Kaesmaier, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Roxann Engelstad

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373376

KEYWORDS: Photomasks, Semiconducting wafers, Distortion, Silicon, Etching, Electron beam lithography, Oxides, Quartz, Semiconductor lasers, Lamps

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Proceedings Article | 23 April 1999 Paper

PN and SOI wafer flow process for stencil mask fabrication

Joerg Butschke, Albrecht Ehrmann, Ernst Haugeneder, Mathias Irmscher, Rainer Kaesmaier, Karl Kragler, Florian Letzkus, Hans Loeschner, Josef Mathuni, Ivo Rangelow, Carsten Reuter, Feng Shi, Reinhard Springer

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346224

KEYWORDS: Etching, Semiconducting wafers, Silicon, Photomasks, Oxides, Electrochemical etching, Metals, Lithography, Ions, Wafer bonding

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Proceedings Article | 18 December 1998 Paper

Stencil mask technology for ion beam lithography

Albrecht Ehrmann, Sabine Huber, Rainer Kaesmaier, Andreas Oelmann, Thomas Struck, Reinhard Springer, Joerg Butschke, Florian Letzkus, Karl Kragler, Hans Loeschner, Ivo Rangelow

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332827

KEYWORDS: Photomasks, Semiconducting wafers, Silicon, Ions, Etching, Carbon, Control systems, Ion beam lithography, Lithography, Inspection

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Showing 5 of 53 publications

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