Paper
8 November 2005 Determination of mask layer stress by placement metrology
Author Affiliations +
Abstract
The present paper will show an approach for a local and global stress determination by the application of a Leica LMS IPRO II mask registration tool. Changes in placement due to a full or partial layer removal on single materials as well as material stacks with respect to a reference grid were determined. Simulation using finite element modeling was conducted to calculate stress values from the placement information. Finally, an estimate was made of the acceptable stress level for a sample design to meet placement requirements for future lithography nodes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jörg Butschke, Ute Buttgereit, Eric Cotte, Günter Hess, Mathias Irmscher, and Holger Seitz "Determination of mask layer stress by placement metrology", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923U (8 November 2005); https://doi.org/10.1117/12.631526
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CITATIONS
Cited by 3 scholarly publications and 4 patents.
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KEYWORDS
Photomasks

Tantalum

Metrology

Optical lithography

Chromium

Image registration

Interferometers

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