Mr. Roman Liebe Profile

Roman Liebe

Senior Process Engineer at Advanced Mask Technology Ctr

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Author

Publications (12)

Proceedings Article | 3 May 2007 Paper

Calibration of CD mask standards for the 65-nm node: CoG and MoSi

J. Richter, T. Heins, R. Liebe, B. Bodermann, A. Diener, D. Bergmann, C. Frase, H. Bosse

Proceedings Volume 6533, 65330S (2007) https://doi.org/10.1117/12.736931

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Photomasks, Calibration, Ultraviolet radiation, Microscopy, Atomic force microscopy, Standards development, Opacity, Metrology

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Proceedings Article | 21 June 2006 Paper

Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test mask

F. Gans, R. Liebe, Th. Heins, J. Richter, W. Häβler-Grohne, C. Frase, B. Bodermann, S. Czerkas, K. Dirscherl, H. Bosse

Proceedings Volume 6281, 62810D (2006) https://doi.org/10.1117/12.692736

KEYWORDS: Scanning probe microscopy, Scanning electron microscopy, Critical dimension metrology, Photomasks, Ultraviolet radiation, Metrology, Microscopy, Opacity, Electrons, Etching

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Proceedings Article | 20 May 2006 Paper

Measurement tool influence on CD results on photolithographic masks

Jan Richter, Roman Liebe, Frank Laske, Jens Rudolf, Torben Heins

Proceedings Volume 6283, 628315 (2006) https://doi.org/10.1117/12.681867

KEYWORDS: Critical dimension metrology, Photomasks, Calibration, Scanning electron microscopy, Etching, Dry etching, Metrology, Photoresist processing, Phase shifts, Atomic force microscopy

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The precise targeting of critical dimension (CD) features on photolithographic masks is an essential part of the mask production process. It is straight forward that the usual decrease of specification numbers can only be achieved using cutting edge CD Metrology tools. That also implies that the most advanced CD tool might change from node to node and over time mask houses accommodate a small variety of different tools. Therefore, it is an important task of current mask metrology to ensure accurate matching and calibration and also to transfer these standards precisely over time. Here, we investigate the influences of the photolithographic mask material and the resist type on critical dimension measurements utilizing one Atomic Force Microscope (AFM), two CD-Scanning electrical microscopes (CD-SEM) by different suppliers and one optical CD tool. Simulating usual mask house strategies we defined one CD tool as golden tool and measured a 700 A chrome mask on it. This reference measurement was then repeated on all other tools and each of them was matched to the golden tool using standard procedures. Once matching was achieved 5 other masks were measured on all tools with exactly the same settings as the reference measurements. In all we varied the material COG, Mosi193, Mosi248, Chrome thickness 700A and 1000A and different resists. We do observe that calibration within the CD SEM tool class works very well for linearity, but with detectable offset in the range of a couple of nm for different reference masks used. Cross-calibration on the other hand from optical CD to CD SEM tools shows significant differences for process variations, layer thickness and different materials. These findings strongly point out that first of all cross calibration is extremely difficult with current metrology tools and can not be utilized for high end products with the necessary precision. And secondly, even matching within tool classes is material dependent which has to be considered for accurate tool to tool matching.

Proceedings Article | 24 March 2006 Paper

Line edge roughness on photo lithographic masks

Torben Heins, Uwe Dersch, Roman Liebe, Jan Richter

Proceedings Volume 6152, 61521O (2006) https://doi.org/10.1117/12.655531

KEYWORDS: Line edge roughness, Photomasks, Semiconducting wafers, Lithography, Scanning electron microscopy, Electron microscopes, Standards development, Semiconductors, Critical dimension metrology, Electron beams

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Proceedings Article | 16 June 2005 Paper

Results of a round robin measurement on a new CD mask standard

F. Gans, R. Liebe, J. Richter, Th. Schatz, B. Hauffe, F. Hillmann, S. Dobereiner, H.-J. Bruck, G. Scheuring, B. Brendel, L. Bettin, K.-D. Roth, W. Steinberg, G. Schluter, P. Speckbacher, W. Sedlmeier, T. Scherubl, W. Hassler-Grohne, C. Frase, S. Czerkas, K. Dirscherl, B. Bodermann, W. Mirande, H. Bosse

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637313

KEYWORDS: Calibration, Photomasks, Ultraviolet radiation, Scanning electron microscopy, Standards development, Critical dimension metrology, Deep ultraviolet, Chromium, Microscopy, Opacity

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Proceedings Article | 2 June 2003 Paper

Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers

Roman Liebe, Henning Haffner, Shirley Hemar, Anja Rosenbusch, Jerry Chen, Franklin Kalk

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483535

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Reticles, Optical proximity correction, Image quality, Printing, Image enhancement, Detector development, Optical lithography

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Proceedings Article | 11 March 2002 Paper

Inspection of EAPSMs for 193-nm technology generation using a UV-based 365-nm reticle inspection tool

Michael Har-zvi, Roman Liebe, Anja Rosenbusch, Gidon Gottlib

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458359

KEYWORDS: Inspection, Photomasks, Critical dimension metrology, Calibration, Reticles, Phase shifts, 193nm lithography, Databases, Halftones, Sensors

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Proceedings Article | 5 September 2001 Paper

Defect printability study with programmed defects on halftone reticles

Wolfgang Dettmann, Henning Haffner, Jan Heumann, Roman Liebe, R. Ludwig, R. Moses

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438398

KEYWORDS: Photomasks, Scanning electron microscopy, Halftones, Semiconducting wafers, Printing, Inspection, Reticles, Image transmission, Phase shifts, Wafer-level optics

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Proceedings Article | 9 April 2001 Paper

Quality assessment of advanced photomasks using the Q-CAP cluster tool

Kai Peter, Thomas Schaetz, Volodymyr Ordynskyy, Roman Liebe, Martin Verbeek, Gerald Galan, Emanuele Baracchi, Corinne Miramond, Hans-Juergen Brueck, Gerd Scheuring, Thomas Engel, Yair Eran, Karl Sommer, Hans Hartmann

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425084

KEYWORDS: Photomasks, Semiconducting wafers, Databases, Inspection, Optical proximity correction, Defect inspection, Data conversion, Wafer inspection, Computed tomography, Lithographic illumination

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Proceedings Article | 22 January 2001 Paper

Mask manufacturing rule check: how to save money in your mask shop

Martin Keck, Wolfram Ziegler, Roman Liebe, Torsten Franke, Gerd Ballhorn, Matthias Koefferlein, Joerg Thiele

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410681

KEYWORDS: Inspection, Photomasks, Manufacturing, Optical proximity correction, Inspection equipment, Computed tomography, Detection and tracking algorithms, Bridges, Tungsten, Silver

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Proceedings Article | 22 January 2001 Paper

New approach to improve CD uniformity based on mask quality

Roman Liebe, Carmen Jaehnert, Gidon Gottlib, Yair Eran, Shirley Hemar, Amikam Sade, Anja Rosenbusch

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410673

KEYWORDS: Photomask technology

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Proceedings Article | 21 July 2000 Paper

Stencil mask key parameter measurement and control

Albrecht Ehrmann, Annika Elsner, Roman Liebe, Thomas Struck, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Ernst Haugeneder, Hans Loeschner

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390074

KEYWORDS: Photomasks, Silicon, Carbon, Etching, Critical dimension metrology, Inspection, Semiconducting wafers, Silicon carbide, Manufacturing, Particles

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Showing 5 of 12 publications

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