Dr. Jeffery T. Wetzel Profile

Dr. Jeffery T. Wetzel

at SVTC Technologies LLC

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 26 March 2008 Paper

High resolution nanoimprint templates for dual damascene: fabrication and imprint results

Mathias Irmscher, Joerg Butschke, Ron Carpio, Brook Chao, Wei-Lun Jen, Corinna Koepernik, Lorenz Nedelmann, Jordan Owens, Frank Palmieri, Marcus Pritschow, Christian Reuter, Holger Sailer, Ken Satoodeh, Jeff Wetzel, Bruce Wilks, Grant Willson

Proceedings Volume 6921, 69210D (2008) https://doi.org/10.1117/12.772295

KEYWORDS: Etching, Chromium, Quartz, Manufacturing, Metals, Ultraviolet radiation, Photomasks, Optical lithography, Nanoimprint lithography, Lithography

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Proceedings Article | 20 March 2008 Paper

Dual damascene BEOL processing using multilevel step and flash imprint lithography

Brook Chao, Frank Palmieri, Wei-Lun Jen, D. Hale McMichael, C. Grant Willson, Jordan Owens, Rich Berger, Ken Sotoodeh, Bruce Wilks, Joseph Pham, Ronald Carpio, Ed LaBelle, Jeff Wetzel

Proceedings Volume 6921, 69210C (2008) https://doi.org/10.1117/12.772908

KEYWORDS: Etching, Chemistry, Dielectrics, Back end of line, Lithography, Optical lithography, Resistance, Reactive ion etching, Critical dimension metrology, Metals

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Step and Flash Imprint Lithography (S-FIL®) in conjunction with Sacrificial Imprint Materials (SIM) shows promise as a cost effective solution to patterning sub 45nm features and is capable of simultaneously patterning two levels of interconnect structures, which provides a high throughput and low cost BEOL process. This paper describes the integration of S-FIL into an industry standard Cu/low-k dual damascene process that is being practiced in the ATDF at Sematech in Austin. The pattern transferring reactive ion etching (RIE) process is the most critical step and was extensively explored in this study. In addition to successful process development, the results provide useful insight into the optimal design of multilevel templates which must take into account the characteristics of both the imaging material and the dielectric layer. The template used in this study incorporates both the via and trench levels of an M2 (Metal 2) test vehicle that incorporates via chains with varying via dimensions, Kelvin test structures, serpentines, etc. The smallest vias on the template are 120nm vias with an aspect ratio of 2.0 and the smallest dense lines are 125nm/175nm with an aspect ratio of 2.9. Two inter-level dielectrics (ILD), Coral® and Black Diamond® were studied. No trench etch stop was incorporated in the ILD film stack. A multi-step, in-situ etching scheme was developed that achieves faithful pattern transfer from the sacrificial imprint material (SIM) into the underlying low k ILD with surprisingly wide process latitude. This multi-step scheme includes the following etch steps: a residual layer open, a via etch, a trench descum, a trench etch, and an SIM removal ash. Among these steps, the trench etch was found to be the most challenging to develop and it holds the key to producing high aspect ratio dual damascene features. An etching chemistry based on two fluorocarbon gases, CF₄ and C₄F₈, was found to be very effective in delivering the desired etch profiles with optimal sidewall angle, minimal facet formation. The optimized etch process can be exploited to provide substantial size reduction and/or increased aspect ratio relative to the template. In this way structures with final critical dimensions of 95nm in vias with aspect ratio of 3.0 and 67nm/233nm in dense lines with aspect ratio of 3.6 were demonstrated with wide process latitude. This enables manufacturing of the template at larger dimensions, which simplifies both fabrication and inspection. The successful development of the dual damascene RIE process at the second metal (M2) level was demonstrated in a mixed and matched build with an ATDF standard first layer metal (M1) process. The M1 dielectric was TEOS and was patterned by 248nm lithography. The M2 and Via levels used Coral as ILD and both levels were patterned simultaneously by S-FIL using Molecular Imprint Imprio 55 and Imprio 100 imprint tools. This electrical test vehicle provided solid evidence that S-FIL is fully compatible with industry standard dual damascene process.

Proceedings Article | 23 March 2006 Paper

Multi-level step and flash imprint lithography for direct patterning of dielectrics

Frank Palmieri, Michael Stewart, Jeff Wetzel, Jianjun Hao, Yukio Nishimura, Kane Jen, Colm Flannery, Bin Li, Huang-Lin Chao, Soo Young, Woon Kim, Paul Ho, C. Willson

Proceedings Volume 6151, 61510J (2006) https://doi.org/10.1117/12.655604

KEYWORDS: Dielectrics, Copper, Sol-gels, Polymers, Silicon, Optical lithography, Chemical mechanical planarization, Liquids, Polymerization, Lithography

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Proceedings Article | 6 May 2005 Paper

Direct imprinting of dielectric materials for dual damascene processing

Michael Stewart, Jeffery Wetzel, Gerard Schmid, Frank Palmieri, Ecron Thompson, Eui Kyoon Kim, David Wang, Ken Sotodeh, Kane Jen, Stephen Johnson, Jianjun Hao, Michael Dickey, Yukio Nishimura, Richard Laine, Douglas Resnick, C. Willson

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599977

KEYWORDS: Dielectrics, Silicon, Copper, Semiconducting wafers, Optical lithography, Etching, Lithography, Metals, Nanoimprint lithography, Plasma etching

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