Dr. James F. Cameron Profile

Dr. James F. Cameron

Technical Fellow

SPIE Involvement:

Conference Program Committee | Author

Area of Expertise:

Lithography , Patterning Materials , Photoresists , Electronic Materials , Device Integration , Material Design and Synthesis

Profile Summary

Summary
Recognized expert in the field of materials for advanced semiconductor manufacture. Over 25 years of experience in electronic materials including photoactive materials, photoresists and underlayer films used in the production of state of the art transistor devices. Proven track record of developing innovative materials and products to support semiconductor device scaling: Chemically Amplified (CA) resists [193nm, 248nm & Extreme Ultra-Violet (EUV)], Bottom Antireflective Coatings (BARCs) (including Organic, Silicon & Developable types) and Spin on Carbon (SOC) Underlayers.

Overview of Skills and Expertise
• Expert in organic chemistry, polymer synthesis and organic photochemistry.
• Detailed understanding of advanced materials characterization for electronic materials.
• Extensive experience in all aspects of advanced lithographic patterning.
• In depth knowledge of advanced semiconductor device manufacture.
• Deep insight into product development process including robust design for quality specifications.
• Proven ability to introduce novel technology into the semiconductor industry.

Publications (45)

Proceedings Article | 9 April 2024 Paper

Paper

Disruptive non-fluorinated photoacid generators using computational chemistry and library design

P. LaBeaume, K. Hernandez, E. Vitaku, T. Marangoni, E. Aqad, M. Li, C. Hoelzel, J. Lachowski, M. Hayes, S. Wong, J. Li, A. Kwok, W. Huang, J. Park, H. He, H. Mackay, C. Liu, J. Cameron, C. Xu, Q. Xie, K. Petrillo

Proceedings Volume 12957, 129572B (2024) https://doi.org/10.1117/12.3025297

KEYWORDS: Photoacid generators, Photoresist materials, Semiconducting wafers, Design, Lithography, Optical lithography, Coating thickness, Chemistry, Coating, Silicon, Sustainability, Extreme ultraviolet lithography

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Proceedings Article | 1 May 2023 Poster + Paper

Poster + Paper

Considerations in the design of photoacid generators

Conner Hoelzel, Li Cui, Benjamin Naab, Jong Park, Philjae Kang, Kenneth Hernandez, Suzanne Coley, Stefan Alexandrescu, Rochelle Rena, James Cameron, Emad Aqad

Proceedings Volume 12498, 124981V (2023) https://doi.org/10.1117/12.2658981

KEYWORDS: Photoacid generators, Extreme ultraviolet lithography, Electrons, Extreme ultraviolet, Polymers, Design and modelling, Lithography, Materials properties, Line width roughness, Semiconducting wafers

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Proceedings Article | 1 May 2023 Presentation + Paper

Presentation + Paper

Fundamental studies of interactions between polymer substrate and precursor in sequential infiltration synthesis

Francis McCallum, Jiacheng Zhao, Md. Daloar Hossain, Joshua Kaitz, James Cameron, Peter Trefonas, Idriss Blakey, Hui Peng, Andrew Whittaker

Proceedings Volume 12498, 124980U (2023) https://doi.org/10.1117/12.2655986

KEYWORDS: Polymers, Polymethylmethacrylate, Spectroscopy, Molecular interactions, Molecules, FT-IR spectroscopy, Atomic layer deposition, Vacuum, Silicon, Semiconducting wafers

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Proceedings Article | 30 April 2023 Presentation

Presentation

Challenges and opportunities in material development and understanding that enables advanced photolithography

Mingqi Li, Emad Aqad, Tomas Marangoni, James Cameron, Paul LaBeaume, Jung-June Lee, Jae-Hwan Sim, Choong Bong Lee, Xisen Hou, Michael Eller, Stanislav Verkhorurov, Emile Schweikert, Peter Trefonas, Chengbai Xu

Proceedings Volume 12498, 124980H (2023) https://doi.org/10.1117/12.2657445

KEYWORDS: Optical lithography, Thin films, Semiconductors, Semiconductor manufacturing, Photoresist materials, Manufacturing, Lithography

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Spatial arrangement of block copolymer nanopatterns using photoactive homopolymer substrates

Jiacheng Zhao, Francis McCallum, Zhen Jiang, Joshua Kaitz, James Cameron, Peter Trefonas, Idriss Blakey, Hui Peng, Andrew Whittaker

Proceedings Volume 11612, 116120Q (2021) https://doi.org/10.1117/12.2586516

KEYWORDS: Nanostructures, Photomasks, Nanolithography, Control systems, Ultraviolet radiation, Thin films, Nanodomains, Interfaces, Fabrication, Electron beams

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Reducing the absorbance of a high etch resistant spin-on carbon hardmask

Anton Chavez, Iou-Sheng Ke, Sabrina Wong, Curtis Williamson, Li Cui, Paul LaBeaume, Jim Cameron, Shintaro Yamada

Proceedings Volume 11612, 116120F (2021) https://doi.org/10.1117/12.2583630

KEYWORDS: Etching, Absorbance, Carbon, Resistance, System on a chip, Reactive ion etching, Polymers, Image processing, Photoresist materials, Optical lithography

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Design considerations for chemically amplified EUV resist materials

Emad Aqad, ChoongBong Lee, Suzanne Coley, Ke Yang, Li Cui, Manibarsha Goswami, Bhooshan Popere, Tomas Marangoni, James Cameron, James Thackeray

Proceedings Volume 11609, 116090I (2021) https://doi.org/10.1117/12.2583642

KEYWORDS: Extreme ultraviolet, Polymers, Absorption, Quantum efficiency, Imaging systems, Yield improvement, Systems modeling, Stochastic processes, Modulation, Lithography

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Proceedings Article | 23 March 2020 Paper

Paper

Planarized spin-on carbon hardmask

Iou-Sheng (Ike) Ke, Sheng Liu, Keren Zhang, Li Cui, Suzanne Coley, Shintaro Yamada, Jim Cameron

Proceedings Volume 11326, 1132617 (2020) https://doi.org/10.1117/12.2549015

KEYWORDS: System on a chip, Etching, Thin film coatings, Polymers, Resistance, Carbon, Chemical vapor deposition, Coating, Reactive ion etching, Silicon

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Proceedings Article | 23 March 2020 Paper

Paper

Design considerations for high etch resistance spin-on carbon underlayers

Li Cui, Iou-Sheng Ke, Anton Chavez, Keren Zhang, Paul LaBeaume, Suzanne Coley, Shintaro Yamada, Jim Cameron, Lei Zhang, William Marshall, Benjamin Foltz

Proceedings Volume 11326, 113261N (2020) https://doi.org/10.1117/12.2552024

KEYWORDS: System on a chip, Polymers, Etching, Resistance, Carbon, Polymer thin films, X-rays, FT-IR spectroscopy, Reactive ion etching

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Proceedings Article | 25 March 2019 Presentation + Paper

Presentation + Paper

Evolution of lithographic materials enabling the semiconductor industry

James Thackeray, Cheng Bai Xu, James Cameron

Proceedings Volume 10960, 1096013 (2019) https://doi.org/10.1117/12.2515895

KEYWORDS: Etching, Lithography, System on a chip, Optical lithography, Resistance, Reflectivity, Photoresist materials, Critical dimension metrology, Polymers, Argon

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Proceedings Article | 25 March 2019 Paper

Paper

High temperature spin on carbon materials with excellent planarization and CVD compatibility

Keren Zhang, Li Cui, Shintaro Yamada, Jim Cameron, Sabrina Wong, Lawrence Chen, Suzanne Coley, Dan Greene, Joshua Kaitz, Iou-Sheng Ke, Bhooshan Popere, Paul LaBeaume, Benjamin Foltz, Lei Zhang, Kenneth Kearns, Johnpeter Ngunjiri

Proceedings Volume 10960, 1096019 (2019) https://doi.org/10.1117/12.2514968

KEYWORDS: Chemical vapor deposition, Carbon, Polymers, Resistance, Coating, Etching, 193nm lithography, Materials

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SPIE Journal Paper | 22 June 2018

High-speed atomic force microscopy studies of 193-nm immersion photoresists during tetramethylammonium hydroxide development

Johnpeter Ngunjiri, Gregory Meyers, James Cameron, Yasuhiro Suzuki, Hyun Jeon, Dave Lee, Kwang Mo Choi, Jung Woo Kim, Kwang-Hwyi Im, Hae-Jin Lim

JM3, Vol. 17, Issue 02, 023506, (June 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.2.023506

KEYWORDS: Atomic force microscopy, Line edge roughness, Photoresist processing, Photoresist developing, Image processing, Standards development, Photoresist materials, Optical lithography, Polymers, Pulmonary function tests

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Proceedings Article | 13 March 2018 Paper

Paper

The development of an SC1 removable si-anti-reflective-coating

Shintaro Yamada, Iou-Sheng Ke, Charlotte Cutler, Li Cui, Paul LaBeaume, Daniel Greene, Bhooshan Popere, Chris Sullivan, JoAnne Leonard, Suzanne Coley, Sabrina Wong, Owendi Ongayi, Jim Cameron, Michael Clark, Thomas Fitzgibbons

Proceedings Volume 10586, 105860L (2018) https://doi.org/10.1117/12.2297687

KEYWORDS: Etching, Dry etching, Lithography, Polymers, Reflectivity, Ion implantation

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Proceedings Article | 21 March 2016 Paper

Paper

High speed AFM studies of 193 nm immersion photoresists during TMAH development

Johnpeter Ngunjiri, Greg Meyers, Jim Cameron, Yasuhiro Suzuki, Hyun Jeon, Dave Lee, Kwang Mo Choi, Jung Woo Kim, Kwang-Hwyi Im, Hae-Jin Lim

Proceedings Volume 9779, 97790W (2016) https://doi.org/10.1117/12.2218956

KEYWORDS: Polymers, 193nm lithography, Scanners, Standards development, Immersion lithography, Extreme ultraviolet lithography

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Proceedings Article | 17 April 2014 Paper

Paper

Understanding EUV resist mottling leading to better resolution and linewidth roughness

James Thackeray, James Cameron, Vipul Jain, Paul LaBeaume, Suzanne Coley, Owendi Ongayi, Mike Wagner, John Biafore, Jun Sung Chun

Proceedings Volume 9048, 904807 (2014) https://doi.org/10.1117/12.2046392

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Line width roughness, Diffusion, Carbon, Lithography, Semiconducting wafers, Line edge roughness, Interferometry, Surface roughness

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Proceedings Article | 1 April 2013 Paper

Paper

Effect of leaving group design on EUV lithography performance

Owendi Ongayi, Vipul Jain, Suzanne Coley, David Valeri, Amy Kwok, Dung Quach, Mike Wagner, Jim Cameron, Jim Thackeray

Proceedings Volume 8679, 867907 (2013) https://doi.org/10.1117/12.2011600

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist materials, Radiation effects, Lithography, Neodymium, Silicon, Spectroscopy, Polymer thin films

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Proceedings Article | 29 March 2013 Paper

Paper

Progress in resolution, sensitivity, and critical dimensional uniformity of EUV chemically amplified resists

James Thackeray, James Cameron, Vipul Jain, Paul LaBeaume, Suzanne Coley, Owendi Ongayi, Mike Wagner, Aaron Rachford, John Biafore

Proceedings Volume 8682, 868213 (2013) https://doi.org/10.1117/12.2011565

KEYWORDS: Extreme ultraviolet, Diffusion, Extreme ultraviolet lithography, Polymers, Chemically amplified resists, Line width roughness, Stochastic processes, Lithography, Photomasks, Electrodes

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Proceedings Article | 23 March 2012 Paper

Paper

Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning

James Cameron, Jim Thackeray, Jin Wuk Sung, Suzanne Coley, Vipul Jain, Owendi Ongayi, Mike Wagner, Paul LaBeaume, Amy Kwok, David Valeri, Marie Hellion, Béatrice Icard, Bernard Dal'zotto, Claire Sourd, Laurent Pain

Proceedings Volume 8322, 83222F (2012) https://doi.org/10.1117/12.916598

KEYWORDS: Extreme ultraviolet, Electron beam lithography, Extreme ultraviolet lithography, Lithography, Polymers, Semiconductors, Line width roughness, Maskless lithography, Photomasks, EUV optics

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Proceedings Article | 23 March 2012 Paper

Paper

High sensitivity chemically amplified EUV resists through enhanced EUV absorption

Owendi Ongayi, Matthew Christianson, Matthew Meyer, Suzanne Coley, David Valeri, Amy Kwok, Mike Wagner, Jim Cameron, Jim Thackeray

Proceedings Volume 8322, 83220T (2012) https://doi.org/10.1117/12.916482

KEYWORDS: Polymers, Extreme ultraviolet, Absorption, Line width roughness, Extreme ultraviolet lithography, Polymer thin films, Chromophores, Electrons, Molecules, Photoresist materials

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Proceedings Article | 20 March 2012 Paper

Paper

Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates

James Thackeray, James Cameron, Michael Wagner, Suzanne Coley, Owendi Ongayi, Warren Montgomery, Dave Lovell, John Biafore, Vidhya Chakrapani, Akiteru Ko

Proceedings Volume 8325, 832508 (2012) https://doi.org/10.1117/12.917807

KEYWORDS: Extreme ultraviolet, Silicon, Line width roughness, Diffusion, Polymers, Lithography, Extreme ultraviolet lithography, Etching, Mirrors, Absorption

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Proceedings Article | 16 April 2011 Paper

Paper

Method of ellipsometric characterization of the resist and DBARC interface

Michael Reilly, James Cameron, Sabrina Wong, Adam Ware

Proceedings Volume 7972, 79722O (2011) https://doi.org/10.1117/12.880982

KEYWORDS: Image processing, Interfaces, Reflection, Photoresist processing, Data modeling, Silicon, Scanning electron microscopy, Polymers, Semiconducting wafers, Ions

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Proceedings Article | 16 April 2011 Paper

Paper

Physical modeling of developable BARC at KrF

Michael Reilly, John Biafore, James Cameron, Stewart Robertson

Proceedings Volume 7972, 79720Z (2011) https://doi.org/10.1117/12.880980

KEYWORDS: Data modeling, Polymers, Lithography, Interfaces, Photoresist developing, Semiconducting wafers, Absorption, Diffusion, Neodymium, Photoresist materials

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Proceedings Article | 16 April 2011 Paper

Paper

Developable BARC (DBARC) technology as a solution to today's implant lithography challenges

James Cameron, Jin Wuk Sung, Sabrina Wong, Adam Ware, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Steve Holmes, Irene Popova, Ranee Kwong, Pushkara Rao Varanasi

Proceedings Volume 7972, 797214 (2011) https://doi.org/10.1117/12.881614

KEYWORDS: Lithography, Optical lithography, Control systems, Reflectivity, Coating, Photoresist processing, Antireflective coatings, Etching, Standards development, Bottom antireflective coatings

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Proceedings Article | 26 March 2010 Paper

Paper

Design and development of production-worthy developable BARCs(DBARCs) for implant lithography

James Cameron, John Amara, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Irene Popova, Pushkara Varanasi

Proceedings Volume 7639, 76390H (2010) https://doi.org/10.1117/12.846708

KEYWORDS: Semiconducting wafers, Oxides, Lithography, Silicon, Optical lithography, Resistance, Photoresist materials, Electroluminescence, Reflectivity, Critical dimension metrology

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Proceedings Article | 1 April 2009 Paper

Paper

Progress towards production worthy developable BARCs (DBARCs)

James Cameron, John Amara, Gregory Prokopowicz, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Tomoki Kurihara, Libor Vyklicky, Wu-Song Huang, Irene Popova, Pushkara Rao Varanasi

Proceedings Volume 7273, 72733L (2009) https://doi.org/10.1117/12.814421

KEYWORDS: Lithography, Silicon, Etching, Standards development, Optical lithography, Reflectivity, Polymers, Carbon, Reflection, Photoresist materials

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Developable bottom anti-reflective coating (DBARC) technology holds promise in two main areas of lithography. The first application of DBARC is in implant lithography where patterning implant levels would greatly benefit from improved reflection control such as provided by a conventional BARC. However, implant layers cannot withstand BARC open etch thereby making DBARC an attractive solution as the resist and DBARC are simultaneously dissolved during the development step leaving the underlying substrate ready for implantation. In comparison to current implant processes with top anti-reflective coatings (TARC), DBARCs are anticipated to offer improvements in reflection control which would translate to improved CDU and increased process window for both KrF and ArF implants. Indeed, this area has long been considered the ideal insertion point for DBARC technology. The second area where DBARC technology can make a significant impact is in non-implant lithography. In this large segment, the ability to replace a conventional BARC with a DBARC affords the device maker the ability to simplify both lithographic and integration processes. By replacing the BARC with a DBARC, the BARC open etch is negated. Furthermore, by applying this strategy on multilayer stacks it is possible to greatly simplify the process by avoiding both CVD steps and pattern transfer steps thereby easing integration. In this area, DBARC technology could have merit for low k1 KrF and ArF (dry) lithography as well as in immersion ArF processes. This paper describes our results in designing production worthy DBARCs for both implant and non-implant applications. A newly developed KrF DBARC platform is evaluated for logic implant applications and compared to a standard TARC implant process. Post develop residue and defectivity are checked for the new platform and the results compared to production worthy BARC and implant resists. A new ArF platform was also developed and initial lithographic results are reported for an implant application. Several non-implant applications were also investigated and results are reported for high resolution KrF and ArF (dry) lithography as well as an immersion ArF process.

Proceedings Article | 14 May 2004 Paper

Paper

Why do weak acids not work in 193-nm photoresists?: matrix effects on acid-catalyzed deprotection

Gerd Pohlers, George Barclay, Azher Razvi, Carolyne Stafford, Anthony Barbieri, James Cameron

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537186

KEYWORDS: Systems modeling, Polymers, Carbonates, Photoresist materials, Absorbance, Molecules, Data modeling, Chemistry, Matrices, Medium wave

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Proceedings Article | 12 June 2003 Paper

Paper

Bilayer technology for ArF and F2 lithography: the development of resists to minimize silicon outgassing

George Barclay, Subbareddy Kanagasabapathy, Gerd Pohlers, Joseph Mattia, Kao Xiong, Sheri Ablaza, James Cameron, Tony Zampini, Tao Zhang, Shintaro Yamada, Francois Huby, Kenneth Wiley

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485141

KEYWORDS: Silicon, Polymers, Etching, Lithography, Photoresist materials, Imaging systems, Resistance, Chromatography, Calibration, Photoresist developing

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Proceedings Article | 2 June 2003 Paper

Paper

Calibration and validation of projection lithography in chemically amplified resist systems using fluorescence imaging

Michael Mason, Krishanu Ray, Gilbert Feke, Robert Grober, Gerd Pohlers, James Cameron

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483753

KEYWORDS: Luminescence, Semiconducting wafers, Calibration, Projection lithography, Scanning electron microscopy, Imaging systems, Chemically amplified resists, Spectroscopy, Optical filters, Fluorescence spectroscopy

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Coumarin 6 (C6), a pH sensitive fluorescent molecule were doped into commercial resist systems to demonstrate a cost-effective fluorescence microscopy technique for detecting latent photoacid images in exposed chemically amplified resist films. The fluorescenec image contrast is optimized by carefully selecting optical filters to match the spectroscopic properties of C6 in the resist matrices. We demonstrate the potential of this technique for two sepcific non-invasive applications. First, a fast, conventient, fluorescence technique is demonstrated for determination of quantum yeidsl of photo-acid generation. Since the Ka of C6 in the 193nm resist system lies wihtin the range of acid concentrations that can be photogenerated, we have used this technique to evaluate the acid generation efficiency of various photo-acid generators (PAGs). The technique is based on doping the resist formulations containing the candidate PAGs with C6, coating one wafer per PAG, patterning the wafer with a dose ramp and spectroscopically imaging the wafers. The fluorescence of each pattern in the dose ramp is measured as a single image and analyzed with the optical titration model. Second, a nondestructive in-line diagnostic technique is developed for the focus calibration and validation of a projection lithography system. Our experimental results show excellent correlation between the fluorescence images and scanning electron microscope analysis of developed features. This technique has successfully been applied in both deep UV resists e.g., Shipley UVIIHS resist and 193 nm resists e.g., Shipley Vema-type resist. This method of focus calibration has also been extended to samples with feature sizes below the diffraction limit where the pitch between adjacent features is on the order of 300 nm. Image capture, data analysis, and focus latitude verification are all computer controlled from a single hardware/software platform. Typical focus calibration curves can be obtained within several minutes.

Proceedings Article | 24 July 2002 Paper

Paper

Transparency vs. efficiency in 193-nm photoacid generator design

Gerd Pohlers, Yasuhiro Suzuki, Nicholas Chan, James Cameron

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474217

KEYWORDS: Transparency, Quantum efficiency, Lithography, 193nm lithography, Absorbance, Polymers, Semiconducting wafers, Chromophores, Deep ultraviolet, Absorption

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Proceedings Article | 24 July 2002 Paper

Paper

Ultrathin DUV resists for logic applications

James Thackeray, James Cameron, Michael Cronin, Wesley Brykailo, Doris Kang

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474274

KEYWORDS: Lithography, Logic, Deep ultraviolet, Semiconducting wafers, Systems modeling, Logic devices, Etching, Thin films, Photomasks, Optics manufacturing

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Proceedings Article | 24 August 2001 Paper

Paper

Design and performance of photoresist materials for ArF lithography

Hyun-Woo Kim, Dong-Won Jung, Sook Lee, Sang-Jun Choi, Sang-Gyun Woo, Robert Kavanagh, George Barclay, Robert Blacksmith, Doris Kang, Gerd Pohlers, James Cameron, Joe Mattia, Stefan Caporale, Thomas Penniman, Lori Joesten, James Thackeray

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436908

KEYWORDS: Etching, Polymers, Monochromatic aberrations, Lithography, Line edge roughness, Resistance, Photoresist materials, Photoresist processing, Absorbance, Resist chemistry

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Proceedings Article | 24 August 2001 Paper

Paper

Comparison of acid-generating efficiencies in 248 and 193-nm photoresists

James Cameron, Nicholas Chan, Kathryn Moore, Gerd Pohlers

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436838

KEYWORDS: Polymers, Quantum efficiency, Photoresist materials, Deep ultraviolet, Photons, Absorbance, Absorption, Semiconducting wafers, Matrices, Chromophores

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Photoacid generation is a critical step in the application of chemically amplified (CA) resist technology. During the key exposure step, a catalytic amount of a strong Bronsted acid is released within these resists. The photoacid is subsequently used in a post-exposure bake step to catalytically react with the resist polymer. In the case of a positive tone resist, an acid sensitive polymer is deprotected to render the exposed areas soluble in dilute aqueous base thereby allowing for pattern development. As the semicondutor industry beings to focus on developing 193 nm photoresists for production, it si important to identify and understand differences between prototype 193nm CA resists and current state of the art 248nm production worth photoresists. The major difference between 193 and 248 nm photoresists is the exposure wavelength, which isr educed to achieve higher resolution based on the Rayleigh equation. However, this change in wavelength has several ramifications: Firstly, the tried, tested and true phenolic polymers used in DUV resists are too absorbent to be used fo 193nm application and had to be replaced by low absorbing, non-aromatic systems. Second, since even these new platforms are still more absorbing at 193 nm than the phenolic matrices are at 248nm, the PAG loading had to be lowered significantly in order to keep the overall absorbance of the resist down. This paper descibes the results of our systematic studies on understanding the reasons for observed differences in photoacid generating efficincy between 193 and 248nm chemically amplified resist systems. First the wavelength effect is studied by comparing the relative acid generating efficiency of onium type PAGs in a prototype 193nm and a DUV photoresist at both 193 nm and 248 nm exposure. Second, the photoacid generating efficiency for these PAGs at 238 nm is compared in both phenolic and non-phenolic based photoresists to probe resist polymer matrix effects. Third, these experiments were repeated while varying the PAG loading in order to probe whether there is an effect of PAG loading on acid generation efficiency. Lastly, by performing all of these studies on two different onium PAG classes (iodonium and sulfonium slats), the impact of the PAG chromophore on acid generation efficiency in both sensitized and unsensitized environments was probed. In all these studies, the C-parameter method is used to determine the quantum yield of photoacid generation. First the exposure wavelength was found to play a significant role in determining the acid generation efficiency of both PAGs, namely efficiency significantly decreases when switching exposure wavelength from 248 to 193nm. Second, it was also found that the change in the resist matrix polymer has a profound impact on the manner in which acid is generated: the phenolic matrix enables sensitized acid generation via electron transfer from the matrix to the PAG, whereas in the acrylate polymer only direct acid generation is observed. Due to the different oxidation potential of iodonium and sulfonium PAGs, the matrix effect impacts the photoacid generation efficiency of the two PAGs very differently. This is apparent in the observed change when going form the phenolic to the methacrylate matrix. Lastly, the presence of the sensitized channel is also responsible for the observed impact of PAG loading in the phenolic polymer, which is largely absent in the acrylate matrix.

Proceedings Article | 23 June 2000 Paper

Paper

Comparison of methods for acid quantification: impact of resist components on acid-generating efficiency

James Cameron, Leslie Fradkin, Kathryn Moore, Gerd Pohlers

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388302

KEYWORDS: Quantum efficiency, Calibration, Absorbance, Photolysis, Deep ultraviolet, Photons, Polymers, Chemically amplified resists, Semiconducting wafers, Data conversion

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Proceedings Article | 23 June 2000 Paper

Paper

Mechanistic similarities in the photochemistry of two classes of photoacid generators: a laser flash photolytic study

Chris Coenjarts, Fausto Ortica, Juan Scaiano, Huiyou Liu, Gerd Pohlers, James Cameron, Anthony Zampini

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388346

KEYWORDS: Absorption, Photolysis, Pulsed laser operation, Hydrogen, Quantum efficiency, Chemical species, Molecules, Photochemistry, Lamps, Quartz

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Proceedings Article | 11 June 1999 Paper

Paper

Impact of photoacid generator structure on DUV resist performance

James Cameron, Sheri Ablaza, Guangyu Xu, Wang Yueh

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350268

KEYWORDS: Lithography, Deep ultraviolet, Diffusion, Prototyping, Absorbance, Chromophores, Chemistry, Image resolution, Electroluminescence, Photoresist processing

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Proceedings Article | 11 June 1999 Paper

Paper

Exploratory approaches to the study of acid diffusion and acid loss from polymer films using absorption and fluorescence spectroscopy

Chris Coenjarts, James Cameron, Nicole Deschamps, David Hambly, Gerd Pohlers, Juan Scaiano, Roger Sinta, Susan Virdee, Anthony Zampini

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350157

KEYWORDS: Luminescence, Polymers, Diffusion, Polymer thin films, Absorption, Absorbance, Calibration, Chlorine, Fluorescence spectroscopy, Photolysis

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Proceedings Article | 11 June 1999 Paper

Paper

Methacrylate resists and antireflective coatings for 193-nm lithography

Gary Taylor, Peter Trefonas, Charles Szmanda, George Barclay, Robert Kavanagh, Robert Blacksmith, Lori Joesten, Michael Monaghan, Suzanne Coley, Zhibiao Mao, James Cameron, Ricky Hardy, Dana Gronbeck, S. Connolly

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350199

KEYWORDS: Etching, Lithography, Polymers, Antireflective coatings, Resistance, Plasmas, Silicon, Standards development, Photoresist processing, Deep ultraviolet

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Proceedings Article | 11 June 1999 Paper

Paper

Simple method for measuring acid generation quantum efficiency at 193 nm

Charles Szmanda, Robert Kavanagh, John Bohland, James Cameron, Peter Trefonas, Robert Blacksmith

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350274

KEYWORDS: Absorbance, Quantum efficiency, Polymers, Chemically amplified resists, Chemical analysis, Absorption, Statistical analysis, Contamination, Photons, Chemistry

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Proceedings Article | 29 June 1998 Paper

Paper

Development of DUV resist formulations with excellent performance on metal substrates

Martha Rajaratnam, James Cameron, Jacque Georger, Doris Kang, Gregory Prokopowicz, Roger Sinta, James Thackeray

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312468

KEYWORDS: Tin, Polymers, Etching, Metals, Deep ultraviolet, Resistance, Interfaces, Chemical analysis, Lithography, Photoresist materials

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Proceedings Article | 29 June 1998 Paper

Paper

Photoacid generation in chemically amplified resists: elucidation of structural effects of photoacid generators using new acid-sensitive dyes for monitoring acid generation

James Cameron, J. Michael Mori, Thomas Zydowsky, Doris Kang, Roger Sinta, Matthew King, Juan Scaiano, Gerd Pohlers, Susan Virdee, Terry Connolly

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312467

KEYWORDS: Lithography, Absorption, Deep ultraviolet, Polymers, Quantum efficiency, Semiconducting wafers, Polymer thin films, Chemically amplified resists, Rhodamine B, Absorbance

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Proceedings Article | 7 July 1997 Paper

Paper

Complex triarylsulfonium salts as photoacid generators for deep-UV microlithography: synthesis, identification, and lithographic characterization of key individual components

James Cameron, Timothy Adams, Arturo Orellana, Martha Rajaratnam, Roger Sinta

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275849

KEYWORDS: Deep ultraviolet, Lithography, Ultraviolet radiation, Optical lithography, Polymers, Sodium, Spectroscopy, Semiconducting wafers, Photoresist materials, Absorption

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Proceedings Article | 7 July 1997 Paper

Paper

Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance

Charles Szmanda, Jaclyn Yu, George Barclay, James Cameron, Robert Kavanagh, Robert Blacksmith, Peter Trefonas, Gary Taylor

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275836

KEYWORDS: Polymers, Etching, Lithography, Chemistry, Interfaces, Absorbance, Diffusion, Resistance, Solids, Liquids

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Proceedings Article | 7 July 1997 Paper

Paper

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, William Brunsvold, Fred Buehrer, Ronald DellaGuardia, David Dobuzinsky, Timothy Farrell, Hok Ho, Ahmad Katnani, Robin Keller, James Marsh, Paul Muller, Ronald Nunes, Hung Ng, James Oberschmidt, Michael Pike, Deborah Ryan, Tina Cotler-Wagner, Ron Schulz, Hiroshi Ito, Donald Hofer, Gregory Breyta, Debra Fenzel-Alexander, Gregory Wallraff, Juliann Opitz, James Thackeray, George Barclay, James Cameron, Tracy Lindsay, Michael Cronin, Matthew Moynihan, Sassan Nour, Jacque Georger, Mike Mori, Peter Hagerty, Roger Sinta, Thomas Zydowsky

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275830

KEYWORDS: Semiconducting wafers, Photoresist materials, Etching, Polymers, Resistance, Lithography, Silicon, Glasses, Annealing, Photoresist processing

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Proceedings Article | 14 June 1996 Paper

Paper

Characterization of Shipley's positive deep-UV experimental resists: deblocking studies

James Cameron, Arturo Orellana, Martha Rajaratnam, Roger Sinta

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241824

KEYWORDS: Deep ultraviolet, Diffusion, Optical spheres, Resist chemistry, Semiconducting wafers, Calibration, Molecules, Polymers, Absorbance, Photoresist processing

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Proceedings Article | 15 September 1993 Paper

Paper

Resist materials design: base-catalyzed chemical amplification

C. Grant Willson, James Cameron, Scott MacDonald, C. Niesert, Jean Frechet, M. Leung, Aaron Ackman

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154770

KEYWORDS: Polymers, Image processing, Carbon dioxide, Chemistry, Silicon, Deep ultraviolet, Photoresist materials, Photoresist processing, Lithography, Polymer thin films

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Showing 5 of 45 publications

Conference Committee Involvement (5)

Advances in Patterning Materials and Processes XLI

26 February 2024 | San Jose, California, United States

Advances in Patterning Materials and Processes XL

27 February 2023 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXIX

25 April 2022 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXVIII

22 February 2021 | Online Only, California, United States

Advances in Patterning Materials and Processes XXXVII

24 February 2020 | San Jose, California, United States

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