Paper
11 June 1999 Impact of photoacid generator structure on DUV resist performance
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Abstract
The structural influence of photoacid generators on DUV resists performance is investigated in both high and low activation energy resists system. The lithographic behaviors of the photoacid generator is considered in terms of the structure of the photogenerated acid and the light sensitive chromophore. First, the lithographic impact of the photogenerated acid is investigated in terms of acid strength and acid size in resists optimized for high and low temperature processing, respectively. Dissolution kinetics, contrast curve data and absorbance data are presented for a series of high and low activation energy resists in which the structure of the photogenerated acid is systematically varied. The results of these studies are discussed in terms of the photogenerated acid, emphasizing the impact of acid strength and size on lithographic performance and resists dissolution rate kinetics for each resists platform. Secondly, the structural influence of the light sensitive PAG chromophore is investigated by comparing the lithographic performance and dissolution rate kinetics are probed in terms of resist type and PAG structure.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James F. Cameron, Sheri L. Ablaza, Guangyu Xu, and Wang Yueh "Impact of photoacid generator structure on DUV resist performance", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350268
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CITATIONS
Cited by 4 scholarly publications and 2 patents.
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KEYWORDS
Lithography

Deep ultraviolet

Diffusion

Prototyping

Absorbance

Chromophores

Chemistry

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