Design considerations for chemically amplified EUV resist materials

Emad Aqad; ChoongBong Lee; Suzanne M. Coley; Ke Yang; Li Cui; Manibarsha Goswami; Bhooshan C. Popere; Tomas Marangoni; James F. Cameron; James Thackeray

doi:10.1117/12.2583642

22 February 2021 Design considerations for chemically amplified EUV resist materials

Emad Aqad, ChoongBong Lee, Suzanne M. Coley, Ke Yang, Li Cui, Manibarsha Goswami, Bhooshan C. Popere, Tomas Marangoni, James F. Cameron, James Thackeray

Author Affiliations +

Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090I (2021) https://doi.org/10.1117/12.2583642
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

The development of Chemically Amplified Resists (CARs) for Extreme Ultra-Violet Lithography (EUVL) requires unique molecular and macromolecular design considerations. The combination of photon-induced variation effect coupled with material and processing variabilities makes stochastic consequences in EUV resist significantly more severe than that in ArF resist. Among the other factors, conversion of the scarce number of absorbed EUV photons into imaging events is directly modulated by acid generation quantum yield. In this study, we measure the EUV acid generation efficiency of different Photoacid Generators (PAGs). Our results show that in addition to PAG electronic properties, other structural-driven PAG properties can have a significant impact on resist sensitivity. In a complementary part of this study, we have measured PAG acid generation efficiency under EUV exposure in newly designed polymer matrixes. Such polymers comprise high absorption EUV elements and EUV-specific sensitizers. Insights into the effect of the polymer matrix on EUV acid generation quantum yield are presented.

Conference Presentation

Citation Download Citation

Emad Aqad, ChoongBong Lee, Suzanne M. Coley, Ke Yang, Li Cui, Manibarsha Goswami, Bhooshan C. Popere, Tomas Marangoni, James F. Cameron, and James Thackeray "Design considerations for chemically amplified EUV resist materials", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090I (22 February 2021); https://doi.org/10.1117/12.2583642

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available