Dr. Yuli Vladimirsky
Senior Design Engineer and Scientist
SPIE Involvement:
Author | Instructor
Publications (29)

Proceedings Article | 15 March 2006 Paper
Lev Ryzhikov, Yuli Vladimirsky
Proceedings Volume 6154, 61542I (2006) https://doi.org/10.1117/12.659107
KEYWORDS: Reticles, Polarization, Lithium, Relays, Optical components, Laser systems engineering, Laser optics, Optical lithography, Coherence (optics), Polarizers

Proceedings Article | 20 May 2004 Paper
Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.529642
KEYWORDS: Photomasks, X-rays, Near field, X-ray lithography, Printing, Semiconducting wafers, Lithography, Synchrotrons, Mirrors, Collimation

Proceedings Article | 16 June 2003 Paper
Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484989
KEYWORDS: Photomasks, Near field, Semiconducting wafers, Printing, Lithography, Near field diffraction, X-ray lithography, X-rays, Physics, Manufacturing

Proceedings Article | 2 November 2000 Paper
I. C. Edmond Turcu, Harry Rieger, Yuli Vladimirsky, Robert Grygier, Michael Powers, Joe Naunguyan, S. Campeau, G. French, Richard Forber, Richard Foster
Proceedings Volume 4144, (2000) https://doi.org/10.1117/12.405882
KEYWORDS: X-rays, X-ray sources, Plasma, Copper, X-ray lithography, Pulsed laser operation, Laser systems engineering, X-ray lasers, Helium, Picosecond phenomena

Proceedings Article | 21 July 2000 Paper
Lei Yang, Mumit Khan, James Taylor, Yuli Vladimirsky, Niru Dandekar
Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390092
KEYWORDS: Photomasks, Phase shifts, X-rays, Phase shifting, X-ray lithography, Lithography, X-ray sources, Critical dimension metrology, Gold, Silicon carbide

Showing 5 of 29 publications
Proceedings Volume Editor (5)

SPIE Conference Volume | 11 August 2000

SPIE Conference Volume | 3 September 1999

SPIE Conference Volume | 25 June 1999

SPIE Conference Volume | 1 September 1998

SPIE Conference Volume | 5 June 1998

Conference Committee Involvement (7)
Nanoengineering: Fabrication, Properties, Optics, and Devices III
15 August 2006 | San Diego, California, United States
Materials and Device Characterization in Micromachining III
18 September 2000 | Santa Clara, CA, United States
Design and Microfabrication of Novel X-Ray Optics
3 August 2000 | San Diego, CA, United States
Materials and Device Characterization in Micromachining II
20 September 1999 | Santa Clara, CA, United States
Emerging Lithographic Technologies III
15 March 1999 | Santa Clara, CA, United States
Showing 5 of 7 Conference Committees
Course Instructor
SC615: 157-nm DUV Lithography
This course presents an overview of the DUV lithography utilizing 157-nm light. The course gives an insight of the status of this technology, its limitations, and its applicability to several generations of IC's. A brief review of the physical principles of optical lithography is presented, and components of the manufacturing system are discussed in some detail. Topics to be covered include: 157-nm lithography system requirements; lithography tool modules such as laser illumination system (including source, beam delivery module, and module forming illumination of desired type and spatial coherence), projection optics system; reticles, pellicles, nitrogen ambience and resists. The discussion addresses specificity (birefringence and absorption) of materials used in 157-nm lithography systems: Calcium Fluoride (CaF2) for optical elements and fluorine doped fused silica for reticle substrates and pellicles. Particular emphasis is made on substantial absorption of materials in 157-nm wavelength region and related manufacturing aspects such as fluorinated resists and necessity of nitrogen purge. The existing (and projected) infrastructure, in terms of tool availability is explained. Recent developments in 157-nm technology, and its printing capabilities down to 45 nm are described.
SC099: X-ray Lithography
This course presents an overview of the x-ray lithography (XRL) technology. The course provides an understanding of the status of the technology, its basis and limitations, and its applicability to several generations of IC's. After a brief review of the physical principles, the components of the manufacturing system are discussed in detail. Topics to be covered include: sources (with emphasis on synchrotrons), beamlines, masks, aligners, and resists. The discussion addresses manufacturing aspects, exposure control, and sources of overlay error. Particular emphasis is on the x-ray mask and the approach to optimal mask design. The existing (and projected) infrastructure, in terms of tools availability in the US and Japan is explained. The perceived limits and challenges of X-ray technology, recent developments, and its printing capabilities down to 25 nm are described.
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