Mr. Toru Komizo Profile

Toru Komizo

at TOPPAN Inc

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 12 June 2018 Paper

EUV mask with advanced hybrid black border suppressing EUV and DUV OOB light reflection

Genta Watanabe, Norihito Fukugami, Toru Komizo, Yutaka Kodera, Toshio Konishi

Proceedings Volume 10807, 108070N (2018) https://doi.org/10.1117/12.2501999

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Deep ultraviolet, Semiconducting wafers, Reflection, Optical testing, Extreme ultraviolet lithography, Manufacturing, Atomic force microscopy

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EUV lithography is expected to be the most promising technology for semiconductor device manufacturing of the 7nm node and beyond. The EUV mask is a key element in the lithographic scanner optical path. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV light reflectance (<0.05%) have been proposed; such an image border is referred to as a black border (BB). In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border. However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD change was caused by DUV Out Of Band (OOB) light which is emitted from the EUV light source. In our previous study, a new types of multilayer etched BB called ‘Hybrid Black Border’ (HBB) had been developed and showed a good potential for DUV light suppression. OOB light reflection on HBB is ~3x lower than that of normal BB. Imaging performance was also demonstrated on NXE:3300 scanner system for N10 imaging structures of 16nm dense lines and 20nm isolated spaces. These results were compared to the imaging results obtained for a mask with the normal BB and 3x improvement was achieved; less than 0.2 nm CD changes were observed in the corners of the die. However, OOB light reflectance suppression was still not enough in short wavelength. In this study, we focused on OOB light reflectance reduction in short wavelength, and we developed a new HBB called ‘Advanced HBB’. We measured the OOB light reflectance of Advanced HBB by synchrotron radiation facility at PTB (Physikalisch- Technische Bundesanstalt, Germany). These results were compared to the results obtained from previous HBB. Then Advanced HBB achieved over 50% OOB light reflectance improvement in average wavelength 100nm to 270nm. Imaging performance also simulated in the edges and corners of the die. The CD-drop is expected to be more improved for Advanced HBB than previous HBB. As a result, it is expected the implementation of the Advanced HBB will help to mitigate the effects of possible increases of OOB light in the future higher power EUV sources.

Proceedings Article | 10 May 2016 Paper

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

Shin Ito, Yutaka Kodera, Norihito Fukugami, Toru Komizo, Shingo Maruyama, Genta Watanabe, Itaru Yoshida, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9984, 99840O (2016) https://doi.org/10.1117/12.2242624

KEYWORDS: Extreme ultraviolet, Photomasks, Deep ultraviolet, Extreme ultraviolet lithography, Reflectivity, Semiconducting wafers, Neodymium, Reflection, Ultraviolet radiation, Manufacturing

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EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called ‘Hybrid Black Border’ (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Proceedings Article | 18 March 2016 Paper

Novel EUV mask black border and its impact on wafer imaging

Yutaka Kodera, Norihito Fukugami, Toru Komizo, Genta Watanabe, Shin Ito, Itaru Yoshida, Shingo Maruyama, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9776, 977615 (2016) https://doi.org/10.1117/12.2218942

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Deep ultraviolet, Imaging systems, Semiconducting wafers, Reflectivity, Printing, Semiconductor manufacturing, Reflection, Manufacturing

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Proceedings Article | 17 October 2014 Paper

Characterization of a new polarity switching negative tone e-beam resist for 14nm and 10nm logic node mask fabrication and beyond

T. Faure, A. Zweber, L. Bozano, M. Sanchez, R. Sooriyakumaran, L. Sundberg, Y. Sakamoto, S. Nash, M. Kagawa, T. Isogawa, T. Senna, M. Tanabe, T. Komizo, I. Yoshida, K. Masunaga, S. Watanabe, Y. Kawai, J. Malenfant, R. Bowley

Proceedings Volume 9235, 92350P (2014) https://doi.org/10.1117/12.2069031

KEYWORDS: Etching, Opacity, Switching, SRAF, Dry etching, Critical dimension metrology, Logic, Scanning electron microscopy, Manufacturing, Image resolution

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Proceedings Article | 9 September 2013 Paper

Defects on high-resolution negative-tone resist: "The revenge of the blobs"

M. Sanchez, L. Sundberg, L. Bozano, R. Sooriyakumaran, D. Sanders, T. Senna, M. Tanabe, T. Komizo, I. Yoshida, A. Zweber

Proceedings Volume 8880, 88800V (2013) https://doi.org/10.1117/12.2028753

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Switching, Chromium, Switches, Silicon, Ultraviolet radiation, Lamps, Optical microscopes

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Proceedings Article | 25 September 2010 Paper

Two complementary methods to characterize long range proximity effects due to develop loading

Linda Sundberg, Greg Wallraff, Alexander Friz, Blake Davis, Amy Zweber, Robert Lovchik, Emmanuel Delamarche, Tasuku Senna, Toru Komizo, William Hinsberg

Proceedings Volume 7823, 78230G (2010) https://doi.org/10.1117/12.864336

KEYWORDS: Critical dimension metrology, Standards development, Electron beam lithography, Lithography, Semiconducting wafers, Deep ultraviolet, Photomasks, Optical lithography, Photoresist processing, Photography

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Proceedings Article | 25 September 2010 Paper

Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 7823, 78230J (2010) https://doi.org/10.1117/12.864130

KEYWORDS: Photomasks, Etching, Binary data, Opacity, Inspection, Image processing, Photoresist processing, Dry etching, Mask making, Thin films

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Proceedings Article | 23 September 2009 Paper

Post exposure bake tuning for 32nm photomasks

A. Zweber, T. Komizo, J. Levin, J. Whang, S. Nemoto, S. Kondo

Proceedings Volume 7488, 74880J (2009) https://doi.org/10.1117/12.830123

KEYWORDS: Line edge roughness, Temperature metrology, Photomasks, Etching, Diffusion, Scatterometry, Glasses, Photoresist processing, Scanning electron microscopy, Scatter measurement

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Proceedings Article | 11 May 2009 Paper

Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication

Satoru Nemoto, Thomas Faure, Richard Wistrom, Shaun Crawford, Gary Reid, Peter Bartlau, Toru Komizo, Amy Zweber

Proceedings Volume 7379, 737907 (2009) https://doi.org/10.1117/12.824248

KEYWORDS: Etching, Photomasks, Opacity, Critical dimension metrology, Dry etching, Binary data, Photoresist processing, Mask making, Standards development, Quartz

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Proceedings Article | 11 May 2009 Paper

Investigation of the development process for high-precision patterning

Junichi Watanabe, Tsukasa Yamazaki, Masahito Tanabe, Toru Komizo, Amy Zweber, Adam Smith

Proceedings Volume 7379, 73790B (2009) https://doi.org/10.1117/12.824252

KEYWORDS: Standards development, SRAF, Optical lithography, Photomasks, Manufacturing, Resolution enhancement technologies, Semiconductors, Photomask technology, Photoresist processing, Critical dimension metrology

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Proceedings Article | 1 April 2009 Paper

Criteria for success in e-beam resists

A. E. Zweber, T. Komizo, J. Levin, Z. Benes

Proceedings Volume 7273, 72730K (2009) https://doi.org/10.1117/12.816048

KEYWORDS: Photoresist materials, Line edge roughness, Photomasks, Etching, Photoresist developing, Chromium, Resistance, Interfaces, Thin film coatings, Metrology

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Proceedings Article | 17 October 2008 Paper

Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication

Thomas Faure, Emily Gallagher, Michael Hibbs, Louis Kindt, Ken Racette, Richard Wistrom, Amy Zweber, Alfred Wagner, Yasutaka Kikuchi, Toru Komizo, Satoru Nemoto

Proceedings Volume 7122, 712209 (2008) https://doi.org/10.1117/12.801950

KEYWORDS: Photomasks, Binary data, Opacity, Chromium, Etching, Photoresist processing, Critical dimension metrology, Quartz, Phase shifts, Mask making

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Proceedings Article | 17 October 2008 Paper

Integrating Cr and MoSi etch for optimal photomask critical dimension uniformity and phase uniformity

Richard Wistrom, Toru Komizo, Satoru Nemoto, A. Gary Reid

Proceedings Volume 7122, 71220F (2008) https://doi.org/10.1117/12.801570

KEYWORDS: Etching, Chromium, Photomasks, Plasma etching, Quartz, Phase shift keying, Phase shifts, Plasma, Photoresist materials, Critical dimension metrology

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Proceedings Article | 30 October 2007 Paper

Characterizing photomask etch processes by phase component analysis (PCA)

Richard Wistrom, Toru Komizo, Michael Hibbs, Gary Reid

Proceedings Volume 6730, 673007 (2007) https://doi.org/10.1117/12.746421

KEYWORDS: Etching, Quartz, Photomasks, Chromium, Phase measurement, Principal component analysis, Diagnostics, Manufacturing, Molybdenum, Phase shifts

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Proceedings Article | 30 October 2007 Paper

Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase-shift mask manufacturing

Thomas Faure, Emily Gallagher, Louis Kindt, Steven Nash, Ken Racette, Richard Wistrom, Toru Komizo, Yasutaka Kikuchi, Satoru Nemoto, Yushin Sasaki, Atsushi Kominato, Toshiyuki Suzuki

Proceedings Volume 6730, 67300C (2007) https://doi.org/10.1117/12.748664

KEYWORDS: Photomasks, Etching, Distortion, Manufacturing, Line edge roughness, Photoresist processing, Dry etching, Image processing, Transmittance, Opacity

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Proceedings Article | 20 October 2006 Paper

Imaging behavior of high-transmission attenuating phase-shift mask films

Michael Hibbs, Satoru Nemoto, Toru Komizo

Proceedings Volume 6349, 63491A (2006) https://doi.org/10.1117/12.686231

KEYWORDS: Attenuators, Phase shifts, Phase shifting, 3D modeling, Diffraction, Polarization, Opacity, Refractive index, Phase measurement, Silica

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Proceedings Article | 20 May 2006 Paper

Evaluating films for high transmission attenuated phase shift masks

Satoru Nemoto, Toru Komizo, Yasutaka Kikuchi, Emily Gallagher, Jason Benz, Michael Hibbs, Takashi Haraguchi

Proceedings Volume 6283, 628322 (2006) https://doi.org/10.1117/12.681767

KEYWORDS: Etching, Reflection, Quartz, Photomasks, Phase shifts, Phase measurement, Inspection, Surface roughness, Scanning electron microscopy, Radium

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Proceedings Article | 28 June 2005 Paper

Evaluation of quartz dry etching profile for the PSM lithography performance

Toru Komizo, Satoru Nemoto, Yosuke Kojima, Takashi Ohshima, Takashi Yoshii, Toshio Konishi, Kazuaki Chiba, Yasutaka Kikuchi, Masao Otaki, Yoshimitsu Okuda

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617440

KEYWORDS: Quartz, Photomasks, Lithography, Etching, Semiconducting wafers, Dry etching, Phase shifts, Chromium, Scanning electron microscopy, Electromagnetism

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Proceedings Article | 6 December 2004 Paper

Phase defect printability and mask inspection capability of 65-nm technology node Alt-PSM for ArF lithography (Photomask Japan Best Paper)

Shinji Akima, Tooru Komizo, Saburo Kawakita, Yutaka Kodera, Tsuyoshi Narita, Kiichi Ishikawa

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.580003

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Defect detection, Visibility, Lithography, Scanning electron microscopy, Atomic force microscopy, Phase shift keying, Image enhancement

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Proceedings Article | 20 August 2004 Paper

Study of alternating phase shift mask structures for ArF lithography

Yosuke Kojima, Toshio Konishi, Jun Sasaki, Keishi Tanaka, Toru Komizo, Motohiko Morita, Masanori Shirasaki, Takashi Ohshima, Hiroyuki Takahashi, Kazuaki Chiba, Masao Otaki, Yoshimitsu Okuda

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557801

KEYWORDS: Photomasks, Semiconducting wafers, Chromium, Phase shifts, Lithography, Nanoimprint lithography, Printing, Logic devices, Light scattering, Semiconductors

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Proceedings Article | 17 December 2003 Paper

Study of alternating phase-shift mask structure for 65-nm node devices

Toshio Konishi, Tooru Komizo, Hiroyuki Takahashi, Motohiko Morita, Takashi Ohshima, Kazuaki Chiba, Yosuke Kojima, Jun Sasaki, Keishi Tanaka, Masao Otaki, Yoshimitsu Okuda

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.522180

KEYWORDS: Photomasks, Chromium, Semiconducting wafers, Reticles, Phase shifts, 193nm lithography, Mask making, Semiconductors, Analytical research, Printing

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Proceedings Article | 1 August 2002 Paper

Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment

Ken Ozawa, Tooru Komizo, Hidetoshi Ohnuma

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476977

KEYWORDS: Photomasks, Phase shifts, Critical dimension metrology, Quartz, Semiconducting wafers, Dry etching, Phase measurement, Photoresist processing, Wet etching, Optical lithography

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Proceedings Article | 30 July 2002 Paper

Defect printability of alternating phase-shift mask: a critical comparison of simulation and experiment

Ken Ozawa, Tooru Komizo, Koji Kikuchi, Hidetoshi Ohnuma, Hiroichi Kawahira

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474479

KEYWORDS: Photomasks, Optical lithography, Chromium, Quartz, Critical dimension metrology, Fiber reinforced polymers, Phase shifts

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Proceedings Article | 11 March 2002 Paper

Quantitative evaluation of focused ion-beam repair for quartz bump defect of alternating phase-shift masks

Daichi Kakuta, Ichiro Kagami, Tooru Komizo, Hidetoshi Ohnuma

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458358

KEYWORDS: Quartz, Etching, Photomasks, Visibility, Ion beams, Transmittance, Imaging systems, Lithography, Gallium, Semiconducting wafers

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Proceedings Article | 5 September 2001 Paper

Optimization of fabrication process for dual-trench-type alternating PSM

Tooru Komizo, Ichiro Kagami, Daichi Kakuta, Hiroichi Kawahira

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438341

KEYWORDS: Etching, Quartz, Photomasks, Reactive ion etching, Photoresist processing, Chromium, Lithography, Phase shifts, Electron beam lithography, Process control

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Proceedings Article | 5 September 2001 Paper

Focused ion beam repair for quartz bump defect of alternating phase-shift masks

Ichiro Kagami, Daichi Kakuta, Tooru Komizo, Hiroichi Kawahira

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438391

KEYWORDS: Quartz, Etching, Photomasks, Chromium, Software development, Ion beams, Atomic force microscopy, Visibility, Phase shifts, Lithography

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Showing 5 of 26 publications

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