Dr. Amy E. Zweber Profile

Dr. Amy E. Zweber

at GLOBALFOUNDRIES Inc

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 4 October 2016 Paper

Paper

7-nm e-beam resist sensitivity characterization

Amy Zweber, Yusuke Toda, Yoshifumi Sakamoto, Thomas Faure, Jed Rankin, Steven Nash, Masayuki Kagawa, Michael Fahrenkopf, Takeshi Isogawa, Richard Wistrom

Proceedings Volume 9985, 99851J (2016) https://doi.org/10.1117/12.2243683

KEYWORDS: Photomasks, Line edge roughness, Electron beam lithography, Electrons, SRAF, Extreme ultraviolet, Image resolution, EUV optics, Inspection, Manufacturing

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Proceedings Article | 10 May 2016 Paper

Paper

Development of a new high transmission phase shift mask technology for 10 nm logic node

Thomas Faure, Yoshifumi Sakamoto, Yusuke Toda, Karen Badger, Kazunori Seki, Mark Lawliss, Takeshi Isogawa, Amy Zweber, Masayuki Kagawa, Richard Wistrom, Yongan Xu, Granger Lobb, Ramya Viswanathan, Lin Hu, Yukio Inazuki, Kazuhiro Nishikawa

Proceedings Volume 9984, 998402 (2016) https://doi.org/10.1117/12.2241480

KEYWORDS: Photomasks, Phase shifts, Logic, Lithography, Chromium, Inspection, Opacity, SRAF, Etching, Attenuators

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Proceedings Article | 17 October 2014 Paper

Paper

Characterization of a new polarity switching negative tone e-beam resist for 14nm and 10nm logic node mask fabrication and beyond

T. Faure, A. Zweber, L. Bozano, M. Sanchez, R. Sooriyakumaran, L. Sundberg, Y. Sakamoto, S. Nash, M. Kagawa, T. Isogawa, T. Senna, M. Tanabe, T. Komizo, I. Yoshida, K. Masunaga, S. Watanabe, Y. Kawai, J. Malenfant, R. Bowley

Proceedings Volume 9235, 92350P (2014) https://doi.org/10.1117/12.2069031

KEYWORDS: Etching, Opacity, Switching, SRAF, Dry etching, Critical dimension metrology, Logic, Scanning electron microscopy, Manufacturing, Image resolution

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Proceedings Article | 1 October 2013 Paper

Paper

Two-dimensional mask effects at the 14 nm logic node

A. Zweber, A. McGuire, M. Hibbs, S. Nash, K. Ballman, T. Faure, J. Rankin, T. Isogawa, T. Senna, Y. Negishi, M. Miller, S. Barai, D. Dechene

Proceedings Volume 8880, 88800P (2013) https://doi.org/10.1117/12.2028909

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Data modeling, Logic, Chromium, Lithography, SRAF, Metrology, Immersion lithography

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Proceedings Article | 9 September 2013 Paper

Paper

Defects on high-resolution negative-tone resist: "The revenge of the blobs"

M. Sanchez, L. Sundberg, L. Bozano, R. Sooriyakumaran, D. Sanders, T. Senna, M. Tanabe, T. Komizo, I. Yoshida, A. Zweber

Proceedings Volume 8880, 88800V (2013) https://doi.org/10.1117/12.2028753

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Switching, Chromium, Switches, Silicon, Ultraviolet radiation, Lamps, Optical microscopes

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Proceedings Article | 8 November 2012 Paper

Paper

Impact of EUV photomask line-edge roughness on wafer prints

Zhengqing John Qi, Emily Gallagher, Yoshiyuki Negishi, Gregory McIntyre, Amy Zweber, Tasuku Senna, Satoshi Akutagawa, Toshio Konishi

Proceedings Volume 8522, 85222H (2012) https://doi.org/10.1117/12.976855

KEYWORDS: Photomasks, Line edge roughness, Semiconducting wafers, Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Lithographic illumination, Photoresist materials, Linear filtering

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Proceedings Article | 8 November 2012 Paper

Paper

Study and comparison of negative tone resists for fabrication of bright field masks for 14nm node

Amy Zweber, Tom Faure, Anne McGuire, Linda Sundberg, Ratnam Sooriyakumaran, Martha Sanchez, Luisa Bozano, Tasuku Senna, Yuki Fujita, Yoshiyuki Negishi, Masahito Tanabe, Takahiro Kaneko

Proceedings Volume 8522, 85220S (2012) https://doi.org/10.1117/12.976878

KEYWORDS: Photomasks, Line edge roughness, SRAF, Manufacturing, Opacity, Critical dimension metrology, Phase shifts, Binary data, Photoresist processing, Electron beam lithography

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Proceedings Article | 23 March 2012 Paper

Paper

EUV mask line edge roughness

Amy Zweber, Emily Gallagher, Martha Sanchez, Tasuku Senna, Yoshiyuki Negishi, Toshio Konishi, Anne McGuire, Luisa Bozano, Phil Brock, Hoa Truong

Proceedings Volume 8322, 83220O (2012) https://doi.org/10.1117/12.916291

KEYWORDS: Line edge roughness, Photomasks, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Edge detection, Image filtering, EUV optics, Pixel resolution, Line width roughness

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Proceedings Article | 25 September 2010 Paper

Paper

Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 7823, 78230J (2010) https://doi.org/10.1117/12.864130

KEYWORDS: Photomasks, Etching, Binary data, Opacity, Inspection, Image processing, Photoresist processing, Dry etching, Mask making, Thin films

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Proceedings Article | 25 September 2010 Paper

Paper

Two complementary methods to characterize long range proximity effects due to develop loading

Linda Sundberg, Greg Wallraff, Alexander Friz, Blake Davis, Amy Zweber, Robert Lovchik, Emmanuel Delamarche, Tasuku Senna, Toru Komizo, William Hinsberg

Proceedings Volume 7823, 78230G (2010) https://doi.org/10.1117/12.864336

KEYWORDS: Critical dimension metrology, Standards development, Electron beam lithography, Lithography, Semiconducting wafers, Deep ultraviolet, Photomasks, Optical lithography, Photoresist processing, Photography

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Proceedings Article | 30 March 2010 Paper

Paper

A method to characterize pattern density effects: chemical flare and develop loading

Linda Sundberg, Gregory Wallraff, Alexander Friz, Amy Zweber, Zdenek Benes, Robert Lovchik, Emmanuel Delamarche, William Hinsberg

Proceedings Volume 7639, 76392S (2010) https://doi.org/10.1117/12.849145

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Liquids, Silicon, Ions, Reactive ion etching, Wafer-level optics, Plasma, Photoresist developing, Optical lithography

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Proceedings Article | 23 September 2009 Paper

Paper

Post exposure bake tuning for 32nm photomasks

A. Zweber, T. Komizo, J. Levin, J. Whang, S. Nemoto, S. Kondo

Proceedings Volume 7488, 74880J (2009) https://doi.org/10.1117/12.830123

KEYWORDS: Line edge roughness, Temperature metrology, Photomasks, Etching, Diffusion, Scatterometry, Glasses, Photoresist processing, Scanning electron microscopy, Scatter measurement

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Proceedings Article | 11 May 2009 Paper

Paper

Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication

Satoru Nemoto, Thomas Faure, Richard Wistrom, Shaun Crawford, Gary Reid, Peter Bartlau, Toru Komizo, Amy Zweber

Proceedings Volume 7379, 737907 (2009) https://doi.org/10.1117/12.824248

KEYWORDS: Etching, Photomasks, Opacity, Critical dimension metrology, Dry etching, Binary data, Photoresist processing, Mask making, Standards development, Quartz

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Proceedings Article | 11 May 2009 Paper

Paper

Investigation of the development process for high-precision patterning

Junichi Watanabe, Tsukasa Yamazaki, Masahito Tanabe, Toru Komizo, Amy Zweber, Adam Smith

Proceedings Volume 7379, 73790B (2009) https://doi.org/10.1117/12.824252

KEYWORDS: Standards development, SRAF, Optical lithography, Photomasks, Manufacturing, Resolution enhancement technologies, Semiconductors, Photomask technology, Photoresist processing, Critical dimension metrology

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Proceedings Article | 1 April 2009 Paper

Paper

Criteria for success in e-beam resists

A. E. Zweber, T. Komizo, J. Levin, Z. Benes

Proceedings Volume 7273, 72730K (2009) https://doi.org/10.1117/12.816048

KEYWORDS: Photoresist materials, Line edge roughness, Photomasks, Etching, Photoresist developing, Chromium, Resistance, Interfaces, Thin film coatings, Metrology

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Proceedings Article | 17 October 2008 Paper

Paper

Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication

Thomas Faure, Emily Gallagher, Michael Hibbs, Louis Kindt, Ken Racette, Richard Wistrom, Amy Zweber, Alfred Wagner, Yasutaka Kikuchi, Toru Komizo, Satoru Nemoto

Proceedings Volume 7122, 712209 (2008) https://doi.org/10.1117/12.801950

KEYWORDS: Photomasks, Binary data, Opacity, Chromium, Etching, Photoresist processing, Critical dimension metrology, Quartz, Phase shifts, Mask making

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Proceedings Article | 23 March 2007 Paper

Paper

Photoresist dissolution into a CO2 compatible salt and CO2 solution: Investigation of Processing Conditions

Amy Zweber, Mark Wagner, Ruben Carbonell

Proceedings Volume 6519, 651948 (2007) https://doi.org/10.1117/12.712093

KEYWORDS: Photoresist materials, Head-mounted displays, Photoresist developing, Coating, Semiconducting wafers, Atomic force microscopy, Adhesives, Crystals, Carbon dioxide, Standards development

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Proceedings Article | 11 April 2006 Paper

Paper

Development of EUV resists in homogenous CO₂ solutions using CO₂ compatible salts (CCS): a kinetic view of dissolution of conventional resists in supercritical CO₂

James DeYoung, Mark Wagner, Chris Harbinson, Merrick Miles, Amy Zweber, Ruben Carbonell

Proceedings Volume 6153, 615345 (2006) https://doi.org/10.1117/12.655881

KEYWORDS: Photoresist materials, Photoresist developing, Standards development, Semiconducting wafers, Polymers, Crystals, Quartz, Extreme ultraviolet, Photoresist processing, Extreme ultraviolet lithography

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Proceedings Article | 29 March 2006 Paper

Paper

Monitoring photoresist dissolution in supercritical carbon dioxide using a quartz crystal microbalance

Amy Zweber, Ruben Carbonell

Proceedings Volume 6153, 61534C (2006) https://doi.org/10.1117/12.655659

KEYWORDS: Photoresist materials, Crystals, Quartz, Photoresist developing, Standards development, Absorption, Extreme ultraviolet lithography, Temperature metrology, Image processing, Silica

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Showing 5 of 19 publications

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