Mr. Toshio Konishi Profile

Toshio Konishi

Manager at Toppan Photomask Co., Ltd.

SPIE Involvement:

Conference Program Committee | Author

Publications (21)

Proceedings Article | 12 October 2018 Presentation

Minimizing tone reversal during 19x nm mask inspection: PMJ18 Best Paper (Conference Presentation)

Masashi Yonetani, Kazunori Seki, Karen Badger, Anka Birnstein, Jan Heumann, Takeshi Isogawa, Toshio Konishi, Yutaka Kodera

Proceedings Volume 10810, 1081007 (2018) https://doi.org/10.1117/12.2503808

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, EUV optics, Extreme ultraviolet lithography, Lithography, Semiconducting wafers, Wafer-level optics, Defect detection, Optical inspection

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Proceedings Article | 12 June 2018 Paper

EUV mask with advanced hybrid black border suppressing EUV and DUV OOB light reflection

Genta Watanabe, Norihito Fukugami, Toru Komizo, Yutaka Kodera, Toshio Konishi

Proceedings Volume 10807, 108070N (2018) https://doi.org/10.1117/12.2501999

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Deep ultraviolet, Semiconducting wafers, Reflection, Optical testing, Extreme ultraviolet lithography, Manufacturing, Atomic force microscopy

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EUV lithography is expected to be the most promising technology for semiconductor device manufacturing of the 7nm node and beyond. The EUV mask is a key element in the lithographic scanner optical path. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV light reflectance (<0.05%) have been proposed; such an image border is referred to as a black border (BB). In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border. However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD change was caused by DUV Out Of Band (OOB) light which is emitted from the EUV light source. In our previous study, a new types of multilayer etched BB called ‘Hybrid Black Border’ (HBB) had been developed and showed a good potential for DUV light suppression. OOB light reflection on HBB is ~3x lower than that of normal BB. Imaging performance was also demonstrated on NXE:3300 scanner system for N10 imaging structures of 16nm dense lines and 20nm isolated spaces. These results were compared to the imaging results obtained for a mask with the normal BB and 3x improvement was achieved; less than 0.2 nm CD changes were observed in the corners of the die. However, OOB light reflectance suppression was still not enough in short wavelength. In this study, we focused on OOB light reflectance reduction in short wavelength, and we developed a new HBB called ‘Advanced HBB’. We measured the OOB light reflectance of Advanced HBB by synchrotron radiation facility at PTB (Physikalisch- Technische Bundesanstalt, Germany). These results were compared to the results obtained from previous HBB. Then Advanced HBB achieved over 50% OOB light reflectance improvement in average wavelength 100nm to 270nm. Imaging performance also simulated in the edges and corners of the die. The CD-drop is expected to be more improved for Advanced HBB than previous HBB. As a result, it is expected the implementation of the Advanced HBB will help to mitigate the effects of possible increases of OOB light in the future higher power EUV sources.

Proceedings Article | 12 June 2018 Paper

Minimizing "Tone Reversal" during 19x nm mask inspection

Kazunori Seki, Karen Badger, Masashi Yonetani, Anka Birnstein, Jan Heumann, Takeshi Isogawa, Toshio Konishi, Yutaka Kodera

Proceedings Volume 10807, 108070D (2018) https://doi.org/10.1117/12.2502006

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Polarization, Opacity, Defect detection, EUV optics, Deep ultraviolet, Defect inspection, Critical dimension metrology

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Proceedings Article | 10 May 2016 Paper

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

Shin Ito, Yutaka Kodera, Norihito Fukugami, Toru Komizo, Shingo Maruyama, Genta Watanabe, Itaru Yoshida, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9984, 99840O (2016) https://doi.org/10.1117/12.2242624

KEYWORDS: Extreme ultraviolet, Photomasks, Deep ultraviolet, Extreme ultraviolet lithography, Reflectivity, Semiconducting wafers, Neodymium, Reflection, Ultraviolet radiation, Manufacturing

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EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called ‘Hybrid Black Border’ (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Proceedings Article | 18 March 2016 Paper

Novel EUV mask black border and its impact on wafer imaging

Yutaka Kodera, Norihito Fukugami, Toru Komizo, Genta Watanabe, Shin Ito, Itaru Yoshida, Shingo Maruyama, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9776, 977615 (2016) https://doi.org/10.1117/12.2218942

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Deep ultraviolet, Imaging systems, Semiconducting wafers, Reflectivity, Printing, Semiconductor manufacturing, Reflection, Manufacturing

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Proceedings Article | 28 July 2014 Paper

Screening EUV mask absorbers for defect repair

Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Emily Gallagher, Shinji Akima, Toshio Konishi

Proceedings Volume 9256, 92560N (2014) https://doi.org/10.1117/12.2070251

KEYWORDS: Etching, Extreme ultraviolet, Lawrencium, Photomasks, Semiconducting wafers, Microscopes, Critical dimension metrology, Bridges, Electron beams, Reflectivity

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Proceedings Article | 20 September 2013 Paper

Reflecting on inspectability and wafer printability of multiple EUV mask absorbers

Kazunori Seki, Karen Badger, Emily Gallagher, Gregory McIntyre, Toshio Konishi, Yutaka Kodera, Satoshi Takahashi, Vincent Redding

Proceedings Volume 8880, 88800S (2013) https://doi.org/10.1117/12.2027054

KEYWORDS: Inspection, Extreme ultraviolet, Lawrencium, Semiconducting wafers, Photomasks, Reflectivity, Wafer inspection, Defect detection, Opacity, Mask making

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Proceedings Article | 28 June 2013 Paper

Evaluation of non-actinic EUV mask inspection and defect printability on multiple EUV mask absorbers

Karen Badger, Emily Gallagher, Kazunori Seki, Gregory McIntyre, Toshio Konishi, Yutaka Kodera, Vincent Redding

Proceedings Volume 8701, 870114 (2013) https://doi.org/10.1117/12.2029882

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Extreme ultraviolet, Opacity, Defect inspection, Polarization, Signal detection, Extreme ultraviolet lithography, Defect detection

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Proceedings Article | 28 June 2013 Paper

Using pattern shift to avoid blank defects during EUVL mask fabrication

Yoshiyuki Negishi, Yuki Fujita, Kazunori Seki, Toshio Konishi, Jed Rankin, Steven Nash, Emily Gallagher, Alfred Wagner, Peter Thwaite, Ahmad Elayat

Proceedings Volume 8701, 870112 (2013) https://doi.org/10.1117/12.2030765

KEYWORDS: Extreme ultraviolet lithography, Inspection, Metals, Extreme ultraviolet, Photomasks, Lithography, Tantalum, Mask making, Visualization, Computer simulations

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Proceedings Article | 8 November 2012 Paper

Impact of EUV photomask line-edge roughness on wafer prints

Zhengqing John Qi, Emily Gallagher, Yoshiyuki Negishi, Gregory McIntyre, Amy Zweber, Tasuku Senna, Satoshi Akutagawa, Toshio Konishi

Proceedings Volume 8522, 85222H (2012) https://doi.org/10.1117/12.976855

KEYWORDS: Photomasks, Line edge roughness, Semiconducting wafers, Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Lithographic illumination, Photoresist materials, Linear filtering

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Proceedings Article | 23 March 2012 Paper

EUV mask line edge roughness

Amy Zweber, Emily Gallagher, Martha Sanchez, Tasuku Senna, Yoshiyuki Negishi, Toshio Konishi, Anne McGuire, Luisa Bozano, Phil Brock, Hoa Truong

Proceedings Volume 8322, 83220O (2012) https://doi.org/10.1117/12.916291

KEYWORDS: Line edge roughness, Photomasks, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Edge detection, Image filtering, EUV optics, Pixel resolution, Line width roughness

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Proceedings Article | 19 May 2008 Paper

MoSi absorber photomask for 32nm node

Toshio Konishi, Yosuke Kojima, Hiroyuki Takahashi, Masato Tanabe, Takashi Haraguchi, Matthew Lamantia, Yuichi Fukushima, Yoshimitsu Okuda

Proceedings Volume 7028, 702803 (2008) https://doi.org/10.1117/12.796010

KEYWORDS: Photomasks, Chromium, Semiconducting wafers, Air contamination, Lithography, Nanoimprint lithography, Printing, Critical dimension metrology, Binary data, Dry etching

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Proceedings Article | 20 October 2006 Paper

High-transmission attenuated phase-shift mask for ArF immersion lithography

Yosuke Kojima, Takashi Mizoguchi, Takashi Haraguchi, Toshio Konishi, Yoshimitsu Okuda

Proceedings Volume 6349, 63491V (2006) https://doi.org/10.1117/12.686998

KEYWORDS: Optical proximity correction, Transmittance, Photomasks, Polarization, Scanners, Resolution enhancement technologies, Lithography, Immersion lithography, Phase shifting, Semiconducting wafers

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Proceedings Article | 21 June 2006 Paper

Through-pitch and through-focus characterization of AAPSM for ArF immersion lithography

Toshio Konishi, Yosuke Kojima, Yoshimitsu Okuda, Vicky Philipsen, Leonardus Leunissen, Lieve Van Look

Proceedings Volume 6281, 62810S (2006) https://doi.org/10.1117/12.692802

KEYWORDS: Photomasks, Semiconducting wafers, Etching, Printing, Quartz, Immersion lithography, Chromium, Scanners, Lithography, Image enhancement

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Proceedings Article | 19 May 2006 Paper

Study of mask induced polarization effects on att.PSM in immersion lithography

Takashi Mizoguchi, Yousuke Kojima, Mikio Takagi, Tadashi Saga, Takashi Haraguchi, Toshio Konishi, Yuuichi Fukushima, Tsuyoshi Tanaka, Yoshimitsu Okuda

Proceedings Volume 6283, 62831E (2006) https://doi.org/10.1117/12.681878

KEYWORDS: Nanoimprint lithography, Photomasks, Polarization, Refractive index, Immersion lithography, Mass attenuation coefficient, Lithographic illumination, Lithography, Quartz, Printing

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Proceedings Article | 15 March 2006 Paper

Performance study of chromeless phase lithography mask for the 65nm node and beyond

Yosuke Kojima, Takashi Ohshima, Kazuaki Chiba, Toshio Konishi

Proceedings Volume 6154, 615428 (2006) https://doi.org/10.1117/12.656915

KEYWORDS: Nanoimprint lithography, Scattering, Phase shifts, Lithography, Photomasks, Resolution enhancement technologies, 193nm lithography, 3D image enhancement, Quartz, Electroluminescence

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Proceedings Article | 5 November 2005 Paper

Evaluation of quartz dry etching performance for next generation phase-shift mask applications

S. Anderson, T. Konishi, R. Koch, S. Yokoi, A. Kumar, I. Ibrahim

Proceedings Volume 5992, 59920Q (2005) https://doi.org/10.1117/12.632559

KEYWORDS: Etching, Reactive ion etching, Quartz, Photomasks, Chemistry, Resolution enhancement technologies, Ions, Dry etching, Lithography, Scanning electron microscopy

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Proceedings Article | 28 June 2005 Paper

Evaluation of the new-type ESPACER adopted for its removal after post-exposure bake process

Yoshihiro Saida, Takashi Okubo, Jun Sasaki, Toshio Konishi, Motohiko Morita

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617114

KEYWORDS: Photomasks, Phase shifts, Electron beam lithography, Diffusion, Resistance, Electronics, Quartz, Scanning electron microscopy, Photoresist processing, Thin film coatings

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Proceedings Article | 28 June 2005 Paper

Evaluation of quartz dry etching profile for the PSM lithography performance

Toru Komizo, Satoru Nemoto, Yosuke Kojima, Takashi Ohshima, Takashi Yoshii, Toshio Konishi, Kazuaki Chiba, Yasutaka Kikuchi, Masao Otaki, Yoshimitsu Okuda

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617440

KEYWORDS: Quartz, Photomasks, Lithography, Etching, Semiconducting wafers, Dry etching, Phase shifts, Chromium, Scanning electron microscopy, Electromagnetism

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Proceedings Article | 20 August 2004 Paper

Study of alternating phase shift mask structures for ArF lithography

Yosuke Kojima, Toshio Konishi, Jun Sasaki, Keishi Tanaka, Toru Komizo, Motohiko Morita, Masanori Shirasaki, Takashi Ohshima, Hiroyuki Takahashi, Kazuaki Chiba, Masao Otaki, Yoshimitsu Okuda

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557801

KEYWORDS: Photomasks, Semiconducting wafers, Chromium, Phase shifts, Lithography, Nanoimprint lithography, Printing, Logic devices, Light scattering, Semiconductors

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Proceedings Article | 17 December 2003 Paper

Study of alternating phase-shift mask structure for 65-nm node devices

Toshio Konishi, Tooru Komizo, Hiroyuki Takahashi, Motohiko Morita, Takashi Ohshima, Kazuaki Chiba, Yosuke Kojima, Jun Sasaki, Keishi Tanaka, Masao Otaki, Yoshimitsu Okuda

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.522180

KEYWORDS: Photomasks, Chromium, Semiconducting wafers, Reticles, Phase shifts, 193nm lithography, Mask making, Semiconductors, Analytical research, Printing

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