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8 November 2012 Study and comparison of negative tone resists for fabrication of bright field masks for 14nm node
Amy E. Zweber, Tom Faure, Anne McGuire, Linda K. Sundberg, Ratnam Sooriyakumaran, Martha I. Sanchez, Luisa D. Bozano, Tasuku Senna, Yuki Fujita, Yoshiyuki Negishi, Masahito Tanabe, Takahiro Kaneko
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Proceedings Volume 8522, Photomask Technology 2012; 85220S (2012) https://doi.org/10.1117/12.976878
Event: SPIE Photomask Technology, 2012, Monterey, California, United States
Abstract
In order to meet the challenging patterning requirements of the 14 nm node, the semiconductor industry has implemented use of negative tone develop (NTD) and other tone inversion techniques on wafer to enable use of bright field masks which provide an improved lithography process window.1,2,3 Due to e-beam write time and mask pattern fidelity requirements, the increased use of bright field masks means that mask makers must focus on improving the performance of their negative tone chemically amplified resist (NCAR) processes. In addition, the move to heavy use of bright field masks is introducing new challenges for mask makers. Bright field masks for 14 nm critical layers are required to have opaque sub-resolution assist features (SRAFs) as small as 50 nm while at the same time having across mask critical dimension uniformity (CDU) of less than 2 nm (3 sigma) to meet the 2014 ITRS targets.4 Achieving these specifications is particularly difficult for bright field contact and via level masks. This paper will survey the performance requirements for NCAR resists for building 14 nm critical level masks. As part of this survey, the results of current commercially available and development NCAR resists will be compared. The study will focus on key elements of the resist process pertaining to line edge roughness, pattern fidelity, minimum feature size, and critical dimension control through density with differences in resist type, sensitivity, and thickness. In addition, use of a novel flow cell test apparatus for detailed study of the develop loading performance of the NCAR resists will be described. Data showing the current capability of these NCAR materials as well as remaining 14 nm node performance gaps and issues will be presented.
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Amy E. Zweber, Tom Faure, Anne McGuire, Linda K. Sundberg, Ratnam Sooriyakumaran, Martha I. Sanchez, Luisa D. Bozano, Tasuku Senna, Yuki Fujita, Yoshiyuki Negishi, Masahito Tanabe, and Takahiro Kaneko "Study and comparison of negative tone resists for fabrication of bright field masks for 14nm node", Proc. SPIE 8522, Photomask Technology 2012, 85220S (8 November 2012); https://doi.org/10.1117/12.976878
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KEYWORDS
Photomasks
Line edge roughness
SRAF
Manufacturing
Opacity
Critical dimension metrology
Phase shifts
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