Photomask etch system and process for 10nm technology node and beyond

Madhavi Chandrachood; Michael Grimbergen; Keven Yu; Toi Leung; Jeffrey Tran; Jeff Chen; Darin Bivens; Rao Yalamanchili; Richard Wistrom; Tom Faure; Peter Bartlau; Shaun Crawford; Yoshifumi Sakamoto

doi:10.1117/12.2199030

23 October 2015 Photomask etch system and process for 10nm technology node and beyond

Madhavi Chandrachood, Michael Grimbergen, Keven Yu, Toi Leung, Jeffrey Tran, Jeff Chen, Darin Bivens, Rao Yalamanchili, Richard Wistrom, Tom Faure, Peter Bartlau, Shaun Crawford, Yoshifumi Sakamoto

Author Affiliations +

Proceedings Volume 9635, Photomask Technology 2015; 963516 (2015) https://doi.org/10.1117/12.2199030
Event: SPIE Photomask Technology, 2015, Monterey, California, United States

Abstract

While the industry is making progress to offer EUV lithography schemes to attain ultimate critical dimensions down to 20 nm half pitch, an interim optical lithography solution to address an immediate need for resolution is offered by various integration schemes using advanced PSM (Phase Shift Mask) materials including thin e-beam resist and hard mask. Using the 193nm wavelength to produce 10nm or 7nm patterns requires a range of optimization techniques, including immersion and multiple patterning, which place a heavy demand on photomask technologies. Mask schemes with hard mask certainly help attain better selectivity and hence better resolution but pose integration challenges and defectivity issues. This paper presents a new photomask etch solution for attenuated phase shift masks that offers high selectivity (Cr:Resist > 1.5:1), tighter control on the CD uniformity with a 3sigma value approaching 1 nm and controllable CD bias (5-20 nm) with excellent CD linearity performance (<5 nm) down to the finer resolution. The new system has successfully demonstrated capability to meet the 10 nm node photomask CD requirements without the use of more complicated hard mask phase shift blanks. Significant improvement in post wet clean recovery performance was demonstrated by the use of advanced chamber materials. Examples of CD uniformity, linearity, and minimum feature size, and etch bias performance on 10 nm test site and production mask designs will be shown.

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Madhavi Chandrachood, Michael Grimbergen, Keven Yu, Toi Leung, Jeffrey Tran, Jeff Chen, Darin Bivens, Rao Yalamanchili, Richard Wistrom, Tom Faure, Peter Bartlau, Shaun Crawford, and Yoshifumi Sakamoto "Photomask etch system and process for 10nm technology node and beyond", Proc. SPIE 9635, Photomask Technology 2015, 963516 (23 October 2015); https://doi.org/10.1117/12.2199030

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KEYWORDS

Etching

Photomasks

Opacity

Chromium

Critical dimension metrology

Process control

Phase shifts

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