Dr. Ayman Hamouda Profile

Dr. Ayman Hamouda

Principal Engineer ASML at ASML

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Author

Publications (16)

Proceedings Article | 20 March 2018 Presentation + Paper

Inverse lithography OPC correction with multiple patterning and etch awareness

Heon Choi, Ayman Hamouda

Proceedings Volume 10587, 105870O (2018) https://doi.org/10.1117/12.2297368

KEYWORDS: Etching, Photomasks, Optical proximity correction, Optical lithography, Lithography, Printing, Deep ultraviolet, Critical dimension metrology, Mask making, Resolution enhancement technologies

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Proceedings Article | 24 March 2017 Presentation + Paper

Enhanced OPC recipe coverage and early hotspot detection through automated layout generation and analysis

Ayman Hamouda, Mohamed Bahnas, Dan Schumacher, Ioana Graur, Ao Chen, Kareem Madkour, Hussein Ali, Jason Meiring, Neal Lafferty, Chris McGinty

Proceedings Volume 10147, 101470R (2017) https://doi.org/10.1117/12.2260769

KEYWORDS: Optical proximity correction, Optical lithography, Semiconductor manufacturing, Photomasks, Computational lithography, Databases, Resolution enhancement technologies, Visualization, Semiconducting wafers, Design for manufacturing, Cadmium

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Proceedings Article | 25 October 2016 Paper

Combining mask and OPC process verification for improved wafer patterning and yield

Ayman Hamouda, Hesham Abdelghany

Proceedings Volume 9985, 99852A (2016) https://doi.org/10.1117/12.2246563

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Optical lithography, Process modeling, Manufacturing, Yield improvement, Etching, Electron beam lithography, Data modeling

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Proceedings Article | 16 March 2016 Paper

Wafer hotspot prevention using etch aware OPC correction

Ayman Hamouda, Dave Power, Mohamed Salama, Ao Chen

Proceedings Volume 9781, 978115 (2016) https://doi.org/10.1117/12.2220778

KEYWORDS: Etching, Optical proximity correction, Optical lithography, Semiconducting wafers, Calibration, Photomasks, Bridges, Yield improvement, Computer simulations, Lithography

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Proceedings Article | 18 March 2015 Paper

A holistic methodology to drive process window entitlement and its application to 20nm logic

Lalit Shokeen, Ayman Hamouda, Mark Terry, Dan Dechene, Stephen Hsu, Michael Crouse, Pengcheng Li, Keith Gronlund, Gary Zhang

Proceedings Volume 9427, 94270Z (2015) https://doi.org/10.1117/12.2086101

KEYWORDS: Scanners, Optical proximity correction, Source mask optimization, Process modeling, Logic, Photomasks, Semiconducting wafers, Optical lithography, Lithography, Etching

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Proceedings Article | 18 March 2015 Paper

Efficient etch bias compensation techniques for accurate on-wafer patterning

Mohamed Salama, Ayman Hamouda

Proceedings Volume 9427, 94270X (2015) https://doi.org/10.1117/12.2085956

KEYWORDS: Etching, Critical dimension metrology, Optical proximity correction, Model-based design, Process modeling, Semiconducting wafers, Metals, Optical lithography, Calibration, Data modeling

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Proceedings Article | 16 September 2014 Paper

Efficient model-based dummy-fill OPC correction flow for deep sub-micron technology nodes

Ayman Hamouda, Mohamed Salama

Proceedings Volume 9235, 92351W (2014) https://doi.org/10.1117/12.2070544

KEYWORDS: Optical proximity correction, Photomasks, SRAF, Model-based design, Printing, Optical lithography, Chemical mechanical planarization, Etching, Resolution enhancement technologies, Semiconducting wafers

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Proceedings Article | 9 September 2013 Paper

Using segmented models for initial mask perturbation and OPC speedup

Ayman Hamouda, Mohab Anis, Karim Karim

Proceedings Volume 8880, 88801I (2013) https://doi.org/10.1117/12.2027718

KEYWORDS: Optical proximity correction, Model-based design, Photomasks, Image segmentation, Optical lithography, Printing, Data modeling, Ions, Resolution enhancement technologies, Lithography

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Proceedings Article | 12 April 2013 Paper

Enabling reverse tone imaging for via levels using attenuated phase shift mask and source optimization

Bassem Hamieh, Hyun Chol Choi, Burcin Erenturk, Wei Guo, Ayman Hamouda, Huikan Liu, Gregory McIntyre, Jason Meiring, David Moreau, Alan Thomas, Alexander Wei

Proceedings Volume 8683, 86830J (2013) https://doi.org/10.1117/12.2011349

KEYWORDS: Photomasks, Source mask optimization, Printing, Data modeling, SRAF, Phase shifts, Photovoltaics, Image processing, Nanoimprint lithography, Binary data

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Proceedings Article | 5 April 2011 Paper

Aerial image retargeting (AIR): achieving litho-friendly designs

Ayman Yehia Hamouda, James Word, Mohab Anis, Karim Karim

Proceedings Volume 7974, 797411 (2011) https://doi.org/10.1117/12.882073

KEYWORDS: Optical proximity correction, Artificial intelligence, Metals, Resolution enhancement technologies, Model-based design, Photomasks, Lithography, Semiconducting wafers, Electrochemical etching, Optical lithography

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Proceedings Article | 30 October 2007 Paper

Simultaneous model-based main feature and SRAF optimization for 2D SRAF implementation to 32 nm critical layers

Ayman Yehia, Alexander Tritchkov

Proceedings Volume 6730, 67302K (2007) https://doi.org/10.1117/12.747448

KEYWORDS: SRAF, Photovoltaics, Optical proximity correction, Resolution enhancement technologies, Model-based design, Metals, Optimization (mathematics), Manufacturing, Photomasks, Lithography

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Proceedings Article | 30 October 2007 Paper

Automatic assist feature placement optimization based on process-variability reduction

Srividya Jayaram, Ayman Yehia, Mohamed Bahnas, Hesham Maaty Omar, Zeki Bozkus, John Sturtevant

Proceedings Volume 6730, 67302E (2007) https://doi.org/10.1117/12.748035

KEYWORDS: SRAF, Photovoltaics, Printing, Model-based design, Tolerancing, Error analysis, Antimony, Critical dimension metrology, Semiconducting wafers, Image processing

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Proceedings Article | 27 March 2007 Paper

Mask-friendly OPC for a reduced mask cost and writing time

Ayman Yehia

Proceedings Volume 6520, 65203Y (2007) https://doi.org/10.1117/12.714395

KEYWORDS: Optical proximity correction, Photomasks, Resolution enhancement technologies, Optical alignment, Optical lithography, Mask making, Model-based design, Beam shaping, Silicon, Visualization

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Proceedings Article | 21 March 2007 Paper

Optimizing gate layer OPC correction and SRAF placement for maximum design manufacturability

Travis Brist, Le Hong, Ayman Yehia, Tamer Tawfik, Shumay Shang, Kyohei Sakajiri, John Sturtevant

Proceedings Volume 6521, 65211L (2007) https://doi.org/10.1117/12.712748

KEYWORDS: SRAF, Optical proximity correction, Critical dimension metrology, Manufacturing, Photomasks, Model-based design, Antimony, Design for manufacturability, Optimization (mathematics), Resolution enhancement technologies

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Proceedings Article | 21 March 2006 Paper

Improvements in post-OPC data constraints for enhanced process corrections

Ryan Burns, Yuping Cui, Zengqin Zhao, Ian Stobert, Pat LaCour, Ayman Yehia, Kareem Madkour, Mohamed Gheith, Ahmed Seoud

Proceedings Volume 6154, 61543G (2006) https://doi.org/10.1117/12.656649

KEYWORDS: Optical proximity correction, Photomasks, Inspection, Lithography, SRAF, Printing, Neck, Visualization, Standards development, Defect inspection

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Current state-of-the-art OPC (optical proximity correction) for 2-dimensional features consists of optimized fragmentation followed by site simulation and subsequent iterations to adjust fragment locations and minimize edge placement error (EPE). Internal and external constraints have historically been available in production quality code to limit the movement of certain fragments, and this provides additional control for OPC. Values for these constraints are left to engineering judgment, and can be based on lithography process limitations, mask house process limitations, or mask house inspection limitations. Often times mask house inspection limitations are used to define these constraints. However, these inspection restrictions are generally more complex than the 2 degrees of freedom provided in existing standard OPC software. Ideally, the most accurate and robust OPC software would match the movement constraints to the defect inspection requirements, as this prevents over-constraining the OPC solution. This work demonstrates significantly improved 2-D OPC correction results based on matching movement constraints to inspection limitations. Improvements are demonstrated on a created array of 2D designs as well as critical level chip designs used in 45nm technology. Enhancements to OPC efficacy are proven for several types of features. Improvements in overall EPE (edge placement error) are demonstrated for several different types of structures, including mushroom type landing pads, iso crosses, and H-bar structures. Reductions in corner rounding are evident for several 2-dimensional structures, and are shown with dense print image simulations. Dense arrays (SRAM) processed with the new constraints receive better overall corrections and convergence. Furthermore, OPC and ORC (optical rules checking) simulations on full chip test sites with the advanced constraints have resulted in tighter EPE distributions, and overall improved printing to target.

SPIE Journal Paper | 1 May 2004

Cascaded multimode interference phased array structures for dense wavelength division multiplexing applications

Ayman Yehia, Diaa Khalil

OE, Vol. 43, Issue 05, (May 2004) https://doi.org/10.1117/12.10.1117/1.1695404

KEYWORDS: Brain-machine interfaces, Demultiplexers, Phased arrays, Dense wavelength division multiplexing, Waveguides, Integrated optics, Phased array optics, Refractive index, Optical engineering, Structural design

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Showing 5 of 16 publications

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