Dr. Shy-Jay Lin Profile

Dr. Shy-Jay Lin

Department manager at Taiwan Semiconductor Manufacturing Co Ltd

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 21 November 2023 Presentation + Paper

EUV APSM mask prospects and challenges

Shy-Jay Lin, Chien-Min Lee, Yen-Liang Chen, Kuo-Lun Tai, Lee-Feng Chen, Chien-Chao Huang, Frankie F. Tsai

Proceedings Volume 12751, 127510N (2023) https://doi.org/10.1117/12.2688111

KEYWORDS: 3D mask effects, Extreme ultraviolet, Extreme ultraviolet lithography, Thermal stability, Stochastic processes, Semiconducting wafers, Refractive index, Projection systems, Photoresist materials, Photons

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Proceedings Article | 21 November 2023 Presentation + Paper

New EUV mask blank for N3 technology node and beyond

S. Yang, W. Chen, C. Huang, Chien-Min Lee, Joy Huang, Shy-Jay Lin, C. Chen, Yoshiaki Ikuta, Tomohiko Satoh, Yosuke Nakakita

Proceedings Volume 12751, 127510G (2023) https://doi.org/10.1117/12.2688179

KEYWORDS: Etching, Ruthenium, Extreme ultraviolet, Semiconducting wafers, 3D mask effects, Photoresist processing, Reflection, Optical proximity correction

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Proceedings Article | 4 October 2022 Presentation

Enhancing spin-orbit torque efficiency via orbital currents (Conference Presentation)

Chen-Yu Hu, Yu-Fang Chiu, Chia-Chin Tsai, Chao-Chun Huang, Kuan-Hao Chen, Cheng-Wei Peng, Chien-Min Lee, Ming-Yuan Song, Yen-Lin Huang, Shy-Jay Lin, Chi-Feng Pai

Proceedings Volume PC12205, PC1220518 (2022) https://doi.org/10.1117/12.2634506

KEYWORDS: Magnetism, Chromium, Transition metals, Platinum, Metals, Heterojunctions

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Proceedings Article | 19 March 2015 Paper

Thermal effect induced wafer deformation in high-energy e-beam lithography

P.S. Chen, W.C. Wang, S.J. Lin

Proceedings Volume 9423, 942310 (2015) https://doi.org/10.1117/12.2085100

KEYWORDS: Distortion, Thermal effects, Semiconducting wafers, Silicon carbide, Silicon, Finite element methods, Scattering, Thermal modeling, Electron beam lithography, Scanners

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Proceedings Article | 19 March 2015 Paper

Contour-based kernel modeling and verification for E-Beam lithography

Jan-Wen You, Cheng-Hung Chen, Tsung-Chih Chien, Jaw-Jung Shin, Shy-Jay Lin, Burn Lin

Proceedings Volume 9423, 94231D (2015) https://doi.org/10.1117/12.2085099

KEYWORDS: Scattering, Electron beam lithography, Laser scattering, Optimization (mathematics), Photomasks, Systems modeling, Backscatter, Critical dimension metrology, Point spread functions, Feature extraction

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Proceedings Article | 19 March 2015 Paper

An instruction-based high-throughput lossless decompression algorithm for e-beam direct-write system

Cheng-Chi Wu, Jensen Yang, Wen-Chuan Wang, Shy-Jay Lin

Proceedings Volume 9423, 94231P (2015) https://doi.org/10.1117/12.2085278

KEYWORDS: Image compression, Chromium, Data storage, Associative arrays, Algorithm development, Optical fibers, Computer programming, Direct write lithography, Data analysis, Manufacturing

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Proceedings Article | 28 March 2014 Paper

The REBL DPG: recent innovations and remaining challenges

Allen Carroll, Luca Grella, Kirk Murray, Mark McCord, Paul Petric, William Tong, Christopher Bevis, Shy-Jay Lin, Tsung-Hsin Yu, Tze-Chiang Huang, T. Wang, Wen-Chuan Wang, J. Shin

Proceedings Volume 9049, 904917 (2014) https://doi.org/10.1117/12.2048528

KEYWORDS: Mirrors, Lithography, Semiconducting wafers, Error control coding, Reflectivity, Switching, Electrodes, Data compression, Printing, Electron beam lithography

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Proceedings Article | 28 March 2014 Paper

REBL DPG lenslet structure: design for charging prevention

Shy-Jay Lin, T. Bao, C. Lu, S.-C. Wang, T. C. Chien, J.-J. Shin, Burn Lin, Mark McCord, Alan Brodie, Allen Carroll, Luca Grella

Proceedings Volume 9049, 90491X (2014) https://doi.org/10.1117/12.2045416

KEYWORDS: Dielectrics, Electrodes, Electron beam lithography, Microelectromechanical systems, Atomic layer deposition, Lens design, Structural design, Coating, Reflectivity, Electron beams

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Proceedings Article | 9 September 2013 Paper

Impact of proximity model inaccuracy on patterning in electron beam lithography

Cheng-Hung Chen, Tsung-Chih Chien, P. Liu, W. C. Wang, J. Shin, S. Lin, Burn Lin

Proceedings Volume 8880, 888014 (2013) https://doi.org/10.1117/12.2029180

KEYWORDS: Scattering, Electron beam lithography, Data modeling, Laser scattering, Critical dimension metrology, Monte Carlo methods, Backscatter, Photomasks, Lithography, Electron beams

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Proceedings Article | 26 March 2013 Paper

Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

Thomas Gubiotti, Jeff Fuge Sun, Regina Freed, Francoise Kidwingira, Jason Yang, Chris Bevis, Allen Carroll, Alan Brodie, William Tong, Shy-Jay Lin, Wen-Chuan Wang, Luc Haspeslagh, Bart Vereecke

Proceedings Volume 8680, 86800H (2013) https://doi.org/10.1117/12.2010722

KEYWORDS: Semiconducting wafers, Electron beam lithography, Lithography, Coating, Logic, Electron beams, Polymethylmethacrylate, Printing, Reflectivity, Silica

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Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-volume 10 nm logic node performance. REBL uses a novel multi-column wafer writing system combined with an advanced stage architecture to enable the throughput and resolution required for a NGL system. Using a CMOS Digital Pattern Generator (DPG) chip with over one million microlenses, the system is capable of maskless printing of arbitrary patterns with pixel redundancy and pixel-by-pixel grayscaling at the wafer. Electrons are generated in a flood beam via a thermionic cathode at 50-100 keV and decelerated to illuminate the DPG chip. The DPG-modulated electron beam is then reaccelerated and demagnified 80-100x onto the wafer to be printed. Previously, KLA-Tencor reported on the development progress of the REBL tool for maskless lithography at and below the 10 nm logic technology node. Since that time, the REBL team has made good progress towards developing the REBL system and DPG for direct write lithography. REBL has been successful in manufacturing a CMOS controlled DPG chip with a stable charge drain coating and with all segments functioning. This DPG chip consists of an array of over one million electrostatic lenslets that can be switched on or off via CMOS voltages to pattern the flood electron beam. Testing has proven the validity of the design with regards to lenslet performance, contrast, lifetime, and pattern scrolling. This chip has been used in the REBL demonstration platform system for lithography on a moving stage in both PMMA and chemically amplified resist. Direct imaging of the aerial image has also been performed by magnifying the pattern at the wafer plane via a mag stack onto a YAG imaging screen. This paper will discuss the chip design improvements and new charge drain coating that have resulted in a functional DPG chip and will evaluate the current chip performance on the REBL system. Print results for line/space and device test patterns at the 100nm node will be presented.

Proceedings Article | 26 March 2013 Paper

Influence of data volume and EPC on process window in massively parallel e-beam direct write

Shy-Jay Lin, Pei-Yi Liu, Cheng-Hung Chen, Wen-Chuan Wang, Jaw-Jung Shin , Burn Jeng Lin, Mark McCord, Sameet Shriyan

Proceedings Volume 8680, 86801C (2013) https://doi.org/10.1117/12.2010865

KEYWORDS: Electroluminescence, Raster graphics, Scattering, Monte Carlo methods, Silica, Diffusion, Laser scattering, Quantization, Modulation transfer functions, Backscatter

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Proceedings Article | 21 March 2012 Paper

Reflective electron-beam lithography: progress toward high-throughput production capability

Regina Freed, Thomas Gubiotti, Jeff Sun, Francoise Kidwingira, Jason Yang, Upendra Ummethala, Layton Hale, John Hench, Shinichi Kojima, Walter Mieher, Chris Bevis, Shy-Jay Lin, Wen-Chuan Wang

Proceedings Volume 8323, 83230H (2012) https://doi.org/10.1117/12.916090

KEYWORDS: Electron beam lithography, Semiconducting wafers, Electroluminescence, Lithography, Monte Carlo methods, Reflectivity, Electron beams, Direct write lithography, Silicon, Computer aided design

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Proceedings Article | 16 April 2011 Paper

A study of conductive material for e-beam lithography

Wen-Yun Wang, Chen-Yu Liu, Tsung-Chih Chien, Chun-Ching Huang, Shy-Jay Lin, Ya-Hui Chang, Jack J.H. Chen, Ching-Yu Chang, Yao-Ching Ku, Burn J. Lin

Proceedings Volume 7972, 797228 (2011) https://doi.org/10.1117/12.879575

KEYWORDS: Electrons, Metals, Polymers, Scanning electron microscopy, Electron beam lithography, Monte Carlo methods, Polymer thin films, Critical dimension metrology, Resistance, Photomasks

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Proceedings Article | 4 April 2011 Paper

Data path development for multiple electron beam maskless lithography

Faruk Krecinic, Shy-Jay Lin, Jack J. Chen

Proceedings Volume 7970, 797010 (2011) https://doi.org/10.1117/12.881010

KEYWORDS: Field programmable gate arrays, Data storage, Maskless lithography, Photomasks, Electron beams, Semiconducting wafers, Data processing, Prototyping, Data conversion, Logic

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Electron beam lithography has been used in the production of integrated circuits for decades. However, due to the limitation of throughput it was not a viable solution for high volume manufacturing and its biggest application is the production of semiconductor masks. For many considerations it has particularly now become desirable to eliminate the semiconductor mask and introduce maskless lithography for semiconductor fabrication. Multiple Electron Beam Maskless Lithography (MEBML2) has been proposed as a solution to overcome the traditional source current limitation of an electron beam system by using many thousands of parallel electron beamlets to write a pattern directly on the wafer. In developing the MEBML2 tool the challenges have shifted and, in absence of the mask, the system data path has emerged as one of the central challenges. The main theme in the data path development is bandwidth. The required raw bandwidth at the patterning beams is determined by throughput and resolution, i.e. pixel size and number of intensity modulation levels. To achieve a production worthy throughput at 10 wafers per hour in a Gaussian-beam-based maskless lithography system, by writing 3.5-nm pixels at 2 levels (on/off) which is required for the 22-nm lithography node, the required aggregate bandwidth at the beam blanker array is up to 45 Tbit/s. Such a large bandwidth requirement means that the data path architecture is mainly characterized by the bandwidth of the data streams in the system. Compression techniques can be used to reduce the intermediate data stream bandwidth requirements and consequently lead to simplifying the system design, reducing power consumption and footprint, but come at the cost of increased data processing complexity and possible limitations on throughput. In this paper we will show results from the development of a prototype data path for the Gaussian-beam-based maskless lithography system. A new concept for data processing and storage is proposed. The vertex-based processing and storage technique is adopted to reduce memory usage considerably, with only modest requirements on the hardware resources. It reveals that a realistically implementable data path system for the maskless lithography tool in high volume manufacturing is feasible.

Proceedings Article | 4 April 2011 Paper

Influence of massively parallel e-beam direct-write pixel size on electron proximity correction

S. J. Lin, P. S. Chen, J. J. Shin, W. C. Wang, Burn Lin

Proceedings Volume 7970, 79700Z (2011) https://doi.org/10.1117/12.869896

KEYWORDS: Raster graphics, Critical dimension metrology, Semiconducting wafers, Data transmission, Electron beam lithography, Tolerancing, Optical fibers, Maskless lithography, Electron beam direct write lithography, Mask making

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Proceedings Article | 3 April 2010 Paper

Characteristics performance of production-worthy multiple e-beam maskless lithography

S. Lin, W. Wang, P. Chen, C. Liu, T. Lo, Jack J. Chen, Faruk Krecinic, Burn Lin

Proceedings Volume 7637, 763717 (2010) https://doi.org/10.1117/12.848319

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Maskless lithography, Scattering, Electron beam lithography, Laser scattering, Electron beams, Image resolution, Electron beam direct write lithography, Manufacturing

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Proceedings Article | 12 December 2009 Paper

Imaging performance of production-worthy multiple-E-beam maskless lithography

S. J. Lin, W. C. Wang, Jack Chen, Faruk Krecinic, Burn Lin, Guido de Boer, Erwin Slot, Remco Jager, Stijn Steenbrink, Bert-Jan Kampherbeek, Marco Wieland

Proceedings Volume 7520, 752009 (2009) https://doi.org/10.1117/12.838573

KEYWORDS: Maskless lithography, Semiconducting wafers, Electron beam lithography, Line width roughness, Critical dimension metrology, Finite element methods, Manufacturing, Electron beams, Photomasks, Image resolution

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Proceedings Article | 20 March 2008 Paper

Patterning fidelity on low-energy multiple-electron-beam direct write lithography

S. M. Chang, S. J. Lin, C. A. Lin, J. H. Chen, T. S. Gau, Burn Lin, P. Veltman, R. Hanfoug, E. Slot, M. Wieland, B. Kampherbeek

Proceedings Volume 6921, 69211R (2008) https://doi.org/10.1117/12.771392

KEYWORDS: Electrons, Line width roughness, Electron beam lithography, Scattering, Laser scattering, Monte Carlo methods, Optical simulations, Lithography, Raster graphics, Image resolution

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Proceedings Article | 22 January 2001 Paper

Printing 0.13-um contact holes using 193-nm attenuated phase-shifting masks

Chun-Ming Wang, Shy-Jay Lin, Chia-Hui Lin, Yao Ching Ku, Anthony Yen

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410704

KEYWORDS: Photomasks, Printing, Binary data, Semiconducting wafers, Critical dimension metrology, Phase shifts, Phase shifting, Logic devices, 193nm lithography, Lithography

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