Mr. Hiroki Miyai Profile

Hiroki Miyai

General manager at Lasertec Corp

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Author

Publications (20)

Proceedings Article | 10 April 2024 Presentation + Paper

Actinic patterned mask inspection for high-NA EUV lithography

Ko Gondaira, Toshiyuki Todoroki, Masayasu Nishizawa, Hiroki Miyai

Proceedings Volume 12953, 129530G (2024) https://doi.org/10.1117/12.3010550

KEYWORDS: Inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Light sources, Defect detection, Design, Printing, Pellicles, Light sources and illumination, Laser development

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Proceedings Article | 21 November 2023 Presentation + Paper

Actinic pattern mask inspection for high-NA EUV lithography

Toshiyuki Todoroki, Ko Gondaira, Arosha Goonesekera, Hiroki Miyai

Proceedings Volume 12751, 1275102 (2023) https://doi.org/10.1117/12.2686350

KEYWORDS: Inspection, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Laser development, Defect detection, Actinic inspection, Photomasks, Phase shifts, Objectives

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Lasertec released the actinic patterned mask inspection (APMI) system ACTIS in 2019 and has since been providing it as an actinic inspection solution for EUV mask inspection. ACTIS performs high-resolution, high-throughput inspection of EUV photomasks. It detects all types of mask defects making lithographic impact because it uses the wavelength of light used in EUV lithography as its light source. While actinic inspection is typically known for its capability to detect phase defects, it is also indispensable for detecting phase shift defects on EUV PSM. ACTIS performs both die-to-die (D2D) and die-to-database (DDB) inspections and can inspect all types of EUV masks including multi-die masks and single-die masks. High-NA lithography is expected to be used for the EUV process at the technology nodes of N2 and beyond. The nextgeneration ACTIS has an objective mirror with a higher NA. This makes it possible to have different resolution characteristics in the X and Y directions, enabling it to meet the sensitivity required to detect defects in the anamorphic patterns used for high-NA EUV lithography. In addition, as design nodes become smaller, curvilinear masks will be adopted to improve resolution characteristics on wafers, which will require handling a large amount of design data per mask. For DDB inspection, which generates reference images using sophisticated, high-speed computer processing, the inspection of curvilinear masks is a major challenge. In DDB inspection, curve masks generate large amounts of data because complex curve shapes are approximated using polygons with a large number of vertices. It needs more computing resources and leads to a longer processing time. The reference images generated for inspection must be more intricate. APMI is necessary for pattern mask qualification of EUV masks with pellicles. However, the high sensitivity inspection of masks with EUV pellicles was prevented by the incident power limitation by heat load on the pellicle. Therefore, we have developed a new EUV light source that can minimize the thermal load. This paper describes the development results of the next-generation ACTIS for high-NA EUV lithography, the DDB inspection capability of ACTIS for curvilinear masks, as well as the requirements for APMI light sources, which differ from those of EUV scanner light sources, and the development result of Lasertec's EUV light source "URASHIMA".

Proceedings Article | 21 November 2023 Presentation + Paper

Actinic inspection technology enhancement for N3 node and beyond

Hao-Ming Chang, Hsin-Fu Tseng, C. Lu, S. Hsu, Wei-Chung Hu, Ajay Nandoriya, Yi-An Huang, Yung-Sheng Chang, C. Wen, Frankie F. Tsai, Hiroki Miyai, Masayasu Nishizawa, Atsushi Tajima, Hirokazu Seki

Proceedings Volume 12751, 1275103 (2023) https://doi.org/10.1117/12.2688174

KEYWORDS: Tin, Extreme ultraviolet, Inspection, Pellicles, Liquids, Plasma, Actinic inspection, Design and modelling, Deep ultraviolet, Sensors

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Given the successful development in actinic pattern mask inspection (APMI), high-volume manufacturing of advanced chips including N5 and N3 was realized due to the defect-free masks provided by the TSMC mask shop. This achievement was attributed to the newly developed EUV source and GPU-based defect detection with machine learning (ML) assistance. Unlike conventional approaches which sustain less than two weeks, the rotated crucible fed by Sn fuel in the LPP (Laser-produced plasma) system provided one month of operating stability with ultra-low tin consumption. The newly developed LPP EUV light source has been moved towards double IR power to produce higher EUV photon counts, resulting in better throughput and inspection sensitivity. It enables captured images to possess an effective signalto-noise ratio (SNR) and reasonable inspection nuisance counts. The common technique challenges, Sn auto-refuel and debris mitigation, were overcome by auto-refuel and reuse, debris mitigation, and plasma position control. Moreover, the LPP system also showed its capability in performing pellicle inspection to prolong mask operation periods in wafer foundries. For the GPU-based inspection system, it provided the feasibility and flexibility in algorithm development compared to the FPGA approach. The TSMC developed machine-learning (ML) based rendering model played a key role in aligning features with tool images in D2D mode, as well as residue reduction of D2DB mode. All rendering models were implemented by CUDA coding and running on TSMC-customized GPU architecture to fulfill the goal of high-speed computation and defect capture rate that met production specifications. Combining with the ML model, proper detectors were designed for each specific feature, such as SRAF and curvy OPC design, and the performance of auto defect classification (ADC) with the model has been proven. By integrating all the work, it enabled the actinic tools to fulfill the requirement of massive production significantly.

Proceedings Article | 21 November 2023 Presentation + Paper

Realizing EUV photomask defectivity qualification by actinic mask review system

Jiun-Lung Lu, Chien-Hsing Lu, Hsin-Fu Tseng, Vincent C. Wen, Chun-Hung Chen, Yi-An Huang, Yung-Sheng Chang, Sagar Trivedi, Danping Peng, Takayuki Morisawa, Hiroki Miyai

Proceedings Volume 12751, 127510P (2023) https://doi.org/10.1117/12.2688176

KEYWORDS: Extreme ultraviolet, Photomasks, Reticles, Printing, Semiconductors, Semiconducting wafers, Integrated circuits, Source mask optimization, Risk assessment, Reliability

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Proceedings Article | 29 September 2023 Paper

Actinic patterned mask inspection for EUV lithography

Toshiyuki Todoroki, Hiroki Miyai

Proceedings Volume 12915, 1291502 (2023) https://doi.org/10.1117/12.2685011

KEYWORDS: Inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Pellicles, Light sources, Printing, Lithography, Defect detection, Projection systems

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Proceedings Article | 1 December 2022 Paper

Mask inspection technologies for expanding EUV lithography

Arosha Goonesekera, Hiroki Miyai, Tsunehito Kohyama, Toshiyuki Todoroki

Proceedings Volume 12293, 1229302 (2022) https://doi.org/10.1117/12.2643295

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Pellicles, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Printing, EUV optics, Optical inspection

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Proceedings Article | 16 September 2022 Paper

Actinic patterned mask inspection for EUV lithography

Tsunehito Kohyama, Hiroki Miyai, Toshiyuki Todoroki

Proceedings Volume 12325, 123250H (2022) https://doi.org/10.1117/12.2642098

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Pellicles, Deep ultraviolet, Projection systems, Defect detection, Particles, Lithography

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Proceedings Article | 23 August 2021 Paper

Actinic patterned mask inspection for EUV lithography

Hiroki Miyai, Tsunehito Kohyama, Toshiyuki Todoroki

Proceedings Volume 11908, 119080H (2021) https://doi.org/10.1117/12.2601872

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Pellicles, Extreme ultraviolet lithography, Semiconducting wafers, Printing, EUV optics, Projection systems, Particles

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Proceedings Article | 9 April 2020 Paper

Enabling EUVL high-volume manufacturing with actinic patterned mask inspection

Anna Tchikoulaeva, Hiroki Miyai, Tsunehito Kohyama, Kiwamu Takehisa, Haruhiko Kusunose

Proceedings Volume 11323, 113231K (2020) https://doi.org/10.1117/12.2557858

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Reticles, Defect detection, High volume manufacturing, Particles, Pellicles, Deep ultraviolet

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Proceedings Article | 25 November 2019 Open Access

Actinic patterned mask defect inspection for EUV lithography

Hiroki Miyai, Tsunehito Kohyama, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose

Proceedings Volume 11148, 111480W (2019) https://doi.org/10.1117/12.2538001

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Defect inspection, Deep ultraviolet, Defect detection, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Image resolution

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Proceedings Article | 18 March 2016 Paper

Advances in the detection capability on actinic blank inspection

Takeshi Yamane, Tsuyoshi Amano, Noriaki Takagi, Hidehiro Watanabe, Ichro Mori, Tomohisa Ino, Tomohiro Suzuki, Kiwamu Takehisa, Hiroki Miyai, Haruhiko Kusunose

Proceedings Volume 9776, 97761G (2016) https://doi.org/10.1117/12.2222747

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Light scattering, Multilayers, Defect detection, Extreme ultraviolet, Semiconducting wafers, Lithographic illumination, Mirrors, EUV optics, CCD cameras

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Proceedings Article | 9 July 2015 Paper

Analysis of a low-aspect phase defect for actinic EUVL mask blank inspection

Takeshi Yamane, Tomohisa Ino, Hiroki Miyai

Proceedings Volume 9658, 96580N (2015) https://doi.org/10.1117/12.2197502

KEYWORDS: Light scattering, Prototyping, Photomasks, Semiconducting wafers, Mirrors, Inspection, Reflectivity, Extreme ultraviolet lithography, Defect detection, Interference (communication)

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Proceedings Article | 9 July 2015 Paper

Detection capability of Actinic Blank Inspection tool

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 9658, 96580O (2015) https://doi.org/10.1117/12.2197309

KEYWORDS: Inspection, Mirrors, Lithographic illumination, Extreme ultraviolet, Defect detection, Photomasks, Ray tracing, Data modeling, Extreme ultraviolet lithography, High volume manufacturing

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Proceedings Article | 28 July 2014 Paper

Performance in practical use of actinic EUVL mask blank inspection

Takeshi Yamane, Yongdae Kim, Noriaki Takagi, Tsuneo Terasawa, Tomohisa Ino, Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose

Proceedings Volume 9256, 92560P (2014) https://doi.org/10.1117/12.2067566

KEYWORDS: Photomasks, Inspection, Surface roughness, Prototyping, Semiconducting wafers, Defect detection, Critical dimension metrology, Extreme ultraviolet lithography, Light scattering, CCD cameras

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Proceedings Article | 28 July 2014 Paper

Defect analysis on actinic blank inspection tool

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 9256, 92560O (2014) https://doi.org/10.1117/12.2069197

KEYWORDS: Inspection, Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Image classification, Mirrors, Geometrical optics, Ray tracing, Lithography, Manufacturing

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Proceedings Article | 17 April 2014 Paper

Improvement of defect mitigation with EUV actinic blank inspection prototype for 16 nm hp

Tetsunori Murachi, Tsuyoshi Amano, Tomohiro Suzuki, Hiroki Miyai

Proceedings Volume 9048, 904820 (2014) https://doi.org/10.1117/12.2046130

KEYWORDS: Fermium, Extreme ultraviolet, Photomasks, Inspection, Frequency modulation, Extreme ultraviolet lithography, Solids, Coating, Molybdenum, Prototyping

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SPIE Journal Paper | 6 March 2014

Effectiveness of extreme ultraviolet actinic blank inspection prototype for 16-nm half-pitch for mitigation of multilayered defects

Tetsunori Murachi, Tsuyoshi Amano, Tomohiro Suzuki, Hiroki Miyai

JM3, Vol. 13, Issue 01, 013011, (March 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.013011

KEYWORDS: Fermium, Extreme ultraviolet, Inspection, Frequency modulation, Photomasks, Multilayers, Extreme ultraviolet lithography, Molybdenum, Solids, Prototyping

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Proceedings Article | 28 June 2013 Paper

The capability of high magnification review function for EUV actinic blank inspection tool

Hiroki Miyai, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Ichiro Mori

Proceedings Volume 8701, 870118 (2013) https://doi.org/10.1117/12.2030712

KEYWORDS: Inspection, Mirrors, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Charge-coupled devices, Defect detection, Multilayers, Switches, Ions

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Proceedings Article | 1 April 2013 Paper

EUV actinic blank inspection: from prototype to production

Anna Tchikoulaeva, Hiroki Miyai, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Soichi Inoue, Ichiro Mori

Proceedings Volume 8679, 86790I (2013) https://doi.org/10.1117/12.2011776

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect inspection, Prototyping, Extreme ultraviolet lithography, Defect detection, High volume manufacturing, Metrology, Mirrors

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Proceedings Article | 30 June 2012 Paper

EUV actinic blank inspection tool with a high magnification review mode

Tomohiro Suzuki, Hiroki Miyai, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Soichi Inoue, Ichiro Mori

Proceedings Volume 8441, 844115 (2012) https://doi.org/10.1117/12.964983

KEYWORDS: Inspection, Mirrors, Extreme ultraviolet, Switches, EUV optics, Photomasks, Charge-coupled devices, Cameras, Extreme ultraviolet lithography, Electroluminescent displays

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