Dr. Doohoon Goo Profile

Dr. Doohoon Goo

Senior Engineer at Cymer LLC

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Author

Publications (12)

Proceedings Article | 18 March 2009 Paper

Assessment of full-chip level EUV optical correction for sub-40nm memory device

Jeonghoon Lee, Insung Kim, Doohoon Goo, Joo-on Park, Changmin Park, Jinhong Park, Jeongho Yeo, Seongwoon Choi, Woosung Han

Proceedings Volume 7271, 727142 (2009) https://doi.org/10.1117/12.813996

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Optical proximity correction, Reflectivity, Scanners, Critical dimension metrology, EUV optics, Optical calibration, Cadmium

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Proceedings Article | 18 March 2009 Paper

The application of EUV lithography for 40nm node DRAM device and beyond

Joo-on Park, Chawon Koh, Doohoon Goo, InSung Kim, Changmin Park, Jeonghoon Lee, JinHong Park, JeongHo Yeo, Seong-Woon Choi, Chan-hoon Park

Proceedings Volume 7271, 727114 (2009) https://doi.org/10.1117/12.814001

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Etching, Photomasks, Semiconducting wafers, Scanners, Optical proximity correction, Light sources, Resistance

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Proceedings Article | 4 December 2008 Paper

CD uniformity improvement for 3x nm node devices

Chang-Min Park, Hyun-Byuk Kim, Hyung-Do Kim, Hyun-Woo Kim, Cheol-Hong Kim, Joo-On Park, Doohoon Goo, Jeongho Yeo, Seong-Woon Choi, Woo-Sung Han, Min-Su Choi, Sung-Woo Hwang

Proceedings Volume 7140, 714024 (2008) https://doi.org/10.1117/12.804627

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Double patterning technology, Lithography, Etching, Semiconductors, Control systems, Spatial resolution, Transistors

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Proceedings Article | 4 December 2008 Paper

Methodology of flare modeling and compensation in EUVL

Insung Kim, Hoyoung Kang, Changmin Park, Joo-On Park, Jeonghoon Lee, Jinhong Park, Doohoon Goo, Jeongho Yeo, Seong-Woon Choi, Woosung Han

Proceedings Volume 7140, 714009 (2008) https://doi.org/10.1117/12.804673

KEYWORDS: Point spread functions, Fractal analysis, Extreme ultraviolet, Lithography, Optical proximity correction, Photomasks, Critical dimension metrology, Modulation transfer functions, Convolution, Cadmium

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Proceedings Article | 12 April 2007 Paper

Resist evaluation for EUV application at ASET

Doohoon Goo, Yuusuke Tanaka, Yukiko Kikuchi, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6519, 65191M (2007) https://doi.org/10.1117/12.711980

KEYWORDS: Line width roughness, Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Modulation, Printing, Photoresist processing, Additive manufacturing

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Although EUV lithography has been prepared for next generation litho-technique for several years, there are still lots of obstacles on its way. Especially, phase defect from the mask, and immaturity in the resist should be solved as soon as possible because they are directly related to realizing patterns on the wafer. ASET has been focusing on these two problems, that is, the mask-related defect control and the resist screening for EUV application. In this study, we concentrate on the resist evaluation for the EUV lithography application, mainly commercial CAR (Chemically- Amplified Resist) type resist, for example, ArF resist based on polymethacrylate and KrF resist based on poly(4- hydroxystyrene) (PHS). We screened tens of resists in viewpoint of resolution, photo-speed, and LWR (Line Width Roughness). We used two METs (Micro-Exposure Tools). The one is HiNA in ASET and the other is MET in Lawrence Berkeley National Lab. (LBNL) to evaluate resist. And we used EUV masks fabricated by DNP and ASET. Some resist showed modulation on the wafer for 28nm-hp line and space pattern and some resist showed very high photo-speed about 5mJ/cm². Photo-speed could be improved about 25% by controlling the amount of additives, PAG and quencher. However, improvement in photo-speed caused degradation in resolution. This means there are trade-off relation between resolution and photo-speed. And we also evaluated polymer-bound PAG resist, which showed new possibility for EUV resist. And we encountered unexpected problem, pattern lifting, which was solved by using bufferlayer to increase attachment force between resist and wafer surface. We conclude that polymer bound PAG resist is a good approach to lower LWR of resist for EUVL application and bufferlayer tuning and matching with resist is also needed for low LWR. The EUVL masks were fabricated by Dai Nippon Printing Co., Ltd. The HiNA set-3 projection optics were developed and provided by Nikon Corporation. This work was supported by NEDO.

Proceedings Article | 16 March 2007 Paper

Fidelity of rectangular patterns printed with 0.3-NA MET optics

Yuusuke Tanaka, Yukiko Kikuchi, DooHoon Goo, Iwao Nishiyama

Proceedings Volume 6517, 65172L (2007) https://doi.org/10.1117/12.711900

KEYWORDS: Diffusion, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, EUV optics, Photoresist processing, Optical lithography, Lithography, Semiconducting wafers

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Proceedings Article | 20 October 2006 Paper

Evaluation of bi-layer TaSix absorber on buffer for EUV mask

Koichiro Kanayama, Shinpei Tamura, Yasushi Nishiyama, Masashi Kawashita, Tadashi Matsuo, Akira Tamura, Susumu Nagashige, Kenji Hiruma, Doohoon Goo, Iwao Nishiyama

Proceedings Volume 6349, 63493A (2006) https://doi.org/10.1117/12.686388

KEYWORDS: Extreme ultraviolet, Gallium, Printing, Photomasks, Atomic force microscopy, Reflectivity, Silicon, Etching, Transparency, Inspection

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Proceedings Article | 24 March 2006 Paper

Printability of contact-hole patterns in EUVL using 0.3-NA HiNA optics

Yuusuke Tanaka, Hiroaki Oizumi, Yukiko Kikuchi, DooHoon Goo, Fumiaki Kumasaka, Iwao Nishiyama

Proceedings Volume 6151, 61512S (2006) https://doi.org/10.1117/12.656126

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical lithography, Lithography, Extreme ultraviolet, Binary data, Optical proximity correction, Projection systems, Printing, Mirrors

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Proceedings Article | 24 March 2006 Paper

Sub-32nm patterning using EUVL at ASET

Doohoon Goo, Yuusuke Tanaka, Yukiko Kikuchi, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6151, 61512R (2006) https://doi.org/10.1117/12.656124

KEYWORDS: Extreme ultraviolet lithography, Line width roughness, Photomasks, Extreme ultraviolet, Lithography, Immersion lithography, Semiconducting wafers, Resolution enhancement technologies, Optical lithography, Nanoimprint lithography

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Proceedings Article | 22 March 2006 Paper

Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools

Yukiko Kikuchi, Yuusuke Tanaka, Hiroaki Oizumi, Fumiaki Kumasaka, DooHoon Goo, Iwao Nishiyama

Proceedings Volume 6151, 615107 (2006) https://doi.org/10.1117/12.655106

KEYWORDS: Line edge roughness, Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Photomasks, Optics manufacturing, Reflectivity, Semiconducting wafers, Manufacturing, Imaging systems

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Proceedings Article | 24 May 2004 Paper

Successful application of angular scatterometry to process control in sub-100-nm DRAM device

Jin-ah Kim, Seong-Jin Kim, Soo-Bok Chin, Seok-Hwan Oh, Doo-Hoon Goo, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han, Joo-Tae Moon, Christopher Raymond, Michael Littau, Byungjoo Youn, Chang-Jin Sohn

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536312

KEYWORDS: Scatterometry, Critical dimension metrology, Scanning electron microscopy, Scatter measurement, Metrology, Semiconducting wafers, Light scattering, Process control, Light sources, Time metrology

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Proceedings Article | 26 June 2003 Paper

ArF issues of 90-nm-node DRAM device integration

Doo-Hoon Goo, Byeong-Soo Kim, Joon-Soo Park, Kwang-Sub Yoon, Jung-Hyeon Lee, Han-Ku Cho, Woo-Sung Han, Joo-Tae Moon

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485473

KEYWORDS: Line edge roughness, Vacuum ultraviolet, Optical proximity correction, Atrial fibrillation, Photoresist processing, Semiconductors, Etching, Lithography, Semiconducting wafers, Nanoimprint lithography

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Showing 5 of 12 publications

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