Dr. Joo-On Park Profile

Dr. Joo-On Park

Project Engineer EUV at SUNY Poly SEMATECH

SPIE Involvement:

Author

Publications (14)

Proceedings Article | 3 April 2010 Paper

Nanoimprint template fabrication using wafer pattern for sub-30nm

C. Park, K. Kim, Y. Lee, K. Cho, J. Park, In Kim, J. Yeo, S. Choi, D. Lee, B. Lee, S. Hwang

Proceedings Volume 7637, 76371R (2010) https://doi.org/10.1117/12.846481

KEYWORDS: Nanoimprint lithography, Semiconducting wafers, Electron beam lithography, Lithography, Line width roughness, Etching, Photomasks, Silicon, Optical lithography, Quartz

Read Abstract +

Proceedings Article | 20 March 2010 Paper

The analysis of EUV mask defects using a wafer defect inspection system

Kyoung-Yong Cho, Joo-On Park, Changmin Park, Young-Mi Lee, In-Yong Kang, Jeong-Ho Yeo, Seong-Woon Choi, Chan-Hoon Park, Steven Lange, SungChan Cho, Robert Danen, Gregory Kirk, Yeon-Ho Pae

Proceedings Volume 7636, 76361E (2010) https://doi.org/10.1117/12.846482

KEYWORDS: Semiconducting wafers, Photomasks, Line width roughness, Inspection, Wafer inspection, Scanning electron microscopy, Defect detection, Signal to noise ratio, Extreme ultraviolet lithography, Line edge roughness

Read Abstract +

Proceedings Article | 20 March 2010 Paper

A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection

Sungmin Huh, Liping Ren, David Chan, Stefan Wurm, Kenneth Goldberg, Iacopo Mochi, Toshio Nakajima, Masahiro Kishimoto, Byungsup Ahn, Inyong Kang, Joo-on Park, Kyoungyong Cho, Sang-in Han, Thomas Laursen

Proceedings Volume 7636, 76360K (2010) https://doi.org/10.1117/12.846922

KEYWORDS: Photomasks, Wafer inspection, Inspection, Particles, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Mask making, High volume manufacturing

Read Abstract +

Proceedings Article | 18 March 2010 Paper

Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Chawon Koh, Jacque Georger, Liping Ren, George Huang, Frank Goodwin, Stefan Wurm, Dominic Ashworth, Warren Montgomery, Bill Pierson, Joo-on Park, Patrick Naulleau

Proceedings Volume 7636, 763604 (2010) https://doi.org/10.1117/12.846629

KEYWORDS: Optical lithography, Extreme ultraviolet, Manufacturing, Line width roughness, Polymers, Etching, Extreme ultraviolet lithography, Resistance, Glasses, Photoresist processing

Read Abstract +

Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. We characterized EUVL readiness of the three major resist platforms for sub-30 nm half-pitch (HP) manufacturability using a full-field ASML alpha demo tool (ADT) scanner and studied the extendibility of EUV chemically amplified resist (CAR). Based on an "M-factor" analysis, which shows the maturity of EUV resist for 28 nm HP manufacturability, a polymer-bound photoacid generator (PAG) resist was 78% ready, a PHS hybrid resist was 81%, and a molecular glass EUV resist was 58%. The polymer-bound resist showed good resolution for 25 nm HP using the ASML ADT. It also demonstrated fair linewidth roughness (LWR) and a good lithographic process margin of 18% exposure latitude (EL) and 160 nm depth of field (DOF) for 28 nm HP patterning compared with the other resist platforms, but its resist collapse and etch resistance need to be improved for manufacturability. PHS hybrid resist showed a fair etch resistance and resist collapse performance compared to the other resist platforms, but LWR needs to be improved. The molecular resist needs to mature further, especially in resist collapse and iso-dense (ID) bias. When considering its many strong points and control of lower acid diffusion, the polymer-bound PAG resist appears to be the most suitable platform for manufacturability and EUV CAR extension. We therefore would like to encourage the development of next generation polymer-bound PAG resist with a higher etch resistance. A process window of 80 nm DOF was demonstrated for 26 nm HP patterning and a measurable DOF for 25 nm HP was achieved with the polymer-bound PAG resist. Resist collapse and LWR are major issues for 22 nm HP patterning in manufacturing. LWR improvements were achieved with various techniques, and resist collapse was greatly improved with a novel approach that uses a residual resist layer. 16 nm HP line/space (L/S) image modulation and 18 nm HP resolution were demonstrated with an EUV CAR, indicating that EUV CAR could be extended to sub-20 nm HP patterning.

Proceedings Article | 18 March 2009 Paper

Assessment of full-chip level EUV optical correction for sub-40nm memory device

Jeonghoon Lee, Insung Kim, Doohoon Goo, Joo-on Park, Changmin Park, Jinhong Park, Jeongho Yeo, Seongwoon Choi, Woosung Han

Proceedings Volume 7271, 727142 (2009) https://doi.org/10.1117/12.813996

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Optical proximity correction, Reflectivity, Scanners, Critical dimension metrology, EUV optics, Optical calibration, Cadmium

Read Abstract +

Proceedings Article | 18 March 2009 Paper

Assessment of EUV resist readiness for 32-nm hp manufacturing and extendibility study of EUV ADT using state-of-the-art resist

Chawon Koh, Liping Ren, Jacque Georger, Frank Goodwin, Stefan Wurm, Bill Pierson, Joo-On Park, Tom Wallow, Todd Younkin, Patrick Naulleau

Proceedings Volume 7271, 727124 (2009) https://doi.org/10.1117/12.814314

KEYWORDS: Semiconducting wafers, Manufacturing, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Photoresist processing, Optical lithography, Photomasks, Electroluminescence, Critical dimension metrology

Read Abstract +

Proceedings Article | 18 March 2009 Paper

The application of EUV lithography for 40nm node DRAM device and beyond

Joo-on Park, Chawon Koh, Doohoon Goo, InSung Kim, Changmin Park, Jeonghoon Lee, JinHong Park, JeongHo Yeo, Seong-Woon Choi, Chan-hoon Park

Proceedings Volume 7271, 727114 (2009) https://doi.org/10.1117/12.814001

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Etching, Photomasks, Semiconducting wafers, Scanners, Optical proximity correction, Light sources, Resistance

Read Abstract +

Proceedings Article | 4 December 2008 Paper

Methodology of flare modeling and compensation in EUVL

Insung Kim, Hoyoung Kang, Changmin Park, Joo-On Park, Jeonghoon Lee, Jinhong Park, Doohoon Goo, Jeongho Yeo, Seong-Woon Choi, Woosung Han

Proceedings Volume 7140, 714009 (2008) https://doi.org/10.1117/12.804673

KEYWORDS: Point spread functions, Fractal analysis, Extreme ultraviolet, Lithography, Optical proximity correction, Photomasks, Critical dimension metrology, Modulation transfer functions, Convolution, Cadmium

Read Abstract +

Proceedings Article | 4 December 2008 Paper

CD uniformity improvement for 3x nm node devices

Chang-Min Park, Hyun-Byuk Kim, Hyung-Do Kim, Hyun-Woo Kim, Cheol-Hong Kim, Joo-On Park, Doohoon Goo, Jeongho Yeo, Seong-Woon Choi, Woo-Sung Han, Min-Su Choi, Sung-Woo Hwang

Proceedings Volume 7140, 714024 (2008) https://doi.org/10.1117/12.804627

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Double patterning technology, Lithography, Etching, Semiconductors, Control systems, Spatial resolution, Transistors

Read Abstract +

Proceedings Article | 3 April 2008 Paper

Benchmarking of commercial EUVL resists at SEMATECH

Andy Ma, Joo-on Park, Kim Dean, Stefan Wurm, Patrick Naulleau

Proceedings Volume 6921, 69213O (2008) https://doi.org/10.1117/12.775037

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, Scanning electron microscopy, Lithography, Real-time computing, Electroluminescence, Head-mounted displays, Photoresist processing

Read Abstract +

Proceedings Article | 3 April 2008 Paper

Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool

Patrick Naulleau, Christopher Anderson, Jerrin Chiu, Kim Dean, Paul Denham, Kenneth Goldberg, Brian Hoef, Sungmin Huh, Gideon Jones, Bruno LaFontaine, Andy Ma, Dimitra Niakoula, Joo-on Park, Tom Wallow

Proceedings Volume 6921, 69213N (2008) https://doi.org/10.1117/12.773833

KEYWORDS: Line edge roughness, Monochromatic aberrations, Extreme ultraviolet, Photomasks, Printing, Lithography, Extreme ultraviolet lithography, Semiconducting wafers, Projection systems, Wafer-level optics

Read Abstract +

Proceedings Article | 12 May 2005 Paper

The application criterion of model-based optical proximity correction in a low k1 process

Doo-Youl Lee, In-Sung Kim, Sung-Gon Jung, Myoung-Ho Jung, Joo-On Park, Seok-Hwan Oh, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599013

KEYWORDS: Optical proximity correction, Model-based design, Resolution enhancement technologies, Lithography, Scanning electron microscopy, Photography, Process modeling, Photomasks, Scanners, Semiconducting wafers

Read Abstract +

Proceedings Article | 24 May 2004 Paper

Assessments on process parameters' influences to the proximity correction

Eun-Mi Lee, Sung-Woo Lee, Doo-Youl Lee, Soo-Han Choi, Joo-On Park, Sung-Gon Jung, Gi-Sung Yeo, Jung-Hyeon Lee, Han-Ku Cho, Woo-Sung Han

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536341

KEYWORDS: Optical proximity correction, Critical dimension metrology, Atrial fibrillation, Cadmium, Resolution enhancement technologies, Data modeling, Logic devices, Photomasks, Line edge roughness, Scanning electron microscopy

Read Abstract +

Proceedings Article | 14 September 2001 Paper

Feasibility study of printing sub-100-nm with ArF lithography

Seok-Kyun Kim, Jong-Gyun Hong, Joo-On Park, Tea-Jun Yoo, Yoon-Suk Hyun, Cheol-Kyu Bok, Ki-Soo Shin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435721

KEYWORDS: Lithography, Resolution enhancement technologies, Photomasks, Printing, Optical lithography, Photoresist processing, Lithographic illumination, Etching, Data modeling, Transistors

Read Abstract +

Showing 5 of 14 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years