Dr. Debi Prasad Panda Profile

Dr. Debi Prasad Panda

SPIE Involvement:

Author

Area of Expertise:

Molecular Beam Epitaxy , Photoluminescence , Quantum Dot Infrared Photodetector , Quantum Dot Solar Cell

Publications (53)

Proceedings Article | 5 October 2023 Poster + Paper

A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure

Manas Ranjan Mantri, Debi Prasad Panda, Ravindra Kumar, Samishta Choudhary, Subhananda Chakrabarti

Proceedings Volume 12651, 126510B (2023) https://doi.org/10.1117/12.2677964

KEYWORDS: Heterojunctions, Quantum dots, Gallium, Gallium arsenide, Aluminum, Indium arsenide, Optical properties, Quantum numbers, Optical surfaces, Indium gallium arsenide

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Proceedings Article | 5 October 2023 Poster + Paper

In-situ tailoring of band alignment between strain-coupled surface and buried InAs/GaAs quantum dots for sensor applications

Manas Ranjan Mantri, Debi Prasad Panda, Rajib Saha, Subhananda Chakrabarti

Proceedings Volume 12651, 126510A (2023) https://doi.org/10.1117/12.2677942

KEYWORDS: Quantum dots, Indium arsenide, Gallium arsenide, Heterojunctions, Raman spectroscopy, Quantum sensors, Atomic force microscopy, Monolayers, Signal processing, Quantum numbers

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Proceedings Article | 5 March 2022 Poster + Paper

High energy proton implantation effect on the emission wavelength and strain phenomenon of strain coupled InAs/In(Ga)As submonolayer (SML) QDs and Stranski-Krastanov (SK) QDs

Samishta Choudhary, Debabrata Das, Saurabh Upadhyay, Debiprasad Panda, Anindya Dutta, Subhananda Chakrabarti

Proceedings Volume 12010, 120100F (2022) https://doi.org/10.1117/12.2610567

KEYWORDS: Gallium arsenide, Quantum dots, Indium arsenide, Ions, Heterojunctions, Luminescence, Ion implantation, Quantum wells, Electronics, Photodetectors

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Proceedings Article | 1 August 2021 Poster + Presentation + Paper

Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations

Suryansh Dongre, Debiprasad Panda, Debabrata Das, SanowarAlam Gazi, Ravindra Kumar, Mahitosh Biswas, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11802, 118020W (2021) https://doi.org/10.1117/12.2594397

KEYWORDS: Heterojunctions, Indium arsenide, Short wave infrared radiation, Gallium arsenide, Photodetectors, Luminescence, 3D modeling

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Proceedings Article | 18 April 2021 Presentation + Paper

Optical and structural investigation of multilayer InAs SK QDs with In0.15Ga0.85As strain-reducing layer electronically coupled to SML QDs grown by molecular beam epitaxy

Raveesh Gourishetty, Debi Prasad Panda, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11771, 117710T (2021) https://doi.org/10.1117/12.2589251

KEYWORDS: Indium arsenide, Molecular beam epitaxy, Gallium arsenide, Crystals, X-ray diffraction, Quantum electronics, Quantum dots, Optoelectronic devices, Luminescence, Indium

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The effect of thin In0.15Ga0.85As strain-reducing layer on the structural and optical characteristics of multilayer InAs/In(Ga)As Stranski-Krastanov (SK) quantum dots (QDs) electronically coupled to Sub monolayer (SML) QDs has been investigated. The capping of In_0.15Ga_0.85As material over the InAs SK QDs reduces the out-diffusion of Indium atoms from the InAs dot resulting in an increased QD size. Moreover, the In_0.15Ga_0.85As material has a lattice constant between that of InAs and GaAs that aids in undulated transition of strain from the dot to the capping material and the GaAs spacer helping the growth of multilayer QD structure with high crystalline quality. Five different heterostructures are used in this study by varying the number of SK QD layers i.e., single layer (x1), bi layer (x2), penta layer (x5), hepta layer (x7) and deca layer (x10) which are grown on the same six stack SML QDs. A growth strategy has been employed while growing these multilayer SK QDs such that similar size QDs are grown even for deca layer structure with superior dot size homogeneity. The emission full width at half maxima computed at a temperature of 19 K came out to be ~50 nm for the penta layer structure indicating formation of uniform size QDs. The SK and SML QD sizes are chosen such that the ground eigen state of SML QDs coincide with excited states of SK QDs allowing the possibility of carriers to tunnel from the SML to SK QDs. The use of In0.15Ga0.85As capping led to a red shift in the PL peak position as compared to the structure without In0.15Ga0.85As capping. High-Resolution X-Ray Diffraction (HRXRD) measurements are carried out on these structures to understand the structural characteristics of multilayer SK on SML structures. The HRXRD results show that the hepta layer and the deca layer structures have the minimum strain with best crystalline quality. Considering both the optical and the structural characteristics, it has been concluded that the growth strategy helps in growing similar size QDs for the multilayer structures which can be used in various optoelectronic device applications.

Proceedings Article | 18 April 2021 Presentation + Paper

Influence of Sb composition on the band alignment and optical characteristics of strain coupled vertically aligned InAs/GaAsSb quantum dots

Raveesh Gourishetty, Saranya Reddy Shriram, Debi Prasad Panda, Subhananda Chakrabarti

Proceedings Volume 11771, 117710R (2021) https://doi.org/10.1117/12.2589255

KEYWORDS: Antimony, Indium arsenide, Luminescence, Quantum dots, Optoelectronic devices, Optical simulations, Infrared detectors, Gallium arsenide

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The influence of the Sb composition both on the band-alignment and the optical characteristics of strain-coupled vertically aligned InAs/GaAsSb Stranski-Krastanov (SK) quantum dots (QDs) embedded on six stack InAs/In_0.15Ga_0.85As Sub-monolayer (SML) matrix has been studied using nextnano simulation tool. A ten-layer strain-coupled InAs SK QDs electronically coupled to six stack SML QDs which has been the optimized structure is utilized in this study. Four different structures with Sb composition of 10%, 14%, 18% and 22% are chosen as a capping layer over InAs QDs and it is found that a transition in the band-alignment from type-I to type-II occurs when the Sb composition is increased above 14%. The optical characteristics have been simulated for these heterostructures which showed a red shift in the photoluminescence (PL) peak values with increase in the Sb composition. The PL peak value of ~1035 nm has been validated with the experimental PL data for the ten-layer InAs/GaAs SK QDs grown on six stack SML QDs without GaAsSb capping. With the similar dot size, the PL peak occurred at ~1115 nm, ~1159 nm, ~1209 nm and ~1284 nm, respectively, for 10%, 14%, 18% and 22% Sb composition structures. Investigation of electron and hole eigen states has been done for these structures. The usage of GaAsSb capping layer (strain reducing layer: SRL) over the InAs SK QDs allows an undulated strain transition from one SK QD layer to the other. The hydrostatic and the biaxial parts of the strain are estimated and a decrease in the hydrostatic compressive strain in the QDs has been observed with increase in the Sb composition. An increase in the biaxial strain with Sb composition has been noticed which result in lowering of the energy band gap and a red shift in the PL emission wavelength. Along with type-II band alignment, the low hydrostatic strain with 22% Sb composition facilitates lower dark current and also a red shifted PL results from ~1035 nm to ~1284 nm shows a promising direction for the realization of several optoelectronic device applications.

Proceedings Article | 8 March 2021 Poster + Paper

The electronic interaction between vertically coupled Stranski-Krastanov and submonolayer quantum dots: a detailed investigation of carrier transitions and correlation with improved NIR energy conversion efficiency

Debabrata Das, Samishta Choudhary, Debiprasad Panda, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11681, 1168112 (2021) https://doi.org/10.1117/12.2578990

KEYWORDS: Quantum dots, Near infrared, Energy conversion efficiency, Solar energy, Solar cells, Photons, Quantum efficiency, Photovoltaics, Energy harvesting, Carrier dynamics

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Proceedings Article | 5 March 2021 Poster + Paper

Optimization of InAs dot-in-well structure for superior structural and optical performance

Debiprasad Panda, Anuja Singh, Ajay Kumar, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11680, 116801M (2021) https://doi.org/10.1117/12.2583388

KEYWORDS: Indium arsenide, Heterojunctions, Quantum dots, Mid-IR, Absorption, Quantum well infrared photodetectors, Photodetectors, Oscillators, Optical properties, Luminescence

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Proceedings Article | 21 August 2020 Poster + Paper

Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory

Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Raveesh Gourishetty, Subhananda Chakrabarti

Proceedings Volume 11465, 114651A (2020) https://doi.org/10.1117/12.2568820

KEYWORDS: Indium arsenide, Gallium arsenide, Interfaces, Quantum dots, Indium gallium arsenide, Heterojunctions, Luminescence

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Proceedings Article | 21 August 2020 Poster + Paper

Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots

Manas Mantri, Debiprasad Panda, Debabrata Das, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651C (2020) https://doi.org/10.1117/12.2568847

KEYWORDS: Indium arsenide, Quantum dots, Gallium arsenide, Atomic force microscopy, Heterojunctions, Luminescence, Sensors

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Proceedings Article | 21 August 2020 Poster + Paper

Effect of ex-situ annealing on coupled hybrid InAs Stranski-Krastanov (SK) on Submonolayer (SML) Quantum Dot heterostructures with different spacer layer thickness

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11465, 114651E (2020) https://doi.org/10.1117/12.2569012

KEYWORDS: Annealing, Indium arsenide, Heterojunctions, Quantum dots, Gallium arsenide, Luminescence, X-ray diffraction, Optoelectronics

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Proceedings Article | 21 August 2020 Poster + Paper

A novel heterostructure with multilayer Stranski-Krastanov QDs heterogeneously coupled to Submonolayer QDs for enhanced optical and material characteristics

Raveesh Gourishetty, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651H (2020) https://doi.org/10.1117/12.2569022

KEYWORDS: Heterojunctions, Luminescence, Quantum dots, Gallium arsenide

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Proceedings Article | 21 August 2020 Poster + Paper

Enhanced performance of InAs/InGaAs dot-in-well heterostructure through varying capping thickness

Ajay Kumar, Saraswathy Venugopal, Debiprasad Panda, Manas Mantri, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11465, 114651I (2020) https://doi.org/10.1117/12.2569078

KEYWORDS: Indium gallium arsenide, Raman spectroscopy, Heterojunctions, Indium arsenide, Gallium arsenide, Quantum dots, Phonons, Optical properties, Luminescence

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Proceedings Article | 1 April 2020 Presentation + Paper

Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers

Saranya Reddy Shriram, Sanowar Alam Gazi, Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452X (2020) https://doi.org/10.1117/12.2555871

KEYWORDS: Gallium arsenide, Heterojunctions, Quantum dots, Optical properties, Raman spectroscopy, Phonons, Indium arsenide, Luminescence, X-ray diffraction

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Proceedings Article | 1 April 2020 Presentation + Paper

Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures

Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11345, 113452W (2020) https://doi.org/10.1117/12.2555864

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Optical properties, Indium, Arsenic, Interfaces

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Proceedings Article | 1 April 2020 Presentation + Paper

Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer

Ravinder Kumar , Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11345, 113452V (2020) https://doi.org/10.1117/12.2554181

KEYWORDS: Gallium arsenide, Germanium, Indium arsenide, Quantum dots, Silicon, Epitaxy

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Proceedings Article | 2 March 2020 Presentation + Paper

Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures with higher (0.1ML/sec) and lower (0.05ML/sec) growth rates

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Suryansh Dongre, Subhananda Chakrabarti

Proceedings Volume 11291, 1129104 (2020) https://doi.org/10.1117/12.2546367

KEYWORDS: Quantum dots, Heterojunctions, Gallium arsenide, Indium arsenide, Optoelectronics, X-ray diffraction, Optoelectronic devices, Luminescence

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Proceedings Article | 2 March 2020 Paper

Optimization of strain-coupled InAs QD layers in P-i-P infrared photodetector heterostructures

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Abhishek Kumar, Nivedita Pandey, Subhananda Chakrabarti

Proceedings Volume 11291, 112910P (2020) https://doi.org/10.1117/12.2542565

KEYWORDS: Heterojunctions, Indium arsenide, Photodetectors, Luminescence, Infrared radiation, Gallium, Gallium arsenide, Quantum dots

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Proceedings Article | 2 March 2020 Paper

Submonolayer quantum dots in P-i-P configuration: study on effects of monolayer coverage and stacking variations

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Q (2020) https://doi.org/10.1117/12.2542569

KEYWORDS: Heterojunctions, Quantum dots, Indium arsenide, Luminescence, Gallium arsenide, Gallium, Beryllium

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Proceedings Article | 2 March 2020 Paper

A comparative analysis between heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) and Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Y (2020) https://doi.org/10.1117/12.2546336

KEYWORDS: Heterojunctions, Gallium arsenide, Indium arsenide, Quantum dots, Optoelectronics, X-ray diffraction, Quantum wells, Luminescence

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Proceedings Article | 2 March 2020 Presentation + Paper

Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots

Manas Ranjan Mantri, Debiprasad Panda, Sanowar Alam Gazi, Suryansh Dongre, Subhananda Chakrabarti

Proceedings Volume 11291, 1129105 (2020) https://doi.org/10.1117/12.2547134

KEYWORDS: Indium arsenide, Gallium arsenide, Quantum dots, Heterojunctions, Luminescence, Optical properties, Diffusion, Near infrared, Optoelectronic devices

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Proceedings Article | 2 March 2020 Paper

Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer

Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Suryansh Dongre, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Z (2020) https://doi.org/10.1117/12.2546384

KEYWORDS: Silicon, Gallium arsenide, Quantum dots, Indium arsenide, Epitaxy, Germanium

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Proceedings Article | 2 March 2020 Paper

Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910O (2020) https://doi.org/10.1117/12.2542403

KEYWORDS: Heterojunctions, Indium arsenide, Gallium arsenide, Luminescence, Indium gallium arsenide, Quantum dots, Phonons

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Proceedings Article | 9 September 2019 Paper

The enhancement in luminescence property of chemically passivated near surface quantum well and quantum dots

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol Pansare, Subhananda Chakrabarti

Proceedings Volume 11085, 110851O (2019) https://doi.org/10.1117/12.2530898

KEYWORDS: Quantum wells, Nanostructures, Heterojunctions, Gallium arsenide, Luminescence, Quantum dots, Sulfur, Gallium, Optical properties, Indium arsenide

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Proceedings Article | 9 September 2019 Paper

Effect of substrate temperature variation on the structural and optical properties of self assembled InAs quantum dots

Abhijeet Aanand, Suryansh Dongre, Sanowar Gazi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 110851D (2019) https://doi.org/10.1117/12.2529049

KEYWORDS: Quantum dots, Heterojunctions, Optical properties, Gallium arsenide, Indium arsenide, Indium, Atomic force microscopy, Luminescence

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Proceedings Article | 9 September 2019 Paper

A detailed investigation on the impact of variation in monolayer coverage on optical properties of InAs/GaAs multilayer quantum dot heterostructure

Aditya Patel, Debiprasad Panda, Suryansh Dongre, Sanowar Alam Gazi, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11085, 110851A (2019) https://doi.org/10.1117/12.2529014

KEYWORDS: Indium arsenide, Luminescence, Quantum dots, Gallium arsenide, Heterojunctions, Optical properties, X-ray diffraction

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Proceedings Article | 9 September 2019 Presentation

Impact of various in-situ and ex-situ techniques on the optical, structural, and device performance of In(Ga)As/GaAs quantum dot based heterostructures and devices (Conference Presentation)

Subhananda Chakrabarti, Debiprasad Panda, Debabrata Das

Proceedings Volume 11085, 1108508 (2019) https://doi.org/10.1117/12.2528880

KEYWORDS: Quantum dots, Heterojunctions

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Proceedings Article | 9 September 2019 Paper

Investigation of various capping layer configuration on heterogeneously coupled SML on SK quantum dots heterostructure

Pravin Raut, Rajkumar Ramavath, Jhuma Saha, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108517 (2019) https://doi.org/10.1117/12.2528893

KEYWORDS: Gallium, Heterojunctions, Aluminum, Quantum dots, Gallium arsenide, Bismuth, Photodetectors, Optoelectronic devices, Luminescence, Near infrared

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Proceedings Article | 9 September 2019 Paper

Optical and structural investigation of ex-situ passivated strain coupled InAs surface quantum dots

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol Pansare, Subhananda Chakrabarti

Proceedings Volume 11085, 110851N (2019) https://doi.org/10.1117/12.2530894

KEYWORDS: Indium arsenide, Quantum dots, Atomic force microscopy, Heterojunctions, Oxides, Sensors, Gallium arsenide, Luminescence, Etching

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Proceedings Article | 9 September 2019 Paper

Influence of quaternary (In0.21Al0.21Ga0.58As) capping on the performance of InAs quantum dot infrared photodetector

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Jhuma Saha, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 11085, 110851K (2019) https://doi.org/10.1117/12.2529887

KEYWORDS: Quantum dots, Gallium arsenide, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Aluminum, Gallium

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Proceedings Article | 9 September 2019 Paper

The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots

Rishabh Dahale, Abhijeet Aanand, Sanowar Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Anubhav Agarwal, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108519 (2019) https://doi.org/10.1117/12.2529006

KEYWORDS: Atomic force microscopy, Optical properties, Indium arsenide, Quantum dots, Gallium arsenide, Heterojunctions, Molecular beam epitaxy

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Proceedings Article | 9 September 2019 Paper

The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots

Anubhav Agarwal, Abhijeet Aanand, Sanowar Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Rishabh Dahale, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108518 (2019) https://doi.org/10.1117/12.2528996

KEYWORDS: Quantum dots, Luminescence, Gallium arsenide, Indium, Indium arsenide, Spectroscopy, Nanostructures, Arsenic

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Proceedings Article | 28 May 2019 Presentation + Paper

MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, Subhananda Chakrabarti

Proceedings Volume 10929, 109290C (2019) https://doi.org/10.1117/12.2508464

KEYWORDS: Heterojunctions, Germanium, Gallium arsenide, Quantum dots, Silicon, Optical properties, Optoelectronics integration, Luminescence, Optoelectronic devices

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Proceedings Article | 4 March 2019 Presentation + Paper

Influence of modulation doping on p-i-p quantum-dots (InAs/GaAs)-based infrared detector performance

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Vinayak Chavan, Pravin Raut, Abhijeet Aanand, Subhananda Chakrabarti

Proceedings Volume 10929, 109290K (2019) https://doi.org/10.1117/12.2508533

KEYWORDS: Modulation, Quantum dots, Indium arsenide, Doping, Infrared radiation, Gallium arsenide, Infrared detectors, Luminescence, Photodetectors

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Proceedings Article | 4 March 2019 Presentation + Paper

MBE-grown GaAs/AlGaAs multiple quantum wells on Ge substrate

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 10929, 1092905 (2019) https://doi.org/10.1117/12.2508508

KEYWORDS: Quantum wells, Germanium, Gallium arsenide, Silicon, Nanostructures, Interfaces, X-ray diffraction, Gallium, Annealing, Heterojunctions

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Proceedings Article | 4 March 2019 Presentation + Paper

Effect of vertical coupling on the performance of mid-infrared InAs-QDIP

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290E (2019) https://doi.org/10.1117/12.2508482

KEYWORDS: Heterojunctions, Gallium arsenide, Quantum dots, Mid-IR, Photodetectors, Raman spectroscopy, Infrared radiation

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Proceedings Article | 4 March 2019 Paper

Investigation of carrier-confinement and dark current minimization in In0.5Ga0.5As QDIP with the incorporation of In0.21Al0.21Ga0.58As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 1092910 (2019) https://doi.org/10.1117/12.2508488

KEYWORDS: Aluminum, Gallium, Indium gallium arsenide, Quantum dots, Heterojunctions, Luminescence, Infrared radiation, Gallium arsenide, Photodetectors

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Proceedings Article | 4 March 2019 Paper

Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290Z (2019) https://doi.org/10.1117/12.2508467

KEYWORDS: Indium gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Luminescence, Gallium arsenide, Mid-IR, Satellites, Infrared photography

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Proceedings Article | 4 March 2019 Paper

Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 10929, 1092911 (2019) https://doi.org/10.1117/12.2508615

KEYWORDS: Gallium arsenide, Modulation, Quantum dots, Infrared detectors, Short wave infrared radiation, Infrared radiation, Mid-IR, Aluminum, Luminescence

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Proceedings Article | 4 March 2019 Paper

Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 10929, 1092912 (2019) https://doi.org/10.1117/12.2508669

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Infrared radiation, Quantum dots, Infrared photography, Photodetectors, Short wave infrared radiation, Luminescence

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Proceedings Article | 4 March 2019 Presentation + Paper

Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Vinayak Chavan, Pravin Raut, Abhijeet Aanand, Subhananda Chakrabarti

Proceedings Volume 10929, 109290G (2019) https://doi.org/10.1117/12.2508643

KEYWORDS: Modulation, Doping, Gallium arsenide, Quantum dots, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Luminescence

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Proceedings Article | 1 March 2019 Presentation + Paper

Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Mahitosh Biswas, Sourabh Upadhyay, Debabrata Das, Songrui Zhao, Zetian Mi, Subhananda Chakrabarti

Proceedings Volume 10918, 109180A (2019) https://doi.org/10.1117/12.2508490

KEYWORDS: Nanowires, Ultraviolet radiation, Silicon, Ozone, Ion implantation, Scanning electron microscopy, Molecular beam epitaxy

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Proceedings Article | 14 May 2018 Paper

Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Harshal Rawool, Subhananda Chakrabarti

Proceedings Volume 10624, 106241Q (2018) https://doi.org/10.1117/12.2305289

KEYWORDS: Quantum dots, Short wave infrared radiation, Infrared radiation, Infrared photography, Photodetectors, Infrared technology, Gallium arsenide, Indium arsenide, Infrared detectors, Light scattering

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Proceedings Article | 14 May 2018 Presentation + Paper

Heterogeneously coupled InAs Stranski-Krastanov and submonolayer quantum dot infrared photodetector for next-generation IR imaging

D. Das, D. P. Panda, J. Saha, V. Chavan, S. Chakrabarti

Proceedings Volume 10624, 106241S (2018) https://doi.org/10.1117/12.2304763

KEYWORDS: Heterojunctions, Indium arsenide, Infrared imaging, Gallium arsenide, Luminescence, Quantum dots, Photodetectors, Infrared photography

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Proceedings Article | 14 May 2018 Paper

Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions

S. Upadhyay, D. P. Panda, D. Das, N.B.V. Subrahmanyam, P. Bhagwat, S. Chakrabarti

Proceedings Volume 10624, 1062423 (2018) https://doi.org/10.1117/12.2305069

KEYWORDS: Ions, Heterojunctions, Hydrogen, Quantum dots, Gallium arsenide, Photodetectors

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Proceedings Article | 21 February 2018 Paper

Effect of various capping layer on the hydrostatic and biaxial strain of InAs QDs in x (100) and z (001) direction

Jhuma Saha, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 10543, 105430U (2018) https://doi.org/10.1117/12.2289961

KEYWORDS: Gallium, Indium arsenide, Gallium arsenide, Heterojunctions, Luminescence, Aluminum, Quantum dots, Laser applications, Optoelectronics

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Proceedings Article | 20 February 2017 Paper

Impact of varying barrier thickness on the optical characteristics of multilayer InAs/GaAs QDIPs

Debiprasad Panda, Dinesh Pal, Harshal Rawool, Subhananda Chakrabarti

Proceedings Volume 10114, 1011410 (2017) https://doi.org/10.1117/12.2250507

KEYWORDS: Indium gallium arsenide, Luminescence, Quantum dots, Molecular beam epitaxy, Optical properties, Indium arsenide, Photodetectors, Gallium arsenide, Solids, Nanoparticles, Indium, Heterojunctions

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Proceedings Article | 15 September 2016 Paper

A detailed investigation of the impact of varying number of dot layers in strain-coupled multistacked InAs/GaAs quantum dot heterostructures

Debiprasad Panda, Akshay Balgarkashi, Saikalash Shetty, Hemant Ghadi, Subhananda Chakrabarti

Proceedings Volume 9927, 99271J (2016) https://doi.org/10.1117/12.2238607

KEYWORDS: Indium arsenide, Heterojunctions, Luminescence, Optical properties, Gallium arsenide, Quantum dots, Photodetectors, Electrical engineering, Solar cells, Infrared photography

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Proceedings Article | 15 September 2016 Paper

Growth technique and effect of post growth annealing on the optical properties of In(Ga)As/GaAs quantum dot heterostructures

Debiprasad Panda, Aijaz Ahmad, Sourav Adhikary, Hemant Ghadi, Subhananda Chakrabarti

Proceedings Volume 9927, 99271I (2016) https://doi.org/10.1117/12.2238605

KEYWORDS: Annealing, Heterojunctions, Optical properties, Luminescence, Quantum dots, Indium arsenide, Argon, Gallium arsenide, Infrared radiation, Electrical engineering

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Proceedings Article | 15 March 2016 Paper

Effect of varying capping composition and number of strain-coupled stacks on In0.5Ga0.5As quantum dot infrared photodetectors

Debiprasad Panda, Saikalash Shetty, Akshay Balgarkashi, Hemant Ghadi, Navneet Sehara, Subhananda Chakrabarti

Proceedings Volume 9758, 97580Q (2016) https://doi.org/10.1117/12.2209308

KEYWORDS: Quantum dots, Gallium arsenide, Infrared radiation, Quantum well infrared photodetectors, Infrared photography, Photodetectors, Molecular beam epitaxy, Luminescence, Solids, Mid-IR, Indium, Gallium, Heterojunctions

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Proceedings Article | 15 March 2016 Paper

Diffusion impact on thermal stability in self-assembled bilayer InAs/GaAs quantum dots (QDs)

B. Tongbram, Navneet Sehara, Jashan Singhal, Debabrata Das, D. Panda, S. Chakrabarti

Proceedings Volume 9758, 97580T (2016) https://doi.org/10.1117/12.2211749

KEYWORDS: Diffusion, Quantum dots, Annealing, Luminescence, Vertical cavity surface emitting lasers, Indium arsenide, Crystals, Gallium arsenide, Transmission electron microscopy, Chemical species

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Proceedings Article | 15 March 2016 Paper

Growth strategy to achieve mono-modal quantum dot size distribution in InAs/GaAs multi stack coupled heterostructures

Aijaz Ahmad, Debiprasad Panda, Saikalash Shetty, Akshay Balgarkashi, Subhananda Chakrabarti

Proceedings Volume 9758, 97580S (2016) https://doi.org/10.1117/12.2211649

KEYWORDS: Indium arsenide, Heterojunctions, Quantum dots, Luminescence, Gallium arsenide, Optical properties, Instrument modeling, Quantum optics, Singular optics, Nanoparticles, Infrared radiation, Temperature metrology, Electrical engineering, Nanostructures

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Proceedings Article | 15 March 2016 Paper

A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness

B. Tongbram, N. Sehara, J. Singhal, D. Panda, S. Chakrabarti

Proceedings Volume 9758, 975802 (2016) https://doi.org/10.1117/12.2212767

KEYWORDS: Gallium arsenide, Atomic force microscopy, Raman spectroscopy, Transmission electron microscopy, X-ray diffraction, Optical properties, Crystals, Indium arsenide, Phonons, Quantum dots, Optical lithography

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Showing 5 of 53 publications

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