Dr. Debabrata Das Profile

Dr. Debabrata Das

Research Associate at Indian Institute Of Technology Bombay

SPIE Involvement:

Author

Area of Expertise:

Molecular Beam Epitaxy , Luminescence Spectroscopy (PL, PLE) , Device Characterization of IR Photodetectors , Lock in Thermography, PL and EL Imaging, EQE , Quantum Dot Photodetectors and Solar Cells

Profile Summary

Right now I am a grower in MBE (III-As).
Have experience in wide variety of material characterization (PL, PLE, HRXRD, Raman, XTEM, Hall etc). Also did growth, fabrication and characterization of thin film solar cell. Additionally, degradation study of solar cells and modules.

Publications (35)

Proceedings Article | 5 March 2022 Poster + Paper

Poster + Paper

High energy proton implantation effect on the emission wavelength and strain phenomenon of strain coupled InAs/In(Ga)As submonolayer (SML) QDs and Stranski-Krastanov (SK) QDs

Samishta Choudhary, Debabrata Das, Saurabh Upadhyay, Debiprasad Panda, Anindya Dutta, Subhananda Chakrabarti

Proceedings Volume 12010, 120100F (2022) https://doi.org/10.1117/12.2610567

KEYWORDS: Gallium arsenide, Quantum dots, Indium arsenide, Ions, Heterojunctions, Luminescence, Ion implantation, Quantum wells, Electronics, Photodetectors

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Proceedings Article | 1 August 2021 Poster + Presentation + Paper

Poster + Presentation + Paper

Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations

Suryansh Dongre, Debiprasad Panda, Debabrata Das, SanowarAlam Gazi, Ravindra Kumar, Mahitosh Biswas, Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 11802, 118020W (2021) https://doi.org/10.1117/12.2594397

KEYWORDS: Heterojunctions, Indium arsenide, Short wave infrared radiation, Gallium arsenide, Photodetectors, Luminescence, 3D modeling

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Proceedings Article | 8 March 2021 Poster + Paper

Poster + Paper

The electronic interaction between vertically coupled Stranski-Krastanov and submonolayer quantum dots: a detailed investigation of carrier transitions and correlation with improved NIR energy conversion efficiency

Debabrata Das, Samishta Choudhary, Debiprasad Panda, Jhuma Saha, Subhananda Chakrabarti

Proceedings Volume 11681, 1168112 (2021) https://doi.org/10.1117/12.2578990

KEYWORDS: Quantum dots, Near infrared, Energy conversion efficiency, Solar energy, Solar cells, Photons, Quantum efficiency, Photovoltaics, Energy harvesting, Carrier dynamics

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Proceedings Article | 21 August 2020 Poster + Paper

Poster + Paper

Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots

Manas Mantri, Debiprasad Panda, Debabrata Das, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

Proceedings Volume 11465, 114651C (2020) https://doi.org/10.1117/12.2568847

KEYWORDS: Indium arsenide, Quantum dots, Gallium arsenide, Atomic force microscopy, Heterojunctions, Luminescence, Sensors

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Proceedings Article | 21 August 2020 Poster + Paper

Poster + Paper

Effect of ex-situ annealing on coupled hybrid InAs Stranski-Krastanov (SK) on Submonolayer (SML) Quantum Dot heterostructures with different spacer layer thickness

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11465, 114651E (2020) https://doi.org/10.1117/12.2569012

KEYWORDS: Annealing, Indium arsenide, Heterojunctions, Quantum dots, Gallium arsenide, Luminescence, X-ray diffraction, Optoelectronics

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Proceedings Article | 2 March 2020 Paper

Paper

Submonolayer quantum dots in P-i-P configuration: study on effects of monolayer coverage and stacking variations

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Q (2020) https://doi.org/10.1117/12.2542569

KEYWORDS: Heterojunctions, Quantum dots, Indium arsenide, Luminescence, Gallium arsenide, Gallium, Beryllium

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Proceedings Article | 2 March 2020 Paper

Paper

Optimization of strain-coupled InAs QD layers in P-i-P infrared photodetector heterostructures

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Abhishek Kumar, Nivedita Pandey, Subhananda Chakrabarti

Proceedings Volume 11291, 112910P (2020) https://doi.org/10.1117/12.2542565

KEYWORDS: Heterojunctions, Indium arsenide, Photodetectors, Luminescence, Infrared radiation, Gallium, Gallium arsenide, Quantum dots

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Proceedings Article | 2 March 2020 Paper

Paper

Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

Proceedings Volume 11291, 112910O (2020) https://doi.org/10.1117/12.2542403

KEYWORDS: Heterojunctions, Indium arsenide, Gallium arsenide, Luminescence, Indium gallium arsenide, Quantum dots, Phonons

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Proceedings Article | 2 March 2020 Paper

Paper

A comparative analysis between heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) and Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11291, 112910Y (2020) https://doi.org/10.1117/12.2546336

KEYWORDS: Heterojunctions, Gallium arsenide, Indium arsenide, Quantum dots, Optoelectronics, X-ray diffraction, Quantum wells, Luminescence

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Proceedings Article | 2 March 2020 Presentation + Paper

Presentation + Paper

Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures with higher (0.1ML/sec) and lower (0.05ML/sec) growth rates

Samishta Choudhary, Jhuma Saha, Debiprasad Panda, Debabrata Das, Suryansh Dongre, Subhananda Chakrabarti

Proceedings Volume 11291, 1129104 (2020) https://doi.org/10.1117/12.2546367

KEYWORDS: Quantum dots, Heterojunctions, Gallium arsenide, Indium arsenide, Optoelectronics, X-ray diffraction, Optoelectronic devices, Luminescence

Read Abstract +

Proceedings Article | 9 September 2019 Paper

Paper

A detailed investigation on the impact of variation in monolayer coverage on optical properties of InAs/GaAs multilayer quantum dot heterostructure

Aditya Patel, Debiprasad Panda, Suryansh Dongre, Sanowar Alam Gazi, Debabrata Das, Subhananda Chakrabarti

Proceedings Volume 11085, 110851A (2019) https://doi.org/10.1117/12.2529014

KEYWORDS: Indium arsenide, Luminescence, Quantum dots, Gallium arsenide, Heterojunctions, Optical properties, X-ray diffraction

Read Abstract +

Proceedings Article | 9 September 2019 Paper

Paper

The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots

Rishabh Dahale, Abhijeet Aanand, Sanowar Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Anubhav Agarwal, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108519 (2019) https://doi.org/10.1117/12.2529006

KEYWORDS: Atomic force microscopy, Optical properties, Indium arsenide, Quantum dots, Gallium arsenide, Heterojunctions, Molecular beam epitaxy

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Proceedings Article | 9 September 2019 Paper

Paper

Effect of substrate temperature variation on the structural and optical properties of self assembled InAs quantum dots

Abhijeet Aanand, Suryansh Dongre, Sanowar Gazi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 110851D (2019) https://doi.org/10.1117/12.2529049

KEYWORDS: Quantum dots, Heterojunctions, Optical properties, Gallium arsenide, Indium arsenide, Indium, Atomic force microscopy, Luminescence

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Proceedings Article | 9 September 2019 Presentation

Presentation

Impact of various in-situ and ex-situ techniques on the optical, structural, and device performance of In(Ga)As/GaAs quantum dot based heterostructures and devices (Conference Presentation)

Subhananda Chakrabarti, Debiprasad Panda, Debabrata Das

Proceedings Volume 11085, 1108508 (2019) https://doi.org/10.1117/12.2528880

KEYWORDS: Quantum dots, Heterojunctions

Read Abstract +

Proceedings Article | 9 September 2019 Paper

Paper

Investigation of various capping layer configuration on heterogeneously coupled SML on SK quantum dots heterostructure

Pravin Raut, Rajkumar Ramavath, Jhuma Saha, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108517 (2019) https://doi.org/10.1117/12.2528893

KEYWORDS: Gallium, Heterojunctions, Aluminum, Quantum dots, Gallium arsenide, Bismuth, Photodetectors, Optoelectronic devices, Luminescence, Near infrared

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Proceedings Article | 9 September 2019 Paper

Paper

The enhancement in luminescence property of chemically passivated near surface quantum well and quantum dots

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol Pansare, Subhananda Chakrabarti

Proceedings Volume 11085, 110851O (2019) https://doi.org/10.1117/12.2530898

KEYWORDS: Quantum wells, Nanostructures, Heterojunctions, Gallium arsenide, Luminescence, Quantum dots, Sulfur, Gallium, Optical properties, Indium arsenide

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Proceedings Article | 9 September 2019 Paper

Paper

Optical and structural investigation of ex-situ passivated strain coupled InAs surface quantum dots

Debabrata Das, Manas Ranjan Mantri, Debiprasad Panda, Sritoma Paul, Shubham Mondal, Amol Pansare, Subhananda Chakrabarti

Proceedings Volume 11085, 110851N (2019) https://doi.org/10.1117/12.2530894

KEYWORDS: Indium arsenide, Quantum dots, Atomic force microscopy, Heterojunctions, Oxides, Sensors, Gallium arsenide, Luminescence, Etching

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Proceedings Article | 9 September 2019 Paper

Paper

Influence of quaternary (In0.21Al0.21Ga0.58As) capping on the performance of InAs quantum dot infrared photodetector

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Jhuma Saha, Binita Tongbram, Subhananda Chakrabarti

Proceedings Volume 11085, 110851K (2019) https://doi.org/10.1117/12.2529887

KEYWORDS: Quantum dots, Gallium arsenide, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Aluminum, Gallium

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Proceedings Article | 9 September 2019 Paper

Paper

The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots

Anubhav Agarwal, Abhijeet Aanand, Sanowar Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Rishabh Dahale, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 11085, 1108518 (2019) https://doi.org/10.1117/12.2528996

KEYWORDS: Quantum dots, Luminescence, Gallium arsenide, Indium, Indium arsenide, Spectroscopy, Nanostructures, Arsenic

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Proceedings Article | 28 May 2019 Presentation + Paper

Presentation + Paper

MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, Subhananda Chakrabarti

Proceedings Volume 10929, 109290C (2019) https://doi.org/10.1117/12.2508464

KEYWORDS: Heterojunctions, Germanium, Gallium arsenide, Quantum dots, Silicon, Optical properties, Optoelectronics integration, Luminescence, Optoelectronic devices

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Proceedings Article | 4 March 2019 Paper

Paper

Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 10929, 1092912 (2019) https://doi.org/10.1117/12.2508669

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Infrared radiation, Quantum dots, Infrared photography, Photodetectors, Short wave infrared radiation, Luminescence

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Proceedings Article | 4 March 2019 Presentation + Paper

Presentation + Paper

Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Vinayak Chavan, Pravin Raut, Abhijeet Aanand, Subhananda Chakrabarti

Proceedings Volume 10929, 109290G (2019) https://doi.org/10.1117/12.2508643

KEYWORDS: Modulation, Doping, Gallium arsenide, Quantum dots, Indium arsenide, Photodetectors, Infrared radiation, Heterojunctions, Luminescence

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Proceedings Article | 4 March 2019 Paper

Paper

Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 10929, 1092911 (2019) https://doi.org/10.1117/12.2508615

KEYWORDS: Gallium arsenide, Modulation, Quantum dots, Infrared detectors, Short wave infrared radiation, Infrared radiation, Mid-IR, Aluminum, Luminescence

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Proceedings Article | 4 March 2019 Presentation + Paper

Presentation + Paper

Influence of modulation doping on p-i-p quantum-dots (InAs/GaAs)-based infrared detector performance

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Vinayak Chavan, Pravin Raut, Abhijeet Aanand, Subhananda Chakrabarti

Proceedings Volume 10929, 109290K (2019) https://doi.org/10.1117/12.2508533

KEYWORDS: Modulation, Quantum dots, Indium arsenide, Doping, Infrared radiation, Gallium arsenide, Infrared detectors, Luminescence, Photodetectors

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Proceedings Article | 4 March 2019 Paper

Paper

Investigation of carrier-confinement and dark current minimization in In0.5Ga0.5As QDIP with the incorporation of In0.21Al0.21Ga0.58As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 1092910 (2019) https://doi.org/10.1117/12.2508488

KEYWORDS: Aluminum, Gallium, Indium gallium arsenide, Quantum dots, Heterojunctions, Luminescence, Infrared radiation, Gallium arsenide, Photodetectors

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Proceedings Article | 4 March 2019 Presentation + Paper

Presentation + Paper

Effect of vertical coupling on the performance of mid-infrared InAs-QDIP

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290E (2019) https://doi.org/10.1117/12.2508482

KEYWORDS: Heterojunctions, Gallium arsenide, Quantum dots, Mid-IR, Photodetectors, Raman spectroscopy, Infrared radiation

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Proceedings Article | 4 March 2019 Paper

Paper

Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Proceedings Volume 10929, 109290Z (2019) https://doi.org/10.1117/12.2508467

KEYWORDS: Indium gallium arsenide, Indium arsenide, Heterojunctions, Quantum dots, Gallium, Luminescence, Gallium arsenide, Mid-IR, Satellites, Infrared photography

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Proceedings Article | 1 March 2019 Presentation + Paper

Presentation + Paper

Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Mahitosh Biswas, Sourabh Upadhyay, Debabrata Das, Songrui Zhao, Zetian Mi, Subhananda Chakrabarti

Proceedings Volume 10918, 109180A (2019) https://doi.org/10.1117/12.2508490

KEYWORDS: Nanowires, Ultraviolet radiation, Silicon, Ozone, Ion implantation, Scanning electron microscopy, Molecular beam epitaxy

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Proceedings Article | 14 May 2018 Presentation + Paper

Presentation + Paper

Heterogeneously coupled InAs Stranski-Krastanov and submonolayer quantum dot infrared photodetector for next-generation IR imaging

D. Das, D. P. Panda, J. Saha, V. Chavan, S. Chakrabarti

Proceedings Volume 10624, 106241S (2018) https://doi.org/10.1117/12.2304763

KEYWORDS: Heterojunctions, Indium arsenide, Infrared imaging, Gallium arsenide, Luminescence, Quantum dots, Photodetectors, Infrared photography

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Proceedings Article | 14 May 2018 Paper

Paper

Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation

Vidya Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Harshal Rawool, Subhananda Chakrabarti

Proceedings Volume 10624, 106241Q (2018) https://doi.org/10.1117/12.2305289

KEYWORDS: Quantum dots, Short wave infrared radiation, Infrared radiation, Infrared photography, Photodetectors, Infrared technology, Gallium arsenide, Indium arsenide, Infrared detectors, Light scattering

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Proceedings Article | 14 May 2018 Paper

Paper

Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions

S. Upadhyay, D. P. Panda, D. Das, N.B.V. Subrahmanyam, P. Bhagwat, S. Chakrabarti

Proceedings Volume 10624, 1062423 (2018) https://doi.org/10.1117/12.2305069

KEYWORDS: Ions, Heterojunctions, Hydrogen, Quantum dots, Gallium arsenide, Photodetectors

Read Abstract +

Proceedings Article | 21 February 2018 Paper

Paper

Effect of various capping layer on the hydrostatic and biaxial strain of InAs QDs in x (100) and z (001) direction

Jhuma Saha, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Subhananda Chakrabarti

Proceedings Volume 10543, 105430U (2018) https://doi.org/10.1117/12.2289961

KEYWORDS: Gallium, Indium arsenide, Gallium arsenide, Heterojunctions, Luminescence, Aluminum, Quantum dots, Laser applications, Optoelectronics

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Proceedings Article | 20 February 2017 Paper

Paper

Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 um

A. Balgarkashi, M. Biswas, S. Singh, D. Das, N. Shinde, R. Makkar, A. Bhatnagar, S. Chakrabarti

Proceedings Volume 10114, 101140Q (2017) https://doi.org/10.1117/12.2250527

KEYWORDS: Luminescence, Annealing, Nitrogen, Laser communications, Gallium arsenide, Crystals, Indium arsenide, Quantum wells, Indium gallium arsenide, Optical properties

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Proceedings Article | 20 February 2017 Paper

Paper

A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers

Akshay Balgarkashi, Mahitosh Biswas, Sandeep Singh, Debabrata Das, Anuj Bhatnagar, Roshan Makkar, Nilesh Shinde, Subhananda Chakrabarti

Proceedings Volume 10114, 1011412 (2017) https://doi.org/10.1117/12.2251290

KEYWORDS: Quantum dots, Indium arsenide, Annealing, Optical properties, Convolution, Nitrogen, Indium, Gallium arsenide, Heterojunctions, Luminescence

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Proceedings Article | 15 March 2016 Paper

Paper

Diffusion impact on thermal stability in self-assembled bilayer InAs/GaAs quantum dots (QDs)

B. Tongbram, Navneet Sehara, Jashan Singhal, Debabrata Das, D. Panda, S. Chakrabarti

Proceedings Volume 9758, 97580T (2016) https://doi.org/10.1117/12.2211749

KEYWORDS: Diffusion, Quantum dots, Annealing, Luminescence, Vertical cavity surface emitting lasers, Indium arsenide, Crystals, Gallium arsenide, Transmission electron microscopy, Chemical species

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Showing 5 of 35 publications

Conference Committee Involvement (1)

IST:GST 2017

25 November 2017 |

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