Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots

Manas Ranjan Mantri; Debiprasad Panda; Debabrata Das; Ravinder Kumar; Sanowar Alam Gazi; Subhananda Chakrabarti

doi:10.1117/12.2568847

21 August 2020 Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots

Manas Ranjan Mantri, Debiprasad Panda, Debabrata Das, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti

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Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 114651C (2020) https://doi.org/10.1117/12.2568847
Event: SPIE Nanoscience + Engineering, 2020, Online Only

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Abstract

Over the last decade InAs Stranski–Krastanov (S-K) quantum dots (QDs) grown on GaAs substrate have been widely explored for optoelectronic devices. In the recent past, the uncapped surface QDs are getting much attention for sensing application with adequate sensitivity to lower molar concentration of contaminants. Though non-uniform size distribution is an inherent property of the self-assembled S-K growth process, sensitivity of the surface QDs is significantly affected by this. Here, we have grown the surface QDs upon buried QD layer with a low barrier layer thickness to reduce the non-uniformity. In general, the 2D to 3D transition of the InAs QDs occurs only above 1.7 monolayer (ML). However, the 3D transition may be possible even at a lower monolayer coverage with the residual strain induced from the underlying QDs. In this study, particularly we have grown InAs surface QD layer at 1.6 ML coverage above the 2.7 ML buried QD layer with 8 nm thick GaAs spacer. The impact of vertically induced strain of the underneath InAs QD layer on the growth of surface dots has been investigated. The morphology of surface QDs is observed through Atomic force microscopy (AFM), which indicates the formation of uniform QDs with lower defects. The low temperature photoluminescence (PL) spectroscopy provides the evidence of the wave function overlap between the buried and surface QDs.

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Manas Ranjan Mantri, Debiprasad Panda, Debabrata Das, Ravinder Kumar, Sanowar Alam Gazi, and Subhananda Chakrabarti "Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114651C (21 August 2020); https://doi.org/10.1117/12.2568847

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