In this paper, we have compared various mark designs with real cell in terms of aberration sensitivity under the specific illumination condition. The specific illumination model was used for aberration sensitivity simulation while varying mask tones and target designs. Then, diffraction based simulation was conducted to analyze the effect of aberration sensitivity on the actual overlay values. The simulation results were confirmed by comparing the OL results obtained by diffraction based metrology with the cell level OL values obtained using Critical Dimension Scanning Electron Microscope. |
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CITATIONS
Cited by 1 patent.
Overlay metrology
Optical proximity correction
Diffraction
Critical dimension metrology
Metrology
Electron microscopes
Scanning electron microscopy