Presentation + Paper
26 May 2022 A study on the detection and monitoring of weak areas in wafer using massive 2D and 3D measurement data
Author Affiliations +
Abstract
In case the process margin of the device is large and the defect tendency in the wafer occurs randomly, process monitoring were possible using limited sampling measurement values. Previous 3D structure metrology equipment (CD-SEM, ellipsometry, etc.) are not able to measure the entire structure of the wafer due to the speed limit. If the measurement location does not include a weak point, an error occurs in predicting the wafer defect rate. In this study, we propose a new method that can extract weak points from color maps obtained by high-speed inspection tools that can measure the entire wafer. We were able to reduce the process error by about 20% by weak point monitoring.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungyoon Ryu, Dong Hoon Kim, Sunhong Jun, Suho Ryu, JaeHyung Ahn, Hyun Lee, Kwang-Eun Kim, Yusin Yang, and Younghoon Sohn "A study on the detection and monitoring of weak areas in wafer using massive 2D and 3D measurement data", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 1205302 (26 May 2022); https://doi.org/10.1117/12.2613631
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KEYWORDS
Semiconducting wafers

3D metrology

Inspection

Ellipsometry

Metrology

3D modeling

Detection and tracking algorithms

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