ASML NXE:3400 and NXE:3600D scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm to 3nm logic devices as well as 10nm class memory devices. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
ASML NXE:3400 scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5nm logic devices as well as D1z memory devices. In 2021, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and D1a and D1b nodes. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
ASML NXE:3400 scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5nm logic devices as well as D1z memory devices. This year, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and D1a and D1b nodes. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
0.33 NA EUV scanners are being used for High Volume Manufacturing. In this paper we will give an update on the performance improvements of the NXE:3400 systems related to the lithographic performance, productivity and uptime.
Finally we look at future system improvements to meet requirements for the 3 nm node and beyond.
In 2019 we have seen the first 7 nm logic devices, manufactured on ASML NXE:3400 scanners, hitting the market. In this paper we will give an update on the performance improvements to further optimize these systems for High Volume Manufacturing (HVM), related to the lithographic performance, productivity and uptime.
We will also demonstrate that for the 5 nm logic node and 10nm-class DRAM, excellent overlay, focus, and critical dimension (CD) control have been realized. In combination with intrinsic tool stability and holistic control schemes, including (resist and tool) performance improvements addressing stochastics issues, this provides the required performance for HVM for these nodes.
Finally we will discuss the ASML roadmap for meeting the requirements for the 3 nm node and beyond.
Progress on 0.33 NA EUV Systems for High-Volume Manufacturing
With the introduction of the fifth-generation NXE:3400 scanner, ASML has brought EUV lithography to high-volume manufacturing (HVM) of the 7-nm logic node and beyond while fully supporting the use of pellicle. In this presentation, we give an update on lithographic performance results obtained from the latest NXE:3400 system that is characterized by a numerical aperture (NA) of 0.33, a pupil-fill ratio (PFR) of 0.2 and a throughput capability of more than 155 wafers per hour.
To maximize the number of yielding dies per day, excellent overlay, focus, and critical dimension (CD) control have been realized, in combination with intrinsic tool stability with holistic control schemes. Stochastics are addressed throughout the production process and scanner contribution specifically.
We will also show matching performance for both overlay and imaging, and further improvements in focus process dependencies for the 5-nm logic node and beyond, including the ASML roadmap for meeting the requirements for future nodes.
With the introduction of its fifth-generation NXE:3400B scanner, ASML brought EUV to High-Volume Manufacturing for 7 nm node lithography and beyond with full support of pellicle. This paper presents an update on lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour. Advances in source power and system availability have enabled a continued increase of productivity. To maximize the number of yielding dies per day excellent Overlay, Focus, and Critical Dimension (CD) control have been realized, combining intrinsic tool stability with holistic control schemes. We will also show matching performance for both Overlay and Imaging, and further improvements in Focus Process Dependencies for the 5nm node.
EUV lithography enables the transition from multiple patterning in DUV back to single patterning in EUV, with the associated cost benefit. While imaging and patterning becomes easier with EUV, cross-platform overlay performance needs to be taken into account.
With quadruple patterning, the matching performance is driven by the platform capabilities, with platform specific fingerprints not contributing to the matching performance as they are similar for each layer. Introducing EUV automatically means we need to compensate for the differences in the platform fingerprints, as they bring a penalty in the DUV-EUV matching budget.
This paper will explain what the main overlay contributors in cross-platform matched machine overlay are and how they can be cancelled or reduced using additional correction measures, with the goal to reach below 2.0 nm cross matched machine overlay.
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