Ms. Yu-Ting Hsu Profile

Yu-Ting Hsu

at National Yang Ming Chiao Tung Univ.

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Publications (2)

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Proceedings Article | 11 October 2012 Paper

High electron mobility AlGaN/AlN/GaN HEMT structure with a nano-scale AlN interlayer

Shih-Chun Huang, Wen-Ray Chen, Yu-Ting Hsu, Jia-Ching Lin, Kuo-Jen Chang, Wen-Jen Lin

Proceedings Volume 8467, 84670W (2012) https://doi.org/10.1117/12.929347

KEYWORDS: Aluminum nitride, Field effect transistors, Atomic force microscopy, Aluminum, Gallium nitride, Crystals, Epitaxy, Metalorganic chemical vapor deposition, Interfaces, X-ray diffraction

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Epitaxies of AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with different thickness of nano-scale AlN interlayers have been realized by metalorganic chemical vapor deposition (MOCVD) technology. After epitaxy, high resolution X-ray diffraction (HRXRD), temperature-dependent Hall Effect and atomic force microscopy (AFM) measurements were used to characterize the properties of these samples. First, it was found that the Al composition of AlGaN layer increases from 21.6 to 34.2% with increasing the thickness of AlN interlayer from 0 to 5 nm under the same AlGaN growth conditions. This result may due to the influences of compressive stress and Al incorporation induced by the AlN interlayer. Then, we also found that the room-temperature (RT) electron mobility stays higher than 1500 cm²/Vs in the samples within AlN interlayer thickness range of 1.5 nm, on the other hand, the low-temperature (80K) electron mobility drops dramatically from 8180 to 5720 cm²/Vs in the samples with AlN interlayer thickness increasing from 1 to 1.5 nm. Furthermore, it was found that the two-dimensional electron gas (2DEG) density increases from 1.15×10¹³ to 1.58×10¹³ cm^-2 beyond the AlN interlayer thickness of 1 nm. It was also found that the temperature independent 2DEG densities are observed in the samples with AlN interlayer thickness of 0.5 and 1 nm. The degenerated characteristics of the samples with AlN thickness thicker than 1.5 nm show the degraded crystalline quality which matched the observation of surface defects and small cracks formations from their AFM images. Finally, the 2DEG mobilities of the proposed structures can be achieved as high as 1705 and 8180 cm²/Vs at RT and 80K, respectively.

Proceedings Article | 10 October 2012 Paper

Investigation of the (Cu,Ga)InSe2 thin film with different pairs of CuGa/In sputtered layers

Yu-Ting Hsu, Kai-Feng Huang, Shang-I Tsai, Wen-Hou Lan, Ming Yueh, Jia-Ching Lin, Kuo-Jen Chang, Wen-Jen Lin

Proceedings Volume 8470, 84700M (2012) https://doi.org/10.1117/12.929712

KEYWORDS: Copper indium gallium selenide, Thin films, Scanning electron microscopy, Sputter deposition, Glasses, Solar cells, Thin film deposition, X-ray diffraction, Selenium, Indium

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Thin film samples of (Cu,Ga)InSe₂ (CIGS) were prepared by DC magnetron sputtering and the selenisation process onto soda lime glass substrates. All samples had the same deposition conditions, and the optimal sputtering thickness of samples with one CuGa/In pair and two CuGa/In pairs are also the same. After sample deposition, X-ray diffraction (XRD), scanning electron microscope (SEM) and Hall effect measurements were used to characterize the properties of these samples. From XRD measurement results, excepting an extra small CuSe peak existing in the samples with two CuGa/In pairs, the XRD peaks of all samples are perfectly matched with the phase diagram of CuGa_0.3In_0.7Se₂ material. It was also found that the grain sizes of the samples with one CuGa/In pair are larger than those with two CuGa/In pairs from SEM images. All these observations on samples with two CuGa/In pairs can be attributed to the fact that the less In incorporation in CIGS films, which it has been proven that the sample with low In-to-CuGa ratio has stronger CuSe peak from XRD result. Furthermore, the p-type carrier characteristics can be observed for all samples from Hall measurement results. The carrier mobility and concentration of the samples with one CuGa/In pair can be achieved as high as 15.28 cm²/Vs and as low as 1.50×10¹⁶ cm^-3, respectively, while the carrier mobility and concentration of the ones with two CuGa/In pairs can be achieved as 6.4 cm²/Vs and 6.27×10¹⁷ cm^-3, respectively. The results of superior electrical properties of samples with one CuGa/In pair agree well with the observations form XRD and SEM results. In the final, the optimal value of In-to-CuGa ratio during CuGa/In layers deposition in this study is 0.625.

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