Investigation of the (Cu,Ga)InSe2 thin film with different pairs of CuGa/In sputtered layers

Yu-Ting Hsu; Kai-Feng Huang; Shang-I Tsai; Wen-Hou Lan; Ming Yueh; Jia-Ching Lin; Kuo-Jen Chang; Wen-Jen Lin

doi:10.1117/12.929712

10 October 2012 Investigation of the (Cu,Ga)InSe₂ thin film with different pairs of CuGa/In sputtered layers

Yu-Ting Hsu, Kai-Feng Huang, Shang-I Tsai, Wen-Hou Lan, Ming Yueh, Jia-Ching Lin, Kuo-Jen Chang, Wen-Jen Lin

Proceedings Volume 8470, Thin Film Solar Technology IV; 84700M (2012) https://doi.org/10.1117/12.929712
Event: SPIE Solar Energy + Technology, 2012, San Diego, California, United States

Abstract

Thin film samples of (Cu,Ga)InSe₂ (CIGS) were prepared by DC magnetron sputtering and the selenisation process onto soda lime glass substrates. All samples had the same deposition conditions, and the optimal sputtering thickness of samples with one CuGa/In pair and two CuGa/In pairs are also the same. After sample deposition, X-ray diffraction (XRD), scanning electron microscope (SEM) and Hall effect measurements were used to characterize the properties of these samples. From XRD measurement results, excepting an extra small CuSe peak existing in the samples with two CuGa/In pairs, the XRD peaks of all samples are perfectly matched with the phase diagram of CuGa_0.3In_0.7Se₂ material. It was also found that the grain sizes of the samples with one CuGa/In pair are larger than those with two CuGa/In pairs from SEM images. All these observations on samples with two CuGa/In pairs can be attributed to the fact that the less In incorporation in CIGS films, which it has been proven that the sample with low In-to-CuGa ratio has stronger CuSe peak from XRD result. Furthermore, the p-type carrier characteristics can be observed for all samples from Hall measurement results. The carrier mobility and concentration of the samples with one CuGa/In pair can be achieved as high as 15.28 cm²/Vs and as low as 1.50×10¹⁶ cm^-3, respectively, while the carrier mobility and concentration of the ones with two CuGa/In pairs can be achieved as 6.4 cm²/Vs and 6.27×10¹⁷ cm^-3, respectively. The results of superior electrical properties of samples with one CuGa/In pair agree well with the observations form XRD and SEM results. In the final, the optimal value of In-to-CuGa ratio during CuGa/In layers deposition in this study is 0.625.

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Yu-Ting Hsu, Kai-Feng Huang, Shang-I Tsai, Wen-Hou Lan, Ming Yueh, Jia-Ching Lin, Kuo-Jen Chang, and Wen-Jen Lin "Investigation of the (Cu,Ga)InSe₂ thin film with different pairs of CuGa/In sputtered layers", Proc. SPIE 8470, Thin Film Solar Technology IV, 84700M (10 October 2012); https://doi.org/10.1117/12.929712

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KEYWORDS

Copper indium gallium selenide

Thin films

Scanning electron microscopy

Glasses

Sputter deposition

Solar cells

Thin film deposition

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