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Ramazan Atalay
Assistant Professor at Georgia State Univ.
SPIE Involvement:
Author
Publications (5)
Proceedings Article | 26 August 2015 Presentation + Paper
Sonochemically grown 1D ZnO nanostructures and their applications
Yavuz Bayam, Debora Rodrigues, Ramazan Atalay, Ceylan Zafer, Salih Okur, Rukayya Bala, Tugba Okyay, Burak Gültekin, Ihsan Caha, Enis Tural, Sinem Duyar, Cebrail Özbek, Telat Guler
Proceedings Volume 9553, 95530E (2015) https://doi.org/10.1117/12.2190286
KEYWORDS: Zinc oxide, Glasses, Carbon monoxide, Zinc, Nanostructures, Raman spectroscopy, Scanning electron microscopy, Dye sensitized solar cells, Solar cells, Nanorods
Proceedings Article | 15 October 2012 Paper
Effect of nucleation period on the physical properties of InN epilayers
Proceedings Volume 8484, 84841I (2012) https://doi.org/10.1117/12.930363
KEYWORDS: Indium nitride, Raman spectroscopy, Spectroscopy, Dielectrics, X-ray diffraction, FT-IR spectroscopy, Optoelectronics, Reflectance spectroscopy, Chemical vapor deposition, Nitrogen
Proceedings Article | 15 October 2012 Paper
Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD
Proceedings Volume 8484, 84840X (2012) https://doi.org/10.1117/12.930199
KEYWORDS: Indium nitride, Raman spectroscopy, Phonons, FT-IR spectroscopy, Infrared spectroscopy, Optoelectronics, Crystals, X-ray diffraction, Reflectance spectroscopy, Spectroscopy
Proceedings Article | 18 August 2010 Paper
Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD
M. Buegler, S. Gamage, R. Atalay, J. Wang, I. Senevirathna, R. Kirste, T. Xu, M. Jamil, I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, N. Dietz
Proceedings Volume 7784, 77840F (2010) https://doi.org/10.1117/12.860952
KEYWORDS: Indium nitride, Chemical vapor deposition, Raman spectroscopy, Crystals, Infrared spectroscopy, Indium, Heterojunctions, Gallium nitride, Nitrogen, Sapphire
Proceedings Article | 18 August 2009 Paper
Optical and structural properties of InN grown by HPCVD
M. Buegler, M. Alevli, R. Atalay, G. Durkaya, I. Senevirathna, M. Jamil, I. Ferguson, N. Dietz
Proceedings Volume 7422, 742218 (2009) https://doi.org/10.1117/12.828163
KEYWORDS: Indium nitride, Raman spectroscopy, Crystals, Sapphire, Chemical vapor deposition, Luminescence, Sensors, Gallium nitride, X-ray diffraction, Chemical analysis
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