Dr. Andrew G. Melton Profile

Dr. Andrew G. Melton

at The Univ. of North Carolina at Charlotte

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 4 February 2013 Open Access

Room temperature GaN-based spin polarized emitters

A. Melton, B. Kucukgok, Zhiqiang Liu, N. Dietz, N. Lu, I. Ferguson

Proceedings Volume 8631, 863104 (2013) https://doi.org/10.1117/12.2012586

KEYWORDS: Gadolinium, Magnetism, Gallium nitride, Light emitting diodes, Oxygen, Magnetic semiconductors, Ions, Electroluminescence, Polarization, Ferromagnetics

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Proceedings Article | 15 October 2012 Paper

Effect of nucleation period on the physical properties of InN epilayers

S. Gamage, M. K. Senevirathna, R. Atalay, A. G. Perera, A. Melton, I. Ferguson, N. Dietz

Proceedings Volume 8484, 84841I (2012) https://doi.org/10.1117/12.930363

KEYWORDS: Indium nitride, Raman spectroscopy, Spectroscopy, Dielectrics, X-ray diffraction, FT-IR spectroscopy, Optoelectronics, Reflectance spectroscopy, Chemical vapor deposition, Nitrogen

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Proceedings Article | 15 October 2012 Paper

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Ramazan Atalay, Max Buegler, Sampath Gamage, M. K. Senevirathna, Bahadir Küçükgök, Andrew Melton, Axel Hoffmann, A. G. Unil Perera, Ian Ferguson, Nikolaus Dietz

Proceedings Volume 8484, 84840X (2012) https://doi.org/10.1117/12.930199

KEYWORDS: Indium nitride, Raman spectroscopy, Phonons, FT-IR spectroscopy, Infrared spectroscopy, Optoelectronics, Crystals, X-ray diffraction, Reflectance spectroscopy, Spectroscopy

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SPIE Journal Paper | 6 April 2012 Open Access

Publisher's Note: Growth and characterization of In_xGa₁−xN alloys by metalorganic chemical vapor deposition for solar cell applications

Yong Huang, Jae-Hyun Ryou, Russell Dupuis, Andrew Melton, Muhammad Jamil, Ian Ferguson, Balakrishnam Jampana

JPE, Vol. 2, Issue 1, 020101, (April 2012) https://doi.org/10.1117/12.10.1117/1.JPE.2.020101

KEYWORDS: Metalorganic chemical vapor deposition, Solar cells, Gallium, Computer engineering, Materials science, Indium, Compound semiconductors, Data processing

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Proceedings Article | 21 August 2010 Paper

What would Edison do with solid state lighting?

Ian Ferguson, Andrew Melton, Tianming Xu, Muhammad Jamil, Will Fenwick

Proceedings Volume 7784, 77840A (2010) https://doi.org/10.1117/12.863800

KEYWORDS: Gallium nitride, Solid state lighting, Silicon, Light emitting diodes, Zinc oxide, Sapphire, Light sources, Light sources and illumination, Crystals, Metalorganic chemical vapor deposition

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Proceedings Article | 18 August 2010 Paper

Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching

Muhammad Jamil, Tianming Xu, Andrew Melton, Balakrishnam Jampana, Tahir Zaidi, Sheng Liu, Ian Ferguson

Proceedings Volume 7784, 77840E (2010) https://doi.org/10.1117/12.863785

KEYWORDS: Light emitting diodes, Silicon, Gallium nitride, Wet etching, Thin films, Electroluminescence, Sapphire, Metalorganic chemical vapor deposition, Etching, Epoxies

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Proceedings Article | 21 August 2009 Paper

Minimizing shadow losses in III-nitride solar cells

Andrew Melton, Balakrishnam Jampana, Robert Opila, Christiana Honsberg, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7409, 740916 (2009) https://doi.org/10.1117/12.829264

KEYWORDS: Solar cells, Indium gallium nitride, Gallium nitride, Absorption, Tandem solar cells, Sapphire, Polishing, Indium, Metalorganic chemical vapor deposition, Scattering

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Proceedings Article | 18 August 2009 Paper

MOCVD growth of GaN on Si substrates using an ALD-grown Al2O3 interlayer

William Fenwick, Andrew Melton, Nola Li, Tianming Xu, Christopher Summers, Muhammad Jamil, Ian Ferguson

Proceedings Volume 7422, 74220P (2009) https://doi.org/10.1117/12.828462

KEYWORDS: Gallium nitride, Silicon, Sapphire, Light emitting diodes, Metalorganic chemical vapor deposition, Patterned sapphire substrate, Atomic layer deposition, Corundum, Raman spectroscopy, Aluminum nitride

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Proceedings Article | 3 February 2009 Paper

Development of new substrate technologies for GaN LEDs: atomic layer deposition transition layers on silicon and ZnO

W. E. Fenwick, N. Li, M. Jamil, T. Xu, A. Melton, S. Wang, H. Yu, A. Valencia, J. Nause, C. Summers, I. T. Ferguson

Proceedings Volume 7231, 723119 (2009) https://doi.org/10.1117/12.815324

KEYWORDS: Gallium nitride, Zinc oxide, Silicon, Annealing, Corundum, Crystals, Light emitting diodes, Atomic layer deposition, Metalorganic chemical vapor deposition, Scanning electron microscopy

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Proceedings Article | 3 September 2008 Paper

MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications

Hongbo Yu, Shenjie Wang, Nola Li, William Fenwick, Andrew Melton, Matthew Kane, B. Klein, Ian Ferguson

Proceedings Volume 7058, 70580V (2008) https://doi.org/10.1117/12.798540

KEYWORDS: Zinc oxide, Superlattices, Gallium nitride, Temperature metrology, Satellites, Optical properties, Interfaces, Indium gallium nitride, Quantum wells, Crystals

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Showing 5 of 10 publications

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