A LED material evaluation technology called EpiEL was introduced to measure electroluminescence (EL) directly on
LED epiwafers. Based on EpiEL technology, a virtual LED device fabrication & characterization system has been
developed which can be used to measure LED device parameters on epiwafers without any costly and time-consuming
device fabrication. As through a finished device, the system reveals not only the electro-luminescence (EL) but also the
electrical properties of the material. The developed EpiEL mapping system can rapidly obtain EL spectrum, LIV, output
characteristics, wavelength & FWHM shift curves, as well as wafer-level uniformity about slope quantum efficiency,
emission intensity, peak/dominant wavelength (WLP/WLD), FWHM, driving voltage/current, etc... EL measurement is
usually performed on finished device (such as LED) since it needs a device structure to inject current. EpiEL mapping
system overcomes this limitation by instantly forming a well-defined LED device inside the material. With such
capability, EpiEL technology provides a unique electroluminescence solution for optoelectronic (especially emerging
solid-state lighting) industry which brings better capability and efficiencies: instant response for material development
and device-level quality control right after material growth.
This paper reports for the first time the electrical conduction and breakdown characteristics of thin-wall ceramic spacers bridging two thin-film electrodes, which represent the FEA cathode and the phosphor anode in a field emission display (FED). Techniques to set up a high aspect- ratio thin-wall spacer were specially developed, without use of glue. An extra-low light detection 3D-imaging system using an intensified CCD camera was developed, without use of glue. An extra-low light detection 3D-imaging system using an intensified CCD camera was developed which was able to identify the location of any light activity in the stressed vacuum-gap, indicative of imminent device failure. The result of this work are highly encouraging in that an approximately 1000 micrometers tall spacer can support approximately 18 kV, at least 80 percent above the expected operational voltage of high voltage FEDs. However, it is likely that the breakdown strength can degrade in the presence of electronic bombardment from the field emitted array in an FED - a subject for future investigations in our laboratory.
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