EpiEL: electroluminescence directly on LED epiwafers

Max Xianyun Ma; Helen Jinghong Jia

doi:10.1117/12.731517

14 September 2007 EpiEL: electroluminescence directly on LED epiwafers

Max Xianyun Ma, Helen Jinghong Jia

Proceedings Volume 6669, Seventh International Conference on Solid State Lighting; 666910 (2007) https://doi.org/10.1117/12.731517
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

A LED material evaluation technology called EpiEL was introduced to measure electroluminescence (EL) directly on LED epiwafers. Based on EpiEL technology, a virtual LED device fabrication & characterization system has been developed which can be used to measure LED device parameters on epiwafers without any costly and time-consuming device fabrication. As through a finished device, the system reveals not only the electro-luminescence (EL) but also the electrical properties of the material. The developed EpiEL mapping system can rapidly obtain EL spectrum, LIV, output characteristics, wavelength & FWHM shift curves, as well as wafer-level uniformity about slope quantum efficiency, emission intensity, peak/dominant wavelength (WLP/WLD), FWHM, driving voltage/current, etc... EL measurement is usually performed on finished device (such as LED) since it needs a device structure to inject current. EpiEL mapping system overcomes this limitation by instantly forming a well-defined LED device inside the material. With such capability, EpiEL technology provides a unique electroluminescence solution for optoelectronic (especially emerging solid-state lighting) industry which brings better capability and efficiencies: instant response for material development and device-level quality control right after material growth.

Citation Download Citation

Max Xianyun Ma and Helen Jinghong Jia "EpiEL: electroluminescence directly on LED epiwafers", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 666910 (14 September 2007); https://doi.org/10.1117/12.731517

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