A powerful new inspection technology enables the excursion control of fast patterning processes. Full images of 300mm
wafers are captured and processed to extract CD uniformity information of contact hole and line-space patterns. Suitable
masking filters are applied to process and analyze the information from active logic and/or memory areas separately.
Characteristic process tool signatures can then be detected based on die, exposure field and wafer-level pattern variations.
Based on inspection times of a few seconds per wafer, rapid monitoring of 100% of processed wafers at full surface is
feasible. CD-imaging is demonstrated for the monitoring of key patterning process steps in gate formation. Use cases for
stand-alone, integrated and smart sampling strategies are discussed.
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