Domain-wall (DW) logic holds promise for compact and energy-efficient logic circuits. Indeed, fast DW motion driven by spin-orbit torque (SOT) and the Dzyaloshinskii-Moriya interaction (DMI) in magnetic/heavy-metal multilayers led to the experimental demonstration of current-driven DW logic circuits by magnetic imaging. Advancing towards applications, we present DW devices with electrical write/read using a magnetic tunnel junction (MTJ) stack with a hybrid free layer on 300-mm wafers. The first layer provides efficient spin-transfer torque (STT) and high tunneling magnetoresistance (TMR), while the second layer enables fast SOT-driven DW motion. It allows full electrical control of nanoscale DW devices, involving write/read at input/output MTJs and SOT-driven propagation between them. Finally, to alleviate challenges in current-driven DW motion, we present a concept of chirally coupled MTJs through DMI. This enables current-free information processing in compact inverter and minority gates.
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