Dr. Hemang P. Jani Profile

Dr. Hemang P. Jani

Senior Optical Sensing Engineer at ASML

SPIE Involvement:

Engineering, Science, and Technology Policy Committee | Scholarship Committee | Author | Science Fair Judge

Area of Expertise:

Femtosecond Ti:Sapphire Laser , Pump-Probe Spectroscopy , Ultrafast Spectroscopy , Qauntum Dots , DUV lithography , Waferl Alignment Sensor

Publications (6)

Proceedings Article | 7 March 2022 Presentation + Paper

Ultrafast responses of uniform- and gradient-doped GaAs photocathodes: from theory to experiment

Rui Zhou, Hemang Jani, Yijun Zhang, Yunsheng Qian, Lingze Duan

Proceedings Volume 11999, 119990C (2022) https://doi.org/10.1117/12.2607632

KEYWORDS: Gallium arsenide, Doping, Instrument modeling, Diffusion, Reflectivity, Quantum efficiency, Ultrafast phenomena, Picosecond phenomena, Femtosecond phenomena, Semiconductors

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Proceedings Article | 27 February 2020 Presentation + Paper

Pump-probe study of ultrafast response of GaAs photocathodes grown by MOCVD and MBE

Hemang Jani, Rui Zhou, Yijun Zhang, Yunsheng Qian, Lingze Duan

Proceedings Volume 11278, 112780R (2020) https://doi.org/10.1117/12.2547350

KEYWORDS: Metalorganic chemical vapor deposition, Diffusion, Gallium arsenide, Reflectivity, Quantum efficiency, Doping, Ultrafast phenomena, Picosecond phenomena, Molecular beam epitaxy, Carrier dynamics, Ultrafast laser spectroscopy

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SPIE Journal Paper | 13 March 2019

Comparative study of cesium adsorption on GaN planar and nanowire photocathodes

Zesen Liu, Liang Chen, Shuqin Zhang, Shalu Zhu, Qingyang Meng, Yunsheng Qian, Hemang Jani, Lingze Duan

JNP, Vol. 13, Issue 01, 016011, (March 2019) https://doi.org/10.1117/12.10.1117/1.JNP.13.016011

KEYWORDS: Gallium nitride, Cesium, Nanowires, Adsorption, Chemical species, Gallium, Quantum efficiency, Bridges, Optoelectronics, Tolerancing

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Proceedings Article | 27 February 2019 Paper

Wavelength-resolved pump-probe transient-reflectivity characterization of optoelectronic devices

Hemang Jani, Lingze Duan

Proceedings Volume 10916, 109161V (2019) https://doi.org/10.1117/12.2508589

KEYWORDS: Reflectivity, Gallium arsenide, Optoelectronic devices, Ultrafast phenomena, Picosecond phenomena, Carrier dynamics, Doping, Signal processing, Physics, Femtosecond phenomena

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Proceedings Article | 22 February 2018 Presentation + Paper

Femtosecond pump-probe study of negative electron affinity GaAs/AlGaAs photocathodes

Hemang Jani, Liang Chen, Lingze Duan

Proceedings Volume 10530, 105300X (2018) https://doi.org/10.1117/12.2291653

KEYWORDS: Doping, Reflectivity, Gallium arsenide, Carrier dynamics, Femtosecond phenomena, Ultrafast phenomena, Quantum efficiency, Diffusion, Picosecond phenomena, Electron transport

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