Paper
27 February 2019 Wavelength-resolved pump-probe transient-reflectivity characterization of optoelectronic devices
Hemang Jani, Lingze Duan
Author Affiliations +
Abstract
Significant advance has been made over the last decade in the development of broadband optoelectronic devices based on novel technologies such as 2D materials, metamaterials, plasmonics, negative electron affinity photoemission, etc. Understanding carrier dynamics in such devices, especially carrier relaxation and transportation near device surfaces, requires time-resolved, broadband reflective spectroscopy with femtosecond temporal resolutions. Femtosecond pump-probe reflectivity measurement (PPRM) has long been used to study carrier dynamics in semiconductor devices. However, conventional PPRM lacks the necessary bandwidth and the ability to make spectroscopic measurement. In this presentation, we report the demonstration of wavelength-resolved transient reflectivity measurement using a ultrabroad-band few-cycle pump-probe system. The system allows device transient reflectivity to be mapped onto a two-dimensional space formed by time and wavelength, providing a comprehensive characterization of ultrafast carrier dynamics. Preliminary results based on a GaAs substrate and GaAs/AlGaAs layered structures have offered interesting insights into device dynamics that otherwise would not be clear. These results demonstrate the feasibility of performing wavelength-resolved transient reflectivity measurement and the effectiveness of this technique in characterizing broadband optoelectronic devices.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hemang Jani and Lingze Duan "Wavelength-resolved pump-probe transient-reflectivity characterization of optoelectronic devices", Proc. SPIE 10916, Ultrafast Phenomena and Nanophotonics XXIII, 109161V (27 February 2019); https://doi.org/10.1117/12.2508589
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reflectivity

Gallium arsenide

Optoelectronic devices

Picosecond phenomena

Ultrafast phenomena

Carrier dynamics

Doping

Back to Top