Prof. Giacinta Parish Profile

Prof. Giacinta Parish

Associate Dean, Research at Univ of Western Australia

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 30 December 2008 Paper

An in-situ monitoring system for characterizing porous silicon growth

David Wyndham, Tim James, Gene Lim, Gia Parish, Charlie Musca, Adrian Keating

Proceedings Volume 7267, 72670R (2008) https://doi.org/10.1117/12.817420

KEYWORDS: Silicon, Refractive index, Silicon films, Semiconducting wafers, Reflectivity, Etching, Data modeling, Scanning electron microscopy, Semiconductor lasers, Doping

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Proceedings Article | 2 April 2004 Paper

Investigations of ohmic contacts to reactive ion-etched p-type GaN

Giacinta Parish, L. Watson, Gilberto Umana Membreno, Brett Nener

Proceedings Volume 5276, (2004) https://doi.org/10.1117/12.523252

KEYWORDS: Annealing, Gallium nitride, Resistance, Etching, Semiconducting wafers, Reactive ion etching, Doping, Metals, Ultraviolet radiation, Nitrogen

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Proceedings Article | 30 March 2004 Paper

Magnetoresistance characteristics of gamma-irradiated Al0.35Ga0.65N/GaN HFETs

Gilberto Umana-Membreno, John Dell, Giacinta Parish, Brett Nener, Lorenzo Faraone, Ramakhrishna Ventury, Umesh Mishra

Proceedings Volume 5274, (2004) https://doi.org/10.1117/12.527255

KEYWORDS: Gamma radiation, Resistance, Gallium nitride, Magnetism, Aluminum, Heterojunctions, Interfaces, Field effect transistors, Gallium, Diodes

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Proceedings Article | 21 November 2001 Paper

Simple wet etching of GaN

Giacinta Parish, Paul Scali, Sue Spaargaren, Brett Nener

Proceedings Volume 4592, (2001) https://doi.org/10.1117/12.448955

KEYWORDS: Etching, Gallium nitride, Semiconducting wafers, Photomasks, Platinum, Wet etching, Electrons, Lamps, Ultraviolet radiation, Oxides

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Proceedings Article | 19 November 2001 Paper

60Co gamma-irradiation-induced defects in MOCVD n-GaN

Gilberto Umana-Membreno, John Dell, Giacinta Parish, Lorenzo Faraone, Umesh Mishra

Proceedings Volume 4593, (2001) https://doi.org/10.1117/12.448853

KEYWORDS: Annealing, Gamma radiation, Temperature metrology, Gallium nitride, Electrons, Diodes, Metalorganic chemical vapor deposition, Nitrogen, Convolution, Capacitance

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Proceedings Article | 8 October 1999 Paper

Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures

Gilberto Umana-Membreno, John Dell, Lorenzo Faraone, Yi-Feng Wu, Giacinta Parish, Umesh Mishra

Proceedings Volume 3893, (1999) https://doi.org/10.1117/12.368457

KEYWORDS: Field effect transistors, Electrons, Resistance, Ionization, Heterojunctions, Temperature metrology, Gallium nitride, Sapphire, Silicon, Transistors

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