Investigations of ohmic contacts to reactive ion-etched p-type GaN

Giacinta Parish; L. M. Watson; Gilberto Umana Membreno; Brett Douglas Nener

doi:10.1117/12.523252

2 April 2004 Investigations of ohmic contacts to reactive ion-etched p-type GaN

Giacinta Parish, L. M. Watson, Gilberto Umana Membreno, Brett Douglas Nener

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.523252
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

This paper will detail investigations into rapid thermal annealing (RTA) treatment of ohmic contacts to reactive ion etch (RIE) damaged p-type GaN. It was found that annealing at moderate temperatures in N₂ atmosphere can improve the ohmic nature of contacts to RIE-damaged p-GaN. After chlorine-based RIE treatment of the p-GaN surface the sheet resistance and contact resistivity of the ohmic contact metallisation scheme increased, and the contacts became extremely non-ohmic. After RTA treatment in N₂ atmosphere at 550°C, linearity of the I-V curves was substantially improved, and the contact resistivity decreased. This improvement is most likely related to improvements in the metal-GaN interface and/or improvements in the bulk material when protected by the contact metal. Unprotected surfaces were further damaged (manifested as higher sheet resistance) by the annealing procedure.

Citation Download Citation

Giacinta Parish, L. M. Watson, Gilberto Umana Membreno, and Brett Douglas Nener "Investigations of ohmic contacts to reactive ion-etched p-type GaN", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.523252

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