CONFERENCE PROCEEDINGS
Advanced Search
Craig Ward
at Oxford Instruments
SPIE Involvement:
Author
Publications (1)
Proceedings Article | 23 March 2020 Paper
Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance
Mark Dineen, Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Stephanie Baclet, Craig Ward, Tania Hemakumara
Proceedings Volume 11329, 113290I (2020) https://doi.org/10.1117/12.2558732
KEYWORDS: Etching, Gallium nitride, Plasma, Semiconducting wafers, Argon, Reactive ion etching, Field effect transistors, Chlorine
SIGN IN TO:
  • View contact details
UPDATE YOUR PROFILE
Is this your profile? Update it now.
Sign into your SPIE.org account
Don’t have a profile and want one?
Create an account on SPIE.org
Advertisement
Advertisement
Back to Top