New advanced BARC and gap fill materials based on sublimate reduction for 193nm lithography

Satoshi Takei; Tetsuya Shinjo; Yasushi Sakaida; Yusuke Horiguchi; Yasuyuki Nakajima

doi:10.1117/12.655398

11 April 2006 New advanced BARC and gap fill materials based on sublimate reduction for 193nm lithography

Satoshi Takei, Tetsuya Shinjo, Yasushi Sakaida, Yusuke Horiguchi, Yasuyuki Nakajima

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532Q (2006) https://doi.org/10.1117/12.655398
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Innovative technologies are required by integrated circuit manufacturers to create smaller feature sizes on chips. According to the semiconductor roadmap, feature sizes are slated to be as small as 45nm in 2007, and sizes will be continued to decrease in the following years. Suitable absorbance, Lower etch resistance, straight photoresist profiles, wider D.O.F., thinner film thickness, more effective barrier properties to reduce resist poisoning, and sublimate reduction for defect free coating are the major concerns to be taken into consideration for new BARC and gap fill materials. In this paper, the study of sublimate reduction in the new BARC and gap fill materials was investigated. The effect of sublimate reduction from BARC in bake process is related to decrease defect number. We will introduce new BARC and gap fill material consisted of the polymers with self crosslink-reaction system. In addition of sublimate reduction data, resist profiles and 130 nm via fill performance in via- first dual damascene process presented here would show clearly these materials are ready to be investigated into mass production of 90 nm node IC devices and beyond.

Citation Download Citation

Satoshi Takei, Tetsuya Shinjo, Yasushi Sakaida, Yusuke Horiguchi, and Yasuyuki Nakajima "New advanced BARC and gap fill materials based on sublimate reduction for 193nm lithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532Q (11 April 2006); https://doi.org/10.1117/12.655398

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