Highly absorbing ARC for DUV lithography

Edward K. Pavelchek; James D. Meador; Douglas J. Guerrero; James E. Lamb III; Ajit Kache; Manuel doCanto; Timothy G. Adams; David R. Stark; Daniel A. Miller

doi:10.1117/12.241867

14 June 1996 Highly absorbing ARC for DUV lithography

Edward K. Pavelchek, James D. Meador, Douglas J. Guerrero, James E. Lamb III, Ajit Kache, Manuel doCanto, Timothy G. Adams, David R. Stark, Daniel A. Miller

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241867
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The properties of a new anti-reflective coating for 248 nm lithography are described. It is formed by thermally cross-linking a spin-on organic coating, and has an absorbance greater than 12/micrometers. It is compatible with UVIIHS and APEX-E photoresists. Thin films (less than 600 angstrom over silicon substrates) are found to completely suppress standing waves, to reduce EO swing curves to less than 3%, and to offer good CD control over typical field oxide topography. The etch rate was found to be comparable to that of the APEX-E photoresist.

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Edward K. Pavelchek, James D. Meador, Douglas J. Guerrero, James E. Lamb III, Ajit Kache, Manuel doCanto, Timothy G. Adams, David R. Stark, and Daniel A. Miller "Highly absorbing ARC for DUV lithography", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241867

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