ZnO nanorods for electronic nanodevice applications

Won Il Park; J. Yoo; H.-J. Kim; C. H. Lee; Gyu-Chul Yi

doi:10.1117/12.659650

2 March 2006 ZnO nanorods for electronic nanodevice applications

Won Il Park, J. Yoo, H.-J. Kim, C. H. Lee, Gyu-Chul Yi

Proceedings Volume 6122, Zinc Oxide Materials and Devices; 612206 (2006) https://doi.org/10.1117/12.659650
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. Electrical characteristics of several ZnO nanorod MOSFETs are compared in this proceeding. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm²/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process. These devices have been used for realization of ZnO nanorod logic gates.

Citation Download Citation

Won Il Park, J. Yoo, H.-J. Kim, C. H. Lee, and Gyu-Chul Yi "ZnO nanorods for electronic nanodevice applications", Proc. SPIE 6122, Zinc Oxide Materials and Devices, 612206 (2 March 2006); https://doi.org/10.1117/12.659650

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