Logic device scaling trend in ITRS 2007

Kiyotaka Imai

doi:10.1117/12.796009

19 May 2008 Logic device scaling trend in ITRS 2007

Kiyotaka Imai

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702802 (2008) https://doi.org/10.1117/12.796009
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

Logic CMOS device scaling trend is described along the International Technology Roadmap for Semiconductors (ITRS) 2007 edition. For transistor performance improvement, geometrical scaling of gate length still plays an important role. At the same time, equivalent scaling such as metal gate and mobility enhancement is also indispensable. In order to break through the improvement limitation of planar bulk structure, new transistor structure such as FinFET will be introduced from 2010 or 2011 time frame. In long term, alternative materials and structures will be required to realize extremely high ballistic transport.

Citation Download Citation

Kiyotaka Imai "Logic device scaling trend in ITRS 2007", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702802 (19 May 2008); https://doi.org/10.1117/12.796009

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