Implementation of the ArF resists based on VEMA for sub-100-nm device

Hyun-Woo Kim; Sook Lee; Sang-Jun Choi; Sung-Ho Lee; Yool Kang; Sang-Gyun Woo; Dongseok Nam; Yun-Sook Chae; Jisoo Kim; Joo-Tae Moon; Robert J. Kavanagh; George G. Barclay

doi:10.1117/12.474253

24 July 2002 Implementation of the ArF resists based on VEMA for sub-100-nm device

Hyun-Woo Kim, Sook Lee, Sang-Jun Choi, Sung-Ho Lee, Yool Kang, Sang-Gyun Woo, Dongseok Nam, Yun-Sook Chae, Jisoo Kim, Joo-Tae Moon, Robert J. Kavanagh, George G. Barclay

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474253
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

It is expected that ArF lithography will be introduced for device manufacturing for sub-100 nm nodes, as high NA ArF step and scan systems (NA=0.75) become available. We previously reported on a platform, based on a vinyl ether- maleic anhydride (VEMA) alternating polymer system. This platform demonstrated both good resolution and high dry etch resistance in comparison to other platforms based on acrylate and cyclic-olefin-maleic anhydride (COMA) polymer systems. The VEMA platform has been continuously improved to meet the increasing requirements, such as resolution, depth of focus (DOF) iso-dense bias, and post-etch roughness for real device manufacturing. This VEMA system is being implemented for sub-100 nm device with high NA (NA=0.75) ArF exposure systems. In this paper, recent experimental results are reviewed.

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Hyun-Woo Kim, Sook Lee, Sang-Jun Choi, Sung-Ho Lee, Yool Kang, Sang-Gyun Woo, Dongseok Nam, Yun-Sook Chae, Jisoo Kim, Joo-Tae Moon, Robert J. Kavanagh, and George G. Barclay "Implementation of the ArF resists based on VEMA for sub-100-nm device", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474253

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