Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone

Hyun-Woo Kim; Sang-Jun Choi; Dong-Won Jung; Sook Lee; Sung-Ho Lee; Yool Kang; Sang-Gyun Woo; Joo-Tae Moon; Robert J. Kavanagh; George G. Barclay; George W. Orsula; Joe Mattia; Stefan Caporale; Timothy G. Adams; Tsutomu Tanaka; Doris Kang

doi:10.1117/12.436840

24 August 2001 Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone

Hyun-Woo Kim, Sang-Jun Choi, Dong-Won Jung, Sook Lee, Sung-Ho Lee, Yool Kang, Sang-Gyun Woo, Joo-Tae Moon, Robert J. Kavanagh, George G. Barclay, George W. Orsula, Joe Mattia, Stefan Caporale, Timothy G. Adams, Tsutomu Tanaka, Doris Kang

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436840
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

ArF lithography, in combination with chemically amplified resists, has been investigated as one of the most promising technologies for producing patterns below 100 nm. In considering the polymer matrix for 193 nm photoresist applications, factors such as sensitivity, transparency to 193 nm radiation, adhesion to substrate, dry etch resistance, ease of synthesis, and availability of monomers are very critical. In these respects, remarkable progress has been made in development of ArF resist material. Polymers of acrylic and methacrylic esters show good imaging performance at 193 nm, but have insufficient dry-etch resistance under oxide or nitride etch condition. On the other hand, cyclic olefin-maleic anhydride (COMA) alternating copolymers exhibit good dry etch resistance, but have poor resolution capability. We previously reported a new platform, based on a vinyl ether-maleic anhydride (VEMA) alternating polymer system, that demonstrated both good resolution and high dry etch resistance. In this paper, VEMA systems with improved lithographic performance are presented. The new platform (VEMA) showed good performance in resolution, depth of focus (DOF), iso-dense bias, and post-etch roughness. With conventional illumination (NA=0.6, sigma=0.7), 120 nm dense line/space patterns with 0.4 (mu) M DOF were resolved. And 90 nm L/S patterns 0.6 (mu) M DOF were resolved with off-axis illumination (NA=0.63). Another important factor to be considered for the dry-etch process is post-etch roughness. In the case of VEMA system a clean surface was observed after etch under oxide, nitride, and poly conditions. The VEMA resist system is regarded as one of the most production-worthy material for real device manufacture.

Citation Download Citation

Hyun-Woo Kim, Sang-Jun Choi, Dong-Won Jung, Sook Lee, Sung-Ho Lee, Yool Kang, Sang-Gyun Woo, Joo-Tae Moon, Robert J. Kavanagh, George G. Barclay, George W. Orsula, Joe Mattia, Stefan Caporale, Timothy G. Adams, Tsutomu Tanaka, and Doris Kang "Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436840

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available