Top surface imaging at 157-nm

Andrew Thomas Jamieson; Mark H. Somervell; Hoang Vi Tran; Raymond Jui-Pu Hung; Scott A. MacDonald; C. Grant Willson

doi:10.1117/12.436872

24 August 2001 Top surface imaging at 157-nm

Andrew Thomas Jamieson, Mark H. Somervell, Hoang Vi Tran, Raymond Jui-Pu Hung, Scott A. MacDonald, C. Grant Willson

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436872
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Top surface imaging (TSI) has had an interesting history. This process showed great promise in the late 1980's and several attempts were made to introduce it to full-scale manufacturing. Unfortunately, defect density problems limited the process and it fell from favor. TSI emerged again as an important part of the EUV and 193 nm strategies in the early stages of those programs because it offered a solution to the high opacity of common resist materials at both wavelengths. A flurry of research in both areas identified the seemingly insurmountable problem of line edge roughness than typical single layer resist systems. This has largely been due to the development of polymers specifically tailored for this end use. The optimum materials must be moderately transparent and have high Tg's in the silylated state. The 157nm program has much in common with the early stages of the 193nm program. The optical density of even 193nm resist materials at 157nm is far too high to allow their use in single layer applications. The less stringent optical density of even 193nm resist materials at 157nm is far too high to allow their use in single layer applications. The less stringent optical density requirements of TSI make it a potentially viable imaging scheme for use at 157nm. Various TSI materials, including the traditional poly(t-BOC- hydroxystyrene), as well as novel aliphatic cyclic polymers bearing bis-trifluoromethyl carbinol substituents, have been investigated for use at 157 nm, and smooth high-resolution images have been generated.

Citation Download Citation

Andrew Thomas Jamieson, Mark H. Somervell, Hoang Vi Tran, Raymond Jui-Pu Hung, Scott A. MacDonald, and C. Grant Willson "Top surface imaging at 157-nm", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436872

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available