Dr. Mark H. Somervell Profile

Dr. Mark H. Somervell

Director of Technology and SMTS at Tokyo Electron America Inc

SPIE Involvement:

Conference Program Committee | Author | Editor

Publications (42)

Proceedings Article | 1 May 2023 Paper

Paper

Advanced development methods for high-NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Yuhei Kuwahara, Arnaud Dauendorffer, Soichiro Okada, Seiji Fujimoto, Shinichiro Kawakami, Satoru Shimura, Makoto Muramatsu, Kayoko Cho, Xiang Liu, Kathleen Nafus, Michael Carcasi, Ankur Agarwal, Mark Somervell, Lior Huli, Kanzo Kato, Michael Kocsis, Peter De Schepper, Stephen Meyers, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Chris Anderson, Patrick Naulleau

Proceedings Volume 12498, 1249806 (2023) https://doi.org/10.1117/12.2655928

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Line edge roughness, Lithography, Etching

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One of the key steps in the pattern formation chain of (extreme ultraviolet) EUV lithography is the development process to resolve the resist pattern after EUV exposure. A simple traditional development process might not be sufficient to achieve the requirements of an ultra-high-resolution feature with low defect levels in high numerical aperture (NA) EUV lithography. In our previous literature, a new development method named ESPERT^TM (Enhanced Sensitivity develoPER Technology^TM) has been introduced to improve the performance of metal oxide resists (MOR) for 0.33 NA EUV lithography by breaking the dose-roughness trade-off. In this work, this development technique was optimised for high-NA lithography to not only keep the advantages of previous ESPERT^TM version, but also reduce the defect levels at a higher EUV sensitivity. This is made possible thanks to the capability of the new version of ESPERT^TM that can easily remove the residue (undeveloped resist) at low exposure dose area to enhance the developing contrast. Using 0.33 NA EUV scanners at imec on 16-nm half-pitch (HP) line/space (L/S) patterns, with the new development method, EUV dose-to-size (DtS) was reduced roughly 16%, and total after-development-inspection (ADI) defects was reduced by a factor of approximately 7, simultaneously. In another condition, DtS was reduced from 44.2 to 28.4 mJ/cm² (an improvement of 36%), while the number of after-etch-inspection (AEI) single-bridge defects was reduced by half, simultaneously. Using the 0.5 NA exposure tool at Lawrence Berkeley National Laboratory with this new development method, the exposure sensitivity and line-width-roughness (LWR) were both improved by 30% and 21%, respectively. An 8-nm-HP L/S pattern was also successfully printed by this high NA tool. Using a 150 kV electron-beam (EB) lithography system, a 12-nm-HP of pillars was successfully printed on a 22-nm-thick MOR resist with ESPERT^TM. With all the advantages of having a high exposure sensitivity, a low defectivity, and an ultra-high-resolution capability, this new development method is expected to be a solution for high-NA EUV lithography.

Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Nano-scale effects of selective spin-on deposition

Ryan Burns, Yuanyi Zhang, Colton D'Ambra, Mark Somervell, Sean Berglund, Michael Carcasi, Lior Huli, Muramatsu Makoto, Rachel Segalman, Craig Hawker, Christopher Bates

Proceedings Volume 11612, 1161205 (2021) https://doi.org/10.1117/12.2583086

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Proceedings Article | 27 March 2017 Paper

Paper

DSA patterning options for logics and memory applications

Chi-Chun Liu, Elliott Franke, Yann Mignot, Scott LeFevre, Stuart Sieg, Cheng Chi, Luciana Meli, Doni Parnell, Kristin Schmidt, Martha Sanchez, Lovejeet Singh, Tsuyoshi Furukawa, Indira Seshadri, Ekmini Anuja De Silva, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Robert Bruce, Mark Somervell, Daniel Sanders, Nelson Felix, John Arnold, David Hetzer, Akiteru Ko, Andrew Metz, Matthew Colburn, Daniel Corliss

Proceedings Volume 10146, 1014603 (2017) https://doi.org/10.1117/12.2260479

KEYWORDS: Directed self assembly, Plasma etching, Optical lithography, Etching, Logic, Lithography, Manufacturing, Nanofabrication, Silicon, Metals, Extreme ultraviolet, Line edge roughness, Optical alignment, Critical dimension metrology

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Proceedings Article | 22 March 2016 Paper

Paper

DSA materials contributions to the defectivity performance of 14nm half-pitch LiNe flow at IMEC

Hari Pathangi, Varun Vaid, Boon Teik Chan, Nadia Vandenbroeck, Jin Li, Sung Eun Hong, Yi Cao, Baskaran Durairaj, Guanyang Lin, Mark Somervell, Takahiro Kitano, Ryota Harukawa, Kaushik Sah, Andrew Cross, Hareen Bayana, Lucia D’Urzo, Roel Gronheid

Proceedings Volume 9777, 97770G (2016) https://doi.org/10.1117/12.2219936

KEYWORDS: Directed self assembly, Metrology, Optical lithography, Silicon, Semiconducting wafers, Etching, Bridges, Polymers, Manufacturing, Scanning electron microscopy, Epitaxy, Lithography, Thin film coatings

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Proceedings Article | 22 March 2016 Paper

Paper

Pattern fidelity improvement of chemo-epitaxy DSA process for high-volume manufacturing

Makoto Muramatsu, Takanori Nishi, Gen You, Yusuke Saito, Yasuyuki Ido, Kiyohito Ito, Toshikatsu Tobana, Masanori Hosoya, Weichien Chen, Satoru Nakamura, Mark Somervell, Takahiro Kitano

Proceedings Volume 9777, 97770F (2016) https://doi.org/10.1117/12.2218595

KEYWORDS: Directed self assembly, Line edge roughness, High volume manufacturing, Bridges, Critical dimension metrology, Semiconductor manufacturing, Particles, Etching, Lithography, Oxides, Semiconducting wafers, Line width roughness, System on a chip, Optical lithography, Picosecond phenomena

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Proceedings Article | 22 March 2016 Paper

Paper

DSA patterning options for FinFET formation at 7nm node

Chi-Chun Liu, Elliott Franke, Fee Li Lie, Stuart Sieg, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Mark Somervell, Daniel Sanders, Nelson Felix, Michael Guillorn, Sean Burns, David Hetzer, Akiteru Ko, John Arnold, Matthew Colburn

Proceedings Volume 9777, 97770R (2016) https://doi.org/10.1117/12.2219670

KEYWORDS: Directed self assembly, Optical lithography, Lithography, Line edge roughness, Etching, Silicon, Image processing, Neodymium, Polymethylmethacrylate

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Proceedings Article | 20 March 2015 Paper

Paper

Driving DSA into volume manufacturing

Mark Somervell, Takashi Yamauchi, Soichiro Okada, Tadatoshi Tomita, Takanori Nishi, Shinichiro Kawakami, Makoto Muramatsu, Etsuo Iijima, Vinayak Rastogi, Takeo Nakano, Fumiko Iwao, Seiji Nagahara, Hiroyuki Iwaki, Makiko Dojun, Koichi Yatsuda, Toshikatsu Tobana, Ainhoa Romo Negreira, Doni Parnell, Benjamen Rathsack, Kathleen Nafus, Jean-Luc Peyre, Takahiro Kitano

Proceedings Volume 9425, 94250Q (2015) https://doi.org/10.1117/12.2085776

KEYWORDS: Etching, Semiconducting wafers, Optical lithography, Polymethylmethacrylate, Line edge roughness, Manufacturing, Image processing, Ecosystems, Line width roughness, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Paper

Implementation of templated DSA for via layer patterning at the 7nm node

Roel Gronheid, Jan Doise, Joost Bekaert, Boon Teik Chan, Ioannis Karageorgos, Julien Ryckaert, Geert Vandenberghe, Yi Cao, Guanyang Lin, Mark Somervell, Germain Fenger, Daisuke Fuchimoto

Proceedings Volume 9423, 942305 (2015) https://doi.org/10.1117/12.2086090

KEYWORDS: Optical lithography, Photomasks, Etching, Polymethylmethacrylate, Lithography, Double patterning technology, Scanning electron microscopy, Picosecond phenomena, Metals, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Paper

Fin formation using graphoepitaxy DSA for FinFET device fabrication

Chi-Chun Liu, Fee Li Lie, Vinayak Rastogi, Elliott Franke, Nihar Mohanty, Richard Farrell, Hsinyu Tsai, Kafai Lai, Melih Ozlem, Wooyong Cho, Sung Gon Jung, Jay Strane, Mark Somervell, Sean Burns, Nelson Felix, Michael Guillorn, David Hetzer, Akiteru Ko, Matthew Colburn

Proceedings Volume 9423, 94230S (2015) https://doi.org/10.1117/12.2086053

KEYWORDS: Etching, Lithography, Silicon, Oxides, Atomic layer deposition, Scanning electron microscopy, Polymethylmethacrylate, Image processing, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Defect reduction and defect stability in IMEC's 14nm half-pitch chemo-epitaxy DSA flow

Roel Gronheid, Paulina Rincon Delgadillo, Hari Pathangi, Dieter Van den Heuvel, Doni Parnell, Boon Teik Chan, Yu-Tsung Lee, Lieve Van Look, Yi Cao, YoungJun Her, Guanyang Lin, Ryota Harukawa, Venkat Nagaswami, Lucia D'Urzo, Mark Somervell, Paul Nealey

Proceedings Volume 9049, 904905 (2014) https://doi.org/10.1117/12.2047265

KEYWORDS: Etching, Inspection, Silicon, Semiconducting wafers, Scanning electron microscopy, Defect inspection, Polymethylmethacrylate, Particles, Critical dimension metrology, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Evaluation of integration schemes for contact-hole grapho-epitaxy DSA: a study of substrate and template affinity control

A. Romo-Negreira, T. Younkin, R. Gronheid, S. Demuynck, N. Vandenbroeck, T. Seo, D. Guerrero, D. Parnell, M. Muramatsu, S. Kawakami, T. Yamauchi, K. Nafus, M. Somervell

Proceedings Volume 9049, 90491L (2014) https://doi.org/10.1117/12.2046119

KEYWORDS: Etching, Semiconducting wafers, Chemical vapor deposition, Polymers, Fourier transforms, Polymethylmethacrylate, Lithography, Resistance, Picosecond phenomena, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation

Chi-Chun Liu, Cristina Estrada-Raygoza, Hong He, Michael Cicoria, Vinayak Rastogi, Nihar Mohanty, Hsinyu Tsai, Anthony Schepis, Kafai Lai, Robin Chao, Derrick Liu, Michael Guillorn, Jason Cantone, Sylvie Mignot, Ryoung-Han Kim, Joy Cheng, Melia Tjio, Akiteru Ko, David Hetzer, Mark Somervell, Matthew Colburn

Proceedings Volume 9049, 904909 (2014) https://doi.org/10.1117/12.2046462

KEYWORDS: Etching, Silicon, Polymethylmethacrylate, Semiconducting wafers, Scatterometry, Image processing, 3D modeling, Line edge roughness, Defect detection, Directed self assembly

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Proceedings Article | 27 March 2014 Paper

Paper

High-volume manufacturing equipment and processing for directed self-assembly applications

Mark Somervell, Takashi Yamauchi, Soichiro Okada, Tadatoshi Tomita, Takanori Nishi, Etsuo Iijima, Takeo Nakano, Takumi Ishiguro, Seiji Nagahara, Hiroyuki Iwaki, Makiko Dojun, Mariko Ozawa, Koichi Yatsuda, Toshikatsu Tobana, Ainhoa Romo Negreira, Doni Parnell, Shinchiro Kawakami, Makoto Muramatsu, Benjamen Rathsack, Kathleen Nafus, Jean-Luc Peyre, Takahiro Kitano

Proceedings Volume 9051, 90510N (2014) https://doi.org/10.1117/12.2045975

KEYWORDS: Semiconducting wafers, Etching, Polymethylmethacrylate, Thin film coatings, High volume manufacturing, Ecosystems, Lithography, Manufacturing, Manufacturing equipment, Directed self assembly

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Proceedings Article | 27 March 2014 Paper

Paper

Process optimization of templated DSA flows

Roel Gronheid, Joost Bekaert, Vijaya-Kumar Murugesan Kuppuswamy, Nadia Vandenbroeck, Jan Doise, Yi Cao, Guanyang Lin, Safak Sayan, Doni Parnell, Mark Somervell

Proceedings Volume 9051, 90510I (2014) https://doi.org/10.1117/12.2047266

KEYWORDS: System on a chip, Scanning electron microscopy, Optical lithography, Etching, Photomasks, Thin film coatings, Coating, Metrology, Materials processing, Directed self assembly

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SPIE Journal Paper | 12 March 2014

Mesoscale modeling: a study of particle generation and line-edge roughness

Siddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger Bonnecaze, Chris Mack, C. Grant Willson

JM3, Vol. 13, Issue 01, 013012, (March 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.013012

KEYWORDS: Particles, Polymers, Line edge roughness, Monte Carlo methods, Diffusion, Photoresist developing, Photoresist materials, Lithography, 3D modeling, Molecules

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Proceedings Article | 29 March 2013 Paper

Paper

Progress in directed self-assembly hole shrink applications

Todd Younkin, Roel Gronheid, Paulina Rincon Delgadillo, Boon Teik Chan, Nadia Vandenbroeck, Steven Demuynck, Ainhoa Romo-Negreira, Doni Parnell, Kathleen Nafus, Shigeru Tahara, Mark Somervell

Proceedings Volume 8682, 86820L (2013) https://doi.org/10.1117/12.2012353

KEYWORDS: Etching, Semiconducting wafers, Polymers, Polymethylmethacrylate, Lithography, Wet etching, Dry etching, Chemical vapor deposition, Scanning electron microscopy, Directed self assembly

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Proceedings Article | 29 March 2013 Paper

Paper

Advances in directed self assembly integration and manufacturability at 300 mm

Benjamen Rathsack, Mark Somervell, Makato Muramatsu, Keiji Tanouchi, Takahiro Kitano, Eiichi Nishimura, Koichi Yatsuda, Seiji Nagahara, Hiroyuki Iwaki, Keiji Akai, Mariko Ozawa, Ainhoa Romo Negreira, Shigeru Tahara, Kathleen Nafus

Proceedings Volume 8682, 86820K (2013) https://doi.org/10.1117/12.2012018

KEYWORDS: Etching, Polymethylmethacrylate, Manufacturing, Picosecond phenomena, Ecosystems, Semiconducting wafers, Inspection, Directed self assembly, Materials processing, Polymers

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Proceedings Article | 29 March 2013 Paper

Paper

Rectification of EUV-patterned contact holes using directed self-assembly

Roel Gronheid, Arjun Singh, Todd Younkin, Paulina Rincon Delgadillo, Paul Nealey, Boon Teik Chan, Kathleen Nafus, Ainhoa Romo Negreira, Mark Somervell

Proceedings Volume 8682, 86820A (2013) https://doi.org/10.1117/12.2012667

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Polymethylmethacrylate, Optical lithography, Critical dimension metrology, Photoresist processing, Image processing, Neodymium, Scanning electron microscopy, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Paper

Fabrication of 28nm pitch Si fins with DSA lithography

Gerard Schmid, Richard Farrell, Ji Xu, Chanro Park, Moshe Preil, Vidhya Chakrapani, Nihar Mohanty, Akiteru Ko, Michael Cicoria, David Hetzer, Mark Somervell, Benjamen Rathsack

Proceedings Volume 8680, 86801F (2013) https://doi.org/10.1117/12.2011607

KEYWORDS: Optical lithography, Etching, Silicon, Photoresist materials, Finite element methods, Picosecond phenomena, Coating, Polymethylmethacrylate, Lithography, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Paper

Using process monitor wafers to understand directed self-assembly defects

Yi Cao, YoungJun Her, Paulina Delgadillo, Nadia Vandenbroeck, Roel Gronheid, Boon Teik Chan, Yukio Hashimoto, Ainhoa Romo, Mark Somervell, Kathleen Nafus, Paul Nealey

Proceedings Volume 8680, 86801S (2013) https://doi.org/10.1117/12.2011658

KEYWORDS: Semiconducting wafers, Plasma etching, Lithography, Etching, Polymethylmethacrylate, Plasma, Polymers, Photoresist materials, Directed self assembly, Particles

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Proceedings Article | 26 March 2013 Paper

Paper

Directed self-assembly process implementation in a 300mm pilot line environment

Chi-Chun Liu, I. Cristina Estrada-Raygoza, Jassem Abdallah, Steven Holmes, Yunpeng Yin, Anthony Schepis, Michael Cicoria, David Hetzer, Hsinyu Tsai, Michael Guillorn, Melia Tjio, Joy Cheng, Mark Somervell, Matthew Colburn

Proceedings Volume 8680, 86801G (2013) https://doi.org/10.1117/12.2011610

KEYWORDS: Critical dimension metrology, Etching, Line width roughness, Semiconducting wafers, Optical lithography, Lithography, Chemical reactions, Photoresist processing, Polymethylmethacrylate, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Paper

Process sensitivities in exemplary chemo-epitaxy directed self-assembly integration

Paulina Rincon Delgadillo, Roel Gronheid, Guanyang Lin , Yi Cao, Ainhoa Romo, Mark Somervell , Kathleen Nafus , Paul Nealey

Proceedings Volume 8680, 86801H (2013) https://doi.org/10.1117/12.2011446

KEYWORDS: Chemistry, Coating, Etching, Fourier transforms, Lithography, Materials processing, Nanolithography, Thin film coatings, Picosecond phenomena, Directed self assembly

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SPIE Journal Paper | 10 July 2012

Frequency multiplication of lamellar phase block copolymers with grapho-epitaxy directed self-assembly sensitivity to prepattern

Roel Gronheid, Paulina Rincon Delgadillo, Ivan Pollentier, Paul Nealey, Todd Younkin, Mark Somervell, Joshua Hooge, Kathleen Nafus

JM3, Vol. 11, Issue 3, 031303, (July 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.031303

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Optical lithography, Reticles, Image processing, Coating, Photoresist processing, Photomasks, Photoresist materials, Directed self assembly

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SPIE Journal Paper | 9 July 2012

Nanopatterning of diblock copolymer directed self-assembly lithography with wet development

Makoto Muramatsu, Mitsuaki Iwashita, Takahiro Kitano, Takayuki Toshima, Mark Somervell, Yuriko Seino, Daisuke Kawamura, Masahiro Kanno, Katsutoshi Kobayashi, Tsukasa Azuma

JM3, Vol. 11, Issue 3, 031305, (July 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.031305

KEYWORDS: Polymethylmethacrylate, Picosecond phenomena, Ultraviolet radiation, Lithography, Mercury, Nanostructures, Oxygen, Lamps, Scanning electron microscopy, Directed self assembly

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SPIE Journal Paper | 9 July 2012

Implementation of a chemo-epitaxy flow for directed self-assembly on 300-mm wafer processing equipment

Paulina Rincon Delgadillo, Christopher Thode, Paul Nealey, Roel Gronheid, Hengpeng Wu, Yi Cao, Mark Neisser, Mark Somervell, Kathleen Nafus

JM3, Vol. 11, Issue 3, 031302, (July 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.031302

KEYWORDS: Semiconducting wafers, Etching, Nanostructures, Scanning electron microscopy, Annealing, Plasma etching, Photoresist processing, Chemistry, Materials processing, Directed self assembly

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Proceedings Article | 21 March 2012 Paper

Paper

Pattern scaling with directed self assembly through lithography and etch process integration

Benjamen Rathsack, Mark Somervell, Josh Hooge, Makoto Muramatsu, Keiji Tanouchi, Takahiro Kitano, Eiichi Nishimura, Koichi Yatsuda, Seiji Nagahara, Iwaki Hiroyuki, Keiji Akai, Takashi Hayakawa

Proceedings Volume 8323, 83230B (2012) https://doi.org/10.1117/12.916311

KEYWORDS: Etching, Semiconducting wafers, Line edge roughness, Picosecond phenomena, Lithography, Polymers, Polymethylmethacrylate, Chemical analysis, Silicon, Directed self assembly

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Proceedings Article | 21 March 2012 Paper

Paper

All track directed self-assembly of block copolymers: process flow and origin of defects

Paulina Rincon Delgadillo, Roel Gronheid, Christopher Thode, Hengpeng Wu, Yi Cao, Mark Somervell, Kathleen Nafus, Paul Nealey

Proceedings Volume 8323, 83230D (2012) https://doi.org/10.1117/12.916410

KEYWORDS: Lithography, Inspection, Semiconducting wafers, Scanning electron microscopy, Chemical analysis, Plasma etching, Critical dimension metrology, Etching, Plasma, Directed self assembly

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Proceedings Article | 15 March 2012 Paper

Paper

Comparison of directed self-assembly integrations

Mark Somervell, Roel Gronheid, Joshua Hooge, Kathleen Nafus, Paulina Rincon Delgadillo, Chris Thode, Todd Younkin, Koichi Matsunaga, Ben Rathsack, Steven Scheer, Paul Nealey

Proceedings Volume 8325, 83250G (2012) https://doi.org/10.1117/12.916406

KEYWORDS: Semiconducting wafers, Image processing, Optical lithography, Thin film coatings, Lithography, Etching, Reticles, Scanners, Scanning electron microscopy, Directed self assembly

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Proceedings Article | 31 March 2010 Paper

Paper

Extension of 248 nm Monte Carlo, mesoscale models to 193 nm platforms

Michael Carcasi, Mark Somervell, Steven Scheer, Siddharth Chauhan, Jeffrey Strahan, C. Willson

Proceedings Volume 7639, 76392K (2010) https://doi.org/10.1117/12.846658

KEYWORDS: Systems modeling, Line edge roughness, Polymers, Diffusion, Calibration, Data modeling, Monte Carlo methods, Lithography, Molecular interactions, Stochastic processes

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Proceedings Article | 26 March 2010 Paper

Paper

Particle generation during photoresist dissolution

Siddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger Bonnecaze, Chris Mack, C. Grant Willson

Proceedings Volume 7639, 763933 (2010) https://doi.org/10.1117/12.848424

KEYWORDS: Particles, Polymers, Monte Carlo methods, Photoresist materials, Photoresist developing, Lithography, Molecules, Diffusion, 3D modeling, Line edge roughness

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Proceedings Article | 4 March 2010 Paper

Paper

Advances in dual-tone development for pitch frequency doubling

Carlos Fonseca, Mark Somervell, Steven Scheer, Yuhei Kuwahara, Kathleen Nafus, Roel Gronheid, Shinji Tarutani, Yuuichiro Enomoto

Proceedings Volume 7640, 76400E (2010) https://doi.org/10.1117/12.846575

KEYWORDS: Floods, Semiconducting wafers, Photoresist processing, Photomasks, Image processing, Double patterning technology, Manufacturing, Printing, Optical lithography, Scanning electron microscopy

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Proceedings Article | 1 April 2009 Paper

Paper

Polymer dissolution model: an energy adaptation of the critical ionization theory

Siddharth Chauhan, Mark Somervell, Steven Scheer, Chris Mack, Roger Bonnecaze, C. Grant Willson

Proceedings Volume 7273, 727336 (2009) https://doi.org/10.1117/12.814344

KEYWORDS: Polymers, Ionization, Monte Carlo methods, Line edge roughness, Polymer thin films, Interfaces, 3D modeling, Calibration, Molecular interactions, Motion models

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Proceedings Article | 16 March 2009 Paper

Paper

Advances and challenges in dual-tone development process optimization

Carlos Fonseca, Mark Somervell, Steven Scheer, Wallace Printz, Kathleen Nafus, Shinichi Hatakeyama, Yuhei Kuwahara, Takafumi Niwa, Sophie Bernard, Roel Gronheid

Proceedings Volume 7274, 72740I (2009) https://doi.org/10.1117/12.814289

KEYWORDS: Image processing, Photoresist processing, Double patterning technology, Photomasks, Optical lithography, Printing, Scanning electron microscopy, Scanners, Manufacturing, Lithography

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Proceedings Article | 26 March 2008 Paper

Paper

Fabrication of 32-nm contact/via hole by photolithographic-friendly method

Tetsu Kawasaki, Satoru Shimura, Fumiko Iwao, Eiichi Nishimura, Masato Kushibiki, Kazuhide Hasebe, Michael Carcasi, Mark Somervell, Steven Scheer, Hidetami Yaegashi

Proceedings Volume 6923, 692333 (2008) https://doi.org/10.1117/12.771907

KEYWORDS: Reactive ion etching, Chemical vapor deposition, Semiconductors, Lithography, Immersion lithography, Etching, 193nm lithography, Photoresist processing, Photoresist materials, Double patterning technology

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Proceedings Article | 21 March 2006 Paper

Paper

Minimization of sidelobes in rectangular contact/via hole structures

Mary Coles, Mark Somervell

Proceedings Volume 6154, 61543Z (2006) https://doi.org/10.1117/12.658784

KEYWORDS: Printing, Scanners, Photomasks, Semiconducting wafers, Reticles, Critical dimension metrology, Scanning electron microscopy, Phase shifts, Constructive interference, Monochromatic aberrations

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Proceedings Article | 1 August 2002 Paper

Paper

CD variations from nontrivial mask-related factors

Z. Mark Ma, Won Kim, Benjamen Rathsack, Guoqiang Xing, Mark Somervell, Hyesook Hong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476928

KEYWORDS: Photomasks, Critical dimension metrology, Pellicles, Semiconducting wafers, Reticles, Calibration, Etching, Photoresist processing, Process control, Metrology

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Proceedings Article | 24 August 2001 Paper

Paper

Top surface imaging at 157-nm

Andrew Jamieson, Mark Somervell, Hoang Tran, Raymond Hung, Scott MacDonald, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436872

KEYWORDS: Polymers, Etching, Absorbance, Line edge roughness, Opacity, Polymerization, Binary data, Silicon, Photomasks, Transparency

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Proceedings Article | 23 June 2000 Paper

Paper

Study of acid transport using IR spectroscopy and SEM

Michael Stewart, Mark Somervell, Hoang Tran, Sergei Postnikov, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388353

KEYWORDS: Diffusion, Scanning electron microscopy, Sensors, Polymers, Infrared spectroscopy, Glasses, Photoresist materials, Information operations, Temperature metrology, Silicon

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Proceedings Article | 23 June 2000 Paper

Paper

Polymers for 157-nm photoresist applications: a progress report

Kyle Patterson, Mikio Yamachika, Raymond Hung, Colin Brodsky, Shintaro Yamada, Mark Somervell, Brian Osborn, Daniel Hall, Gordana Dukovic, Jeff Byers, Will Conley, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388320

KEYWORDS: Photoresist materials, Polymers, Absorbance, Photoresist developing, Transparency, Deep ultraviolet, Etching, Vacuum ultraviolet, Resistance, Fluorine

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Proceedings Article | 23 June 2000 Paper

Paper

Using alicyclic polymers in top surface imaging systems to reduce line-edge roughness

Mark Somervell, David Fryer, Brian Osborn, Kyle Patterson, Sungseo Cho, Jeff Byers, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388311

KEYWORDS: Polymers, Line edge roughness, Glasses, Semiconducting wafers, Imaging systems, Etching, FT-IR spectroscopy, Photoresist materials, Image resolution, Absorbance

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Proceedings Article | 29 June 1998 Paper

Paper

Top surface imaging through silylation

Sergei Postnikov, Mark Somervell, Clifford Henderson, Steven Katz, C. Grant Willson, Jeff Byers, Anwei Qin, Qinghuang Lin

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312370

KEYWORDS: Etching, Lithography, Diffusion, Photoresist materials, Image processing, Semiconducting wafers, Photoresist processing, Oxygen, Absorbance, Silicon

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Proceedings Article | 1 August 1990 Paper

Paper

Extended velocity overshoot in InGaAs collectors for high-speed heterojunction bipolar transistors

Christine Maziar, Mark Somervell, Carl Kyono

Proceedings Volume 1288, (1990) https://doi.org/10.1117/12.20908

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Heterojunctions, Scattering, Transistors, High speed electronics, Monte Carlo methods, Electrons, Indium, Satellites

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Showing 5 of 42 publications

Proceedings Volume Editor (4)

SPIE Conference Volume | 18 April 2013

Advances in Resist Materials and Processing Technology XXX

SPIE Conference Volume | 27 April 2012

Advances in Resist Materials and Processing Technology XXIX

SPIE Conference Volume | 18 April 2011

Advances in Resist Materials and Processing Technology XXVIII

SPIE Conference Volume | 3 March 2010

Advances in Resist Materials and Processing Technology XXVII

Conference Committee Involvement (20)

Advances in Patterning Materials and Processes XLII

24 February 2025 | San Jose, California, United States

Advances in Patterning Materials and Processes XLI

26 February 2024 | San Jose, California, United States

Advances in Patterning Materials and Processes XL

27 February 2023 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXIX

25 April 2022 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXVIII

22 February 2021 | Online Only, California, United States

Advances in Patterning Materials and Processes XXXVII

24 February 2020 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXVI

25 February 2019 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXV

27 February 2018 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXIV

28 February 2017 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXIII

29 February 2016 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXII

24 February 2015 | San Jose, California, United States

Advances in Patterning Materials and Processes XXXI

24 February 2014 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXX

25 February 2013 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXIX

13 February 2012 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXVIII

28 February 2011 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXVII

22 February 2010 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXVI

23 February 2009 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXV

25 February 2008 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXIV

26 February 2007 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXIII

20 February 2006 | San Jose, California, United States

Showing 5 of 20 Conference Committees

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