Reliability of Czochralski-grown B-BaB2O4 (BBO) devices

Nobuhiko Umezu; Tatsuo Fukui; Tsutomu Okamoto; Hiroyuki Wada; Koichi Tatsuki; Kenji Kondo; Shigeo R. Kubota

doi:10.1117/12.306988

20 April 1998 Reliability of Czochralski-grown B-BaB2O4 (BBO) devices

Nobuhiko Umezu, Tatsuo Fukui, Tsutomu Okamoto, Hiroyuki Wada, Koichi Tatsuki, Kenji Kondo, Shigeo R. Kubota

Proceedings Volume 3244, Laser-Induced Damage in Optical Materials: 1997; (1998) https://doi.org/10.1117/12.306988
Event: Laser-Induced Damage in Optical Materials: 1997, 1997, Boulder, CO, United States

Abstract

We report the first operation of more than 1000 hours of continuous wave (CW) 100-mW output at 266 nm which was frequency-quadrupled from a Nd:YAG or a Nd:YVO₄ laser. We used a Czochralski (Cz)-grown (beta) -BaB₂O₄ (BBO) crystal device to double a 532-nm wave in an external ring cavity. The round trip cavity loss increasing rate was 7.6 X 10^-5 percent/hour at a 266-nm power density of 270 W/cm². The UV range optical transmission loss of the Cz-grown crystal was evaluated. The optical loss of the Cz-grown crystal for e-ray at 266 nm was improved to 2 percent/cm, which was half of the crystal grown by the top seeded solution growth (TSSG) method. The degradation rate, (delta) _p equals (dP_4w(t)/dt)/P_4w(0), was also evaluated in 30 MW/cm² of 266-nm generation from a Q-switched Nd:YAG laser. The (delta) _p of Cz-crystal was typically 0.1 percent/hour, which was one order of magnitude lower than that of the TSSG- crystals. The fabrication process was also improved. Our system with the crystal device can be put to practical use in the areas of photolithography, material processing and ultra high-density optical disk mastering.

Citation Download Citation

Nobuhiko Umezu, Tatsuo Fukui, Tsutomu Okamoto, Hiroyuki Wada, Koichi Tatsuki, Kenji Kondo, and Shigeo R. Kubota "Reliability of Czochralski-grown B-BaB2O4 (BBO) devices", Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); https://doi.org/10.1117/12.306988

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