Detectability and printability of programmed defect reticle for 256-Mb DRAM

Jin-Hong Park; Hanku Cho; Yonghoon Kim; Kyung Hee Lee; Hee-Sun Yoon

doi:10.1117/12.245223

24 July 1996 Detectability and printability of programmed defect reticle for 256-Mb DRAM

Jin-Hong Park, Hanku Cho, Yonghoon Kim, Kyung Hee Lee, Hee-Sun Yoon

Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245223
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan

Abstract

As field size is increased and design rule goes down to 0.25 μm more accurate control of defects on the reticle coming from the manufacturing process or the handling process is required than before. In this paper, test reticles which have background contact patterns with a wide variety of defect types, sizes, and locations have been investigated for 256M DRAM level. The geometry of the background contact pattern on the reticle has been designed for 0.30 μm more or less when printed on a wafer with a 4x reduction stepper. The programmed defects are used for the sensitivity evaluation of a defect inspection system, i.e., detectability. Also printability of these defects on the wafer is performed by using a 4x reduction DUV stepper to determine not only the reticle defect specification but also the detectability required for the defect inspection system. As a result, it has been shown that the depth-of-focus (DOF) and the defect specifications required for 256M DRAM level within the constraints of ±10% critical dimension control at fixed exposure dose can be determined. For comparison the impact on defect printability has been determined using 3D optical lithography simulation in the case of chrome extension and clear extension, respectively.

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Jin-Hong Park, Hanku Cho, Yonghoon Kim, Kyung Hee Lee, and Hee-Sun Yoon "Detectability and printability of programmed defect reticle for 256-Mb DRAM", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245223

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