Optimization of a 193-nm silylation process for sub-0.25-um lithography

Susan C. Palmateer; Roderick R. Kunz; Mark W. Horn; Anthony R. Forte; Mordechai Rothschild

doi:10.1117/12.210356

9 June 1995 Optimization of a 193-nm silylation process for sub-0.25-um lithography

Susan C. Palmateer, Roderick R. Kunz, Mark W. Horn, Anthony R. Forte, Mordechai Rothschild

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210356
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

We have optimized a positive-tone silylation process using polyvinylphenol resist and dimethylsilyldimethylamine as the silylating agent. Imaging quality and process latitude have been evaluated at 193 nm using a 0.5-NA SVGL prototype exposure system. A low- temperature dry etch process was developed that produces vertical resist profiles resulting in large exposure and defocus latitudes, linearity of gratings down to 0.175 micrometers , and resolution of 0.15-micrometers gratings and isolated lines.

Citation Download Citation

Susan C. Palmateer, Roderick R. Kunz, Mark W. Horn, Anthony R. Forte, and Mordechai Rothschild "Optimization of a 193-nm silylation process for sub-0.25-um lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210356

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available