Paper
3 November 1994 Printability of organic defects on an x-ray mask
Yasunao Saitoh, Ikuo Okada, Misao Sekimoto, Takashi Ohkubo, Tadahito Matsuda
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Abstract
Programmed organic defects are formed on an x-ray mask, and are printed onto the resist using the synchrotron radiation exposure system. The printed resist image of the mask defects depends on the exposure dose and on the defect's position within the pattern. An isolated defect outside the mask patterns is easily transferred to the resist image by the optimum dose for printing fine patterns. Otherwise, within high density patterns (such as line and space pattern), defects are not transferred to the resist image by the optimum dose, due to the increase in exposure intensity caused by x-ray diffraction from pattern edges. Furthermore, with a 10% over-dose, almost 1-micrometers -thick organic defects did not transfer as defects to the resist image. For 2-micrometers -thick defects, the printability depends mainly on the shape of defect edge: sharp-edged defects on the x-ray mask are easily printed even when using an exposure dose 30% over greater than the optimum dose.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunao Saitoh, Ikuo Okada, Misao Sekimoto, Takashi Ohkubo, and Tadahito Matsuda "Printability of organic defects on an x-ray mask", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191921
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KEYWORDS
X-rays

Photomasks

X-ray technology

X-ray lithography

Particles

X-ray diffraction

Printing

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