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30 April 2023 Mitigating stochastics in EUV lithography by directed self-assembly
L. Verstraete, Hyo Seon Suh, Julie Van Bel, Purnota Hannan Timi, Remi Vallat, Philippe Bezard, Jelle Vandereyken, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Waikin Li, Mihir Gupta, Roberto Fallica
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Proceedings Volume 12497, Novel Patterning Technologies 2023; 124970I (2023) https://doi.org/10.1117/12.2657939
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States
Abstract
Owing to photon shot noise and inhomogeneous distribution of the molecular components in a chemically amplified resist, resist patterns defined by extreme ultraviolet (EUV) lithography tend to suffer from stochastic variations. These stochastic variations are becoming more severe as critical dimensions continue to scale down, and can thus be expected to be a major challenge for the future use of single exposure EUV lithography. Complementing EUV lithography with directed self-assembly (DSA) of block-copolymers provides an interesting opportunity to mitigate the variability related to EUV stochastics. In this work, the DSA rectification process at imec is described for both line/space (L/S) and hexagonal contact hole (HEXCH) patterns. The benefits that rectification can bring, as well as the challenges for further improvement are being addressed based on the current status of imec’s rectification process.
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L. Verstraete, Hyo Seon Suh, Julie Van Bel, Purnota Hannan Timi, Remi Vallat, Philippe Bezard, Jelle Vandereyken, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Waikin Li, Mihir Gupta, and Roberto Fallica "Mitigating stochastics in EUV lithography by directed self-assembly", Proc. SPIE 12497, Novel Patterning Technologies 2023, 124970I (30 April 2023); https://doi.org/10.1117/12.2657939
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KEYWORDS
Block copolymers
Extreme ultraviolet
Directed self assembly
Extreme ultraviolet lithography
Bridges
Etching
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